本技術(shu)涉及太陽(yang)能電池(chi)，尤其涉及一種(zhong)背接(jie)觸電池(chi)及其制(zhi)備方法、光伏組件。

背景技術：

1、背(bei)(bei)接(jie)觸電(dian)(dian)池(chi)是指電(dian)(dian)池(chi)片的(de)(de)向光(guang)面無電(dian)(dian)極(ji)，正、負電(dian)(dian)極(ji)均設置在(zai)電(dian)(dian)池(chi)片背(bei)(bei)光(guang)面一側的(de)(de)太陽能電(dian)(dian)池(chi)，從而可(ke)以減(jian)少(shao)電(dian)(dian)極(ji)對電(dian)(dian)池(chi)片的(de)(de)遮擋，增加電(dian)(dian)池(chi)片的(de)(de)短路電(dian)(dian)流(liu)，提高電(dian)(dian)池(chi)片的(de)(de)能量轉(zhuan)化效(xiao)率。

2、背(bei)接觸電(dian)池(chi)在(zai)實際(ji)使(shi)用過程中，可能有鳥糞、樹葉、沙塵等遮擋(dang)物(wu)落到背(bei)接觸電(dian)池(chi)上(shang)，電(dian)池(chi)片被遮擋(dang)物(wu)后溫(wen)度會升高產生熱斑(ban)效應。若熱斑(ban)產生的溫(wen)度超過了一定的溫(wen)度值，將會導(dao)(dao)致光伏組件脫層(ceng)、背(bei)板灼燒、玻璃(li)爆裂等問題，從而導(dao)(dao)致整(zheng)個太(tai)陽能電(dian)池(chi)的報廢，嚴重時可能引發火災風險。

技術實現思路

1、本技(ji)術的目(mu)的在于提供一種背接(jie)觸電池(chi)及其制備(bei)方法、光伏(fu)組件(jian)，解決了現(xian)有背接(jie)觸電池(chi)發熱(re)嚴重導致(zhi)的熱(re)斑問題(ti)。

2、為了實現上述目的，本技術提(ti)供如下技術方案：

3、一(yi)(yi)(yi)(yi)(yi)(yi)種背接觸電池，包括：半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)基(ji)底(di)，半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)基(ji)底(di)具有相對(dui)的(de)(de)(de)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)表面(mian)和(he)第(di)(di)(di)二(er)(er)(er)表面(mian)；第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)，第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)設于第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)表面(mian)；第(di)(di)(di)二(er)(er)(er)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)，第(di)(di)(di)二(er)(er)(er)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)設于第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)表面(mian)，且(qie)(qie)與(yu)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)的(de)(de)(de)導(dao)(dao)(dao)(dao)(dao)(dao)電類(lei)型(xing)相反；透(tou)明(ming)導(dao)(dao)(dao)(dao)(dao)(dao)電層(ceng)(ceng)(ceng)(ceng)，至少設置于第(di)(di)(di)二(er)(er)(er)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)遠(yuan)離半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)基(ji)底(di)的(de)(de)(de)一(yi)(yi)(yi)(yi)(yi)(yi)側；位(wei)于第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)和(he)第(di)(di)(di)二(er)(er)(er)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)之間(jian)(jian)，間(jian)(jian)隔(ge)(ge)(ge)(ge)設置的(de)(de)(de)漏電通道和(he)隔(ge)(ge)(ge)(ge)離部(bu)(bu)；漏電通道的(de)(de)(de)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)端與(yu)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)連(lian)接，第(di)(di)(di)二(er)(er)(er)端被(bei)(bei)第(di)(di)(di)二(er)(er)(er)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)和(he)透(tou)明(ming)導(dao)(dao)(dao)(dao)(dao)(dao)電層(ceng)(ceng)(ceng)(ceng)覆蓋；其中，隔(ge)(ge)(ge)(ge)離部(bu)(bu)的(de)(de)(de)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)端與(yu)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)連(lian)接，第(di)(di)(di)二(er)(er)(er)端被(bei)(bei)第(di)(di)(di)二(er)(er)(er)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)和(he)透(tou)明(ming)導(dao)(dao)(dao)(dao)(dao)(dao)電層(ceng)(ceng)(ceng)(ceng)覆蓋，漏電通道的(de)(de)(de)摻(chan)雜濃度大于隔(ge)(ge)(ge)(ge)離部(bu)(bu)的(de)(de)(de)摻(chan)雜濃度；或(huo)者，隔(ge)(ge)(ge)(ge)離部(bu)(bu)的(de)(de)(de)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)端與(yu)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)(yi)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)連(lian)接，第(di)(di)(di)二(er)(er)(er)端與(yu)第(di)(di)(di)二(er)(er)(er)半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)層(ceng)(ceng)(ceng)(ceng)連(lian)接，隔(ge)(ge)(ge)(ge)離部(bu)(bu)的(de)(de)(de)材料(liao)為絕緣(yuan)材料(liao)，或(huo)隔(ge)(ge)(ge)(ge)離部(bu)(bu)的(de)(de)(de)材料(liao)為半(ban)(ban)(ban)(ban)導(dao)(dao)(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)(ti)(ti)材料(liao)且(qie)(qie)隔(ge)(ge)(ge)(ge)離部(bu)(bu)的(de)(de)(de)第(di)(di)(di)二(er)(er)(er)端未被(bei)(bei)透(tou)明(ming)導(dao)(dao)(dao)(dao)(dao)(dao)電層(ceng)(ceng)(ceng)(ceng)覆蓋。

4、采(cai)用上述(shu)技術方案的(de)(de)情(qing)況(kuang)下，導(dao)電(dian)(dian)(dian)(dian)(dian)(dian)類(lei)型相反的(de)(de)第(di)(di)(di)(di)(di)一(yi)半(ban)導(dao)體(ti)(ti)層(ceng)(ceng)(ceng)(ceng)和(he)(he)第(di)(di)(di)(di)(di)二(er)半(ban)導(dao)體(ti)(ti)層(ceng)(ceng)(ceng)(ceng)分布在半(ban)導(dao)體(ti)(ti)基(ji)底(di)的(de)(de)背(bei)光(guang)面(mian)一(yi)側，以在背(bei)接(jie)觸(chu)(chu)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)處于(yu)工(gong)作狀(zhuang)態下有效分流(liu)載流(liu)子，利于(yu)形成光(guang)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)。本發明實施(shi)例提(ti)供的(de)(de)背(bei)接(jie)觸(chu)(chu)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)還(huan)包括位于(yu)第(di)(di)(di)(di)(di)一(yi)半(ban)導(dao)體(ti)(ti)層(ceng)(ceng)(ceng)(ceng)和(he)(he)第(di)(di)(di)(di)(di)二(er)半(ban)導(dao)體(ti)(ti)層(ceng)(ceng)(ceng)(ceng)之間(jian)的(de)(de)漏(lou)(lou)電(dian)(dian)(dian)(dian)(dian)(dian)通(tong)(tong)道(dao)。基(ji)于(yu)此，因每個漏(lou)(lou)電(dian)(dian)(dian)(dian)(dian)(dian)通(tong)(tong)道(dao)具有導(dao)電(dian)(dian)(dian)(dian)(dian)(dian)特(te)性，故在漏(lou)(lou)電(dian)(dian)(dian)(dian)(dian)(dian)通(tong)(tong)道(dao)的(de)(de)第(di)(di)(di)(di)(di)一(yi)端與第(di)(di)(di)(di)(di)一(yi)半(ban)導(dao)體(ti)(ti)層(ceng)(ceng)(ceng)(ceng)連接(jie)，漏(lou)(lou)電(dian)(dian)(dian)(dian)(dian)(dian)通(tong)(tong)道(dao)的(de)(de)第(di)(di)(di)(di)(di)二(er)端被(bei)第(di)(di)(di)(di)(di)二(er)半(ban)導(dao)體(ti)(ti)層(ceng)(ceng)(ceng)(ceng)和(he)(he)透明導(dao)電(dian)(dian)(dian)(dian)(dian)(dian)層(ceng)(ceng)(ceng)(ceng)覆蓋(gai)的(de)(de)情(qing)況(kuang)下，使(shi)得(de)背(bei)接(jie)觸(chu)(chu)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)被(bei)遮擋時，且被(bei)遮擋的(de)(de)背(bei)接(jie)觸(chu)(chu)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)被(bei)提(ti)供的(de)(de)一(yi)定的(de)(de)反向電(dian)(dian)(dian)(dian)(dian)(dian)壓時，電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)可以經第(di)(di)(di)(di)(di)一(yi)半(ban)導(dao)體(ti)(ti)層(ceng)(ceng)(ceng)(ceng)、漏(lou)(lou)電(dian)(dian)(dian)(dian)(dian)(dian)通(tong)(tong)道(dao)以及第(di)(di)(di)(di)(di)二(er)半(ban)導(dao)體(ti)(ti)層(ceng)(ceng)(ceng)(ceng)和(he)(he)透明導(dao)電(dian)(dian)(dian)(dian)(dian)(dian)層(ceng)(ceng)(ceng)(ceng)進行傳輸，避免了被(bei)遮擋的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)成為負載消耗其他有光(guang)照(zhao)的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)片所產(chan)生的(de)(de)能(neng)量，進而降低了熱斑風險。

5、作(zuo)為一種可(ke)能得實現(xian)方式，隔離部的第一端(duan)與第一半(ban)導(dao)體層(ceng)連(lian)接，第二端(duan)被第二半(ban)導(dao)體層(ceng)和透明導(dao)電層(ceng)覆(fu)蓋，漏電通(tong)道的摻雜濃度大于隔離部的摻雜濃度；隔離部為本征半(ban)導(dao)體層(ceng)。

6、當隔離(li)(li)部為(wei)本(ben)征半(ban)導(dao)體層時，在(zai)制(zhi)(zhi)作(zuo)第一(yi)半(ban)導(dao)體層和隔離(li)(li)部時均可(ke)以(yi)先形成(cheng)本(ben)征半(ban)導(dao)體層，再對本(ben)征半(ban)導(dao)體層進(jin)行摻雜(za)形成(cheng)，簡化了背(bei)接觸(chu)電(dian)(dian)池的(de)(de)制(zhi)(zhi)造流程(cheng)，提(ti)高背(bei)接觸(chu)電(dian)(dian)池的(de)(de)制(zhi)(zhi)造效率(lv)。此外，利用(yong)本(ben)征半(ban)導(dao)體層作(zuo)為(wei)隔離(li)(li)部可(ke)以(yi)避免第一(yi)半(ban)導(dao)體層和第二半(ban)導(dao)體層接觸(chu)產生復(fu)合。

7、作為一種可能得(de)實現方式，漏(lou)電通道(dao)的(de)摻雜濃(nong)度大于第一半導體層的(de)摻雜濃(nong)度，如此設(she)置，漏(lou)電通道(dao)的(de)導電性更(geng)好，背接觸電池被(bei)遮擋時，漏(lou)電流(liu)更(geng)容(rong)易從漏(lou)電通道(dao)傳輸(shu)，需要的(de)反向電壓更(geng)小，更(geng)不容(rong)易產生熱(re)斑；

8、或者，漏電通(tong)道的(de)(de)摻(chan)(chan)雜濃度等于第一半(ban)導體層(ceng)的(de)(de)摻(chan)(chan)雜濃度，在此情(qing)況下，第一半(ban)導體層(ceng)和(he)漏電通(tong)道可以(yi)同(tong)時(shi)形成，簡化背接觸電池的(de)(de)制造(zao)(zao)流程，提高背接觸電池的(de)(de)制造(zao)(zao)效率。

9、作為一(yi)種可(ke)能得實現方式，第一(yi)半(ban)導(dao)(dao)(dao)體(ti)層的摻雜濃度大(da)于隔(ge)離部的摻雜濃度。隔(ge)離部的摻雜濃度較(jiao)小(xiao)，可(ke)以較(jiao)好的隔(ge)離第一(yi)半(ban)導(dao)(dao)(dao)體(ti)層和第二半(ban)導(dao)(dao)(dao)體(ti)層，以防止第一(yi)半(ban)導(dao)(dao)(dao)體(ti)層和第二半(ban)導(dao)(dao)(dao)體(ti)層在(zai)隔(ge)離部的位置處漏電(dian)流較(jiao)大(da)，保(bao)證了導(dao)(dao)(dao)致背接觸電(dian)池的光電(dian)轉換效率。

10、作為一種可(ke)能得(de)實(shi)現方式(shi)，漏電(dian)(dian)(dian)(dian)(dian)通(tong)(tong)道的摻雜濃度(du)(du)大(da)于(yu)(yu)等于(yu)(yu)8e19?cm-3，且小于(yu)(yu)等于(yu)(yu)5e20cm-3。在(zai)此情況(kuang)下(xia)，漏電(dian)(dian)(dian)(dian)(dian)通(tong)(tong)道內(nei)雜質的摻雜濃度(du)(du)在(zai)上述范圍，可(ke)以(yi)防止因漏電(dian)(dian)(dian)(dian)(dian)通(tong)(tong)道內(nei)雜質的摻雜濃度(du)(du)較(jiao)(jiao)低而導(dao)致(zhi)導(dao)電(dian)(dian)(dian)(dian)(dian)性較(jiao)(jiao)弱，背(bei)接(jie)(jie)觸(chu)電(dian)(dian)(dian)(dian)(dian)池(chi)在(zai)被遮(zhe)擋時漏電(dian)(dian)(dian)(dian)(dian)流(liu)傳(chuan)輸效率(lv)較(jiao)(jiao)低，不能有效降低熱斑風險(xian)。另外(wai)，還可(ke)以(yi)防止因漏電(dian)(dian)(dian)(dian)(dian)通(tong)(tong)道內(nei)雜質的摻雜濃度(du)(du)較(jiao)(jiao)高而導(dao)致(zhi)對用于(yu)(yu)制造漏電(dian)(dian)(dian)(dian)(dian)通(tong)(tong)道的本征半導(dao)體層進行(xing)摻雜處理(li)的難(nan)度(du)(du)較(jiao)(jiao)高，利(li)于(yu)(yu)提(ti)高背(bei)接(jie)(jie)觸(chu)電(dian)(dian)(dian)(dian)(dian)池(chi)的良率(lv)。

11、作(zuo)為(wei)一(yi)(yi)種(zhong)可能得實(shi)(shi)現方式，漏(lou)電(dian)(dian)(dian)(dian)通(tong)(tong)道(dao)在第(di)一(yi)(yi)表(biao)面(mian)(mian)(mian)上(shang)(shang)的(de)(de)正(zheng)投(tou)(tou)(tou)影面(mian)(mian)(mian)積(ji)與隔離部(bu)在第(di)一(yi)(yi)表(biao)面(mian)(mian)(mian)上(shang)(shang)的(de)(de)正(zheng)投(tou)(tou)(tou)影面(mian)(mian)(mian)積(ji)之比為(wei)0.05～1。在此(ci)情況下，可以防止因漏(lou)電(dian)(dian)(dian)(dian)通(tong)(tong)道(dao)在第(di)一(yi)(yi)表(biao)面(mian)(mian)(mian)一(yi)(yi)側(ce)的(de)(de)正(zheng)投(tou)(tou)(tou)影面(mian)(mian)(mian)積(ji)較小(xiao)而(er)導(dao)致(zhi)通(tong)(tong)過漏(lou)電(dian)(dian)(dian)(dian)通(tong)(tong)道(dao)的(de)(de)漏(lou)電(dian)(dian)(dian)(dian)流較小(xiao)，防止背接觸(chu)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)因局部(bu)熱量集中而(er)燒毀(hui)，有(you)效降低包括(kuo)本發明實(shi)(shi)施例提(ti)供(gong)的(de)(de)背接觸(chu)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)光伏組件的(de)(de)熱斑(ban)風險。還可以防止因漏(lou)電(dian)(dian)(dian)(dian)通(tong)(tong)道(dao)在第(di)一(yi)(yi)表(biao)面(mian)(mian)(mian)一(yi)(yi)側(ce)的(de)(de)正(zheng)投(tou)(tou)(tou)影面(mian)(mian)(mian)積(ji)較大(da)而(er)導(dao)致(zhi)背接觸(chu)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)處于正(zheng)常工作(zuo)情況下的(de)(de)漏(lou)電(dian)(dian)(dian)(dian)流較大(da)，進一(yi)(yi)步確保包括(kuo)本發明實(shi)(shi)施例提(ti)供(gong)的(de)(de)背接觸(chu)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)光伏組件在正(zheng)向電(dian)(dian)(dian)(dian)壓區域具有(you)較高的(de)(de)光電(dian)(dian)(dian)(dian)轉換效率。

12、作為一(yi)種可能(neng)得實現(xian)方式，沿漏電(dian)(dian)通(tong)道和(he)隔(ge)離部(bu)間隔(ge)設(she)置的(de)方向，多個漏電(dian)(dian)通(tong)道均(jun)勻分布。如(ru)此(ci)設(she)置，當背(bei)接觸(chu)電(dian)(dian)池(chi)局部(bu)被遮擋時，電(dian)(dian)流可以(yi)經多個漏電(dian)(dian)通(tong)道更加均(jun)勻的(de)傳輸，防止半導(dao)體基底的(de)第一(yi)表(biao)面局部(bu)電(dian)(dian)流集中(zhong)，發熱嚴重(zhong)，導(dao)致背(bei)板灼燒(shao)、玻(bo)璃爆(bao)裂等問題(ti)。

13、作為(wei)一種可能得實現方式，沿漏電(dian)通道的第一端至第二端的方向，漏電(dian)通道的寬度(du)為(wei)50μm～300μm；和(he)/或，

14、沿漏(lou)電通(tong)道和(he)隔離部間隔設置(zhi)的方向，漏(lou)電通(tong)道的長度為20μm～1000μm；和(he)/或，

15、沿隔(ge)離(li)部的(de)第(di)一端至第(di)二端的(de)方向，隔(ge)離(li)部的(de)寬(kuan)度(du)為50μm～300μm；和/或，

16、沿漏電通道和(he)隔離(li)部間隔設置的(de)(de)方(fang)向，隔離(li)部的(de)(de)長度(du)為50μm～5000μm；

17、和/或，沿漏電(dian)通(tong)道和隔離部間隔設置的(de)方向，隔離部的(de)長度(du)大(da)于漏電(dian)通(tong)道的(de)長度(du)。

18、作為(wei)一種(zhong)可能得實(shi)現方式，沿漏(lou)(lou)電(dian)通道和隔(ge)離部(bu)(bu)間隔(ge)設(she)置的方向，每1cm長度內漏(lou)(lou)電(dian)通道的數量為(wei)1～200個(ge)。在此情況下，每單位長度內均設(she)置至少1個(ge)漏(lou)(lou)電(dian)通道，利于多(duo)個(ge)漏(lou)(lou)電(dian)通道在隔(ge)離區內分散設(she)置，防止(zhi)半導體基底的第(di)一表面局部(bu)(bu)漏(lou)(lou)電(dian)流集中，發熱嚴(yan)重，導致背板灼燒、玻璃爆裂等問題。

19、作為一種可能(neng)得(de)實現(xian)方式(shi)，沿漏電通道的第(di)(di)二端至第(di)(di)一端的方向，第(di)(di)二半導(dao)(dao)體層和(he)透明導(dao)(dao)電層延伸覆(fu)蓋漏電通道的第(di)(di)二端的距離為10μm～150μm。既能(neng)夠有效(xiao)的隔離第(di)(di)一半導(dao)(dao)體層和(he)第(di)(di)二半導(dao)(dao)體層，確保背接(jie)觸電池的工作效(xiao)率，還(huan)可以有效(xiao)降低熱斑風(feng)險(xian)。

20、作為一(yi)(yi)種可(ke)能(neng)得實(shi)現方式，沿(yan)漏(lou)(lou)電(dian)(dian)(dian)(dian)通(tong)道(dao)(dao)的第(di)(di)(di)(di)二(er)(er)端(duan)至(zhi)第(di)(di)(di)(di)一(yi)(yi)端(duan)的方向，第(di)(di)(di)(di)二(er)(er)半導(dao)(dao)(dao)(dao)體層和透(tou)明導(dao)(dao)(dao)(dao)電(dian)(dian)(dian)(dian)層延伸覆蓋漏(lou)(lou)電(dian)(dian)(dian)(dian)通(tong)道(dao)(dao)的第(di)(di)(di)(di)二(er)(er)端(duan)的距離(li)與漏(lou)(lou)電(dian)(dian)(dian)(dian)通(tong)道(dao)(dao)的寬度之比為0.03～0.5。以(yi)保(bao)證背接(jie)觸(chu)電(dian)(dian)(dian)(dian)池被(bei)遮擋時(shi)，電(dian)(dian)(dian)(dian)流(liu)能(neng)夠(gou)經漏(lou)(lou)電(dian)(dian)(dian)(dian)通(tong)道(dao)(dao)正(zheng)常傳輸，同時(shi)防(fang)止第(di)(di)(di)(di)二(er)(er)半導(dao)(dao)(dao)(dao)體層和透(tou)明導(dao)(dao)(dao)(dao)電(dian)(dian)(dian)(dian)層距第(di)(di)(di)(di)一(yi)(yi)半導(dao)(dao)(dao)(dao)體層的距離(li)太近，導(dao)(dao)(dao)(dao)致背接(jie)觸(chu)電(dian)(dian)(dian)(dian)池正(zheng)常工(gong)作狀態下，第(di)(di)(di)(di)二(er)(er)半導(dao)(dao)(dao)(dao)體層和透(tou)明導(dao)(dao)(dao)(dao)電(dian)(dian)(dian)(dian)層與第(di)(di)(di)(di)一(yi)(yi)半導(dao)(dao)(dao)(dao)體層漏(lou)(lou)電(dian)(dian)(dian)(dian)嚴重。

21、作(zuo)為一(yi)種可(ke)能(neng)得(de)實現方(fang)式，隔離(li)(li)部的(de)(de)(de)(de)第(di)(di)(di)(di)一(yi)端(duan)與(yu)第(di)(di)(di)(di)一(yi)半(ban)導體(ti)(ti)層(ceng)(ceng)接觸(chu)，第(di)(di)(di)(di)二(er)端(duan)被第(di)(di)(di)(di)二(er)半(ban)導體(ti)(ti)層(ceng)(ceng)和(he)(he)(he)透(tou)(tou)明(ming)(ming)導電(dian)(dian)(dian)層(ceng)(ceng)覆蓋，漏(lou)電(dian)(dian)(dian)通(tong)道(dao)的(de)(de)(de)(de)摻雜濃(nong)度(du)大于隔離(li)(li)部的(de)(de)(de)(de)摻雜濃(nong)度(du)；沿漏(lou)電(dian)(dian)(dian)通(tong)道(dao)的(de)(de)(de)(de)第(di)(di)(di)(di)二(er)端(duan)至第(di)(di)(di)(di)一(yi)端(duan)的(de)(de)(de)(de)方(fang)向，第(di)(di)(di)(di)二(er)半(ban)導體(ti)(ti)層(ceng)(ceng)和(he)(he)(he)透(tou)(tou)明(ming)(ming)導電(dian)(dian)(dian)層(ceng)(ceng)延(yan)伸覆蓋漏(lou)電(dian)(dian)(dian)通(tong)道(dao)的(de)(de)(de)(de)第(di)(di)(di)(di)二(er)端(duan)的(de)(de)(de)(de)距離(li)(li)與(yu)第(di)(di)(di)(di)二(er)半(ban)導體(ti)(ti)層(ceng)(ceng)和(he)(he)(he)透(tou)(tou)明(ming)(ming)導電(dian)(dian)(dian)層(ceng)(ceng)延(yan)伸覆蓋隔離(li)(li)部的(de)(de)(de)(de)第(di)(di)(di)(di)二(er)端(duan)的(de)(de)(de)(de)距離(li)(li)之差的(de)(de)(de)(de)絕對(dui)值(zhi)小于等(deng)于5μm。如此設(she)置，第(di)(di)(di)(di)二(er)半(ban)導體(ti)(ti)層(ceng)(ceng)和(he)(he)(he)透(tou)(tou)明(ming)(ming)導電(dian)(dian)(dian)層(ceng)(ceng)延(yan)伸至隔離(li)(li)區的(de)(de)(de)(de)邊(bian)緣(yuan)基本(ben)平(ping)齊(qi)，在加工制造過程中，這樣(yang)可(ke)以(yi)簡化第(di)(di)(di)(di)二(er)半(ban)導體(ti)(ti)層(ceng)(ceng)和(he)(he)(he)透(tou)(tou)明(ming)(ming)導電(dian)(dian)(dian)層(ceng)(ceng)的(de)(de)(de)(de)制作(zuo)工序，例如采(cai)用激光選擇(ze)性刻蝕(shi)(shi)第(di)(di)(di)(di)二(er)半(ban)導體(ti)(ti)層(ceng)(ceng)和(he)(he)(he)透(tou)(tou)明(ming)(ming)導電(dian)(dian)(dian)層(ceng)(ceng)的(de)(de)(de)(de)邊(bian)緣(yuan)時，可(ke)以(yi)簡化激光刻蝕(shi)(shi)路徑，提高(gao)加工效(xiao)率。

22、作為一(yi)種可能(neng)得(de)實現(xian)方(fang)式，第一(yi)半導(dao)體層為摻(chan)雜(za)多晶(jing)硅(gui)；第二半導(dao)體層為摻(chan)雜(za)非晶(jing)硅(gui)、摻(chan)雜(za)微(wei)晶(jing)硅(gui)、摻(chan)雜(za)納米晶(jing)硅(gui)中的一(yi)種或多種。

23、作為一種可能得實現方(fang)(fang)式(shi)，第(di)(di)(di)一半(ban)導體層包括多個(ge)沿(yan)第(di)(di)(di)一方(fang)(fang)向(xiang)(xiang)(xiang)(xiang)延(yan)伸的(de)(de)第(di)(di)(di)一叉(cha)指部(bu)，第(di)(di)(di)二(er)半(ban)導體層包括多個(ge)沿(yan)第(di)(di)(di)一方(fang)(fang)向(xiang)(xiang)(xiang)(xiang)延(yan)伸的(de)(de)第(di)(di)(di)二(er)叉(cha)指部(bu)；第(di)(di)(di)一叉(cha)指部(bu)和(he)第(di)(di)(di)二(er)叉(cha)指部(bu)沿(yan)第(di)(di)(di)二(er)方(fang)(fang)向(xiang)(xiang)(xiang)(xiang)交(jiao)(jiao)替(ti)排(pai)列；其中，第(di)(di)(di)一方(fang)(fang)向(xiang)(xiang)(xiang)(xiang)和(he)第(di)(di)(di)二(er)方(fang)(fang)向(xiang)(xiang)(xiang)(xiang)相交(jiao)(jiao)；

24、漏電(dian)(dian)通(tong)道設置(zhi)于(yu)第(di)(di)(di)一(yi)(yi)叉(cha)指(zhi)(zhi)部(bu)(bu)和第(di)(di)(di)二(er)(er)叉(cha)指(zhi)(zhi)部(bu)(bu)之(zhi)間(jian)(jian)(jian)。對于(yu)無主柵的一(yi)(yi)種背接(jie)觸(chu)電(dian)(dian)池，僅設置(zhi)第(di)(di)(di)一(yi)(yi)叉(cha)指(zhi)(zhi)部(bu)(bu)和第(di)(di)(di)二(er)(er)叉(cha)指(zhi)(zhi)部(bu)(bu)，并不(bu)設置(zhi)第(di)(di)(di)一(yi)(yi)連(lian)(lian)接(jie)部(bu)(bu)和第(di)(di)(di)二(er)(er)連(lian)(lian)接(jie)部(bu)(bu)，第(di)(di)(di)一(yi)(yi)叉(cha)指(zhi)(zhi)部(bu)(bu)可以沿(yan)第(di)(di)(di)一(yi)(yi)方向(xiang)(xiang)連(lian)(lian)續不(bu)間(jian)(jian)(jian)斷(duan)設置(zhi)也可以間(jian)(jian)(jian)斷(duan)形(xing)成(cheng)多段(duan)，第(di)(di)(di)二(er)(er)叉(cha)指(zhi)(zhi)部(bu)(bu)可以沿(yan)第(di)(di)(di)一(yi)(yi)方向(xiang)(xiang)連(lian)(lian)續不(bu)間(jian)(jian)(jian)斷(duan)設置(zhi)也可以間(jian)(jian)(jian)斷(duan)形(xing)成(cheng)多段(duan)，漏電(dian)(dian)通(tong)道只能設置(zhi)于(yu)第(di)(di)(di)一(yi)(yi)叉(cha)指(zhi)(zhi)部(bu)(bu)和第(di)(di)(di)二(er)(er)叉(cha)指(zhi)(zhi)部(bu)(bu)之(zhi)間(jian)(jian)(jian)。

25、作為一(yi)(yi)(yi)種可(ke)能得實現方式，第(di)(di)(di)一(yi)(yi)(yi)半導體層(ceng)包括多個沿第(di)(di)(di)一(yi)(yi)(yi)方向延伸(shen)的第(di)(di)(di)一(yi)(yi)(yi)叉指(zhi)部(bu)(bu)，第(di)(di)(di)二(er)半導體層(ceng)包括多個沿第(di)(di)(di)一(yi)(yi)(yi)方向延伸(shen)的第(di)(di)(di)二(er)叉指(zhi)部(bu)(bu)；第(di)(di)(di)一(yi)(yi)(yi)叉指(zhi)部(bu)(bu)和(he)第(di)(di)(di)二(er)叉指(zhi)部(bu)(bu)沿第(di)(di)(di)二(er)方向交(jiao)替排列；其(qi)中，第(di)(di)(di)一(yi)(yi)(yi)方向和(he)第(di)(di)(di)二(er)方向相(xiang)交(jiao)；

26、第(di)(di)一(yi)(yi)半(ban)導(dao)體(ti)層還包(bao)括(kuo)沿(yan)第(di)(di)二(er)方向(xiang)延伸(shen)的(de)第(di)(di)一(yi)(yi)連(lian)(lian)接(jie)部，第(di)(di)一(yi)(yi)連(lian)(lian)接(jie)部與多個第(di)(di)一(yi)(yi)叉(cha)指部連(lian)(lian)接(jie)，和(he)/或，第(di)(di)二(er)半(ban)導(dao)體(ti)層還包(bao)括(kuo)沿(yan)第(di)(di)二(er)方向(xiang)延伸(shen)的(de)第(di)(di)二(er)連(lian)(lian)接(jie)部，第(di)(di)二(er)連(lian)(lian)接(jie)部與多個第(di)(di)二(er)叉(cha)指部連(lian)(lian)接(jie)；

27、漏電通道設于第(di)(di)一(yi)叉(cha)(cha)指(zhi)部(bu)和(he)(he)(he)第(di)(di)二(er)叉(cha)(cha)指(zhi)部(bu)之(zhi)(zhi)間(jian)、第(di)(di)一(yi)連接(jie)部(bu)和(he)(he)(he)第(di)(di)二(er)叉(cha)(cha)指(zhi)部(bu)之(zhi)(zhi)間(jian)、第(di)(di)二(er)連接(jie)部(bu)和(he)(he)(he)第(di)(di)一(yi)叉(cha)(cha)指(zhi)部(bu)之(zhi)(zhi)間(jian)中(zhong)的(de)至少(shao)一(yi)個。

28、作為一(yi)種(zhong)可能得實現方式，半導(dao)體(ti)基底的第一(yi)表面(mian)至(zhi)少位于(yu)第二半導(dao)體(ti)層(ceng)的區域設置有紋(wen)理結構。

29、作為一種(zhong)可能(neng)得實現方式，絕(jue)緣材料包括氮化(hua)硅、氧化(hua)鋁、氧化(hua)硅、氮氧化(hua)硅中的一種(zhong)或多種(zhong)。上述各種(zhong)材料不但(dan)絕(jue)緣還(huan)具(ju)有(you)鈍化(hua)功能(neng)，這樣可以進一步降低載(zai)流子復合(he)速率，利于提高背接觸電池的光電轉換效(xiao)率。

30、一種(zhong)光伏組件，如上述(shu)(shu)中任一項的(de)背接(jie)觸(chu)電(dian)池。與現有技術相比，該光伏組件的(de)有益效果與上述(shu)(shu)背接(jie)觸(chu)電(dian)池的(de)有益效果相同，在此不做贅述(shu)(shu)。

31、一(yi)種背接觸電池的(de)制備(bei)方法(fa)，包括(kuo)：

32、提供半(ban)導體(ti)基底，半(ban)導體(ti)基底具有(you)相對的第(di)一(yi)(yi)表面(mian)和第(di)二(er)表面(mian)，第(di)一(yi)(yi)表面(mian)具有(you)第(di)一(yi)(yi)區(qu)域(yu)(yu)、第(di)二(er)區(qu)域(yu)(yu)以(yi)及位于第(di)一(yi)(yi)區(qu)域(yu)(yu)和第(di)二(er)區(qu)域(yu)(yu)之間的隔離(li)區(qu)；

33、在半導體基底的(de)第(di)(di)一表面的(de)第(di)(di)一區(qu)域形成第(di)(di)一半導體層，在隔離區(qu)形成漏電通道和隔離部；

34、在(zai)半導(dao)體(ti)基底的第(di)(di)一表(biao)面的第(di)(di)二(er)區域上形(xing)成第(di)(di)二(er)半導(dao)體(ti)層(ceng)，第(di)(di)二(er)半導(dao)體(ti)層(ceng)與第(di)(di)一半導(dao)體(ti)層(ceng)的導(dao)電類型相反；

35、至少在第二半導體層遠離半導體基底的一側(ce)形成透明導電層；

36、漏(lou)電(dian)通(tong)道(dao)和(he)隔(ge)(ge)離部間(jian)隔(ge)(ge)形成于第一半導體(ti)層(ceng)(ceng)和(he)第二半導體(ti)層(ceng)(ceng)之間(jian)；漏(lou)電(dian)通(tong)道(dao)的第一端(duan)與第一半導體(ti)層(ceng)(ceng)連接，第二端(duan)被第二半導體(ti)層(ceng)(ceng)和(he)透明導電(dian)層(ceng)(ceng)覆蓋；

37、其(qi)中，隔離(li)部的第(di)一(yi)(yi)端與第(di)一(yi)(yi)半導體層連接，第(di)二(er)端被第(di)二(er)半導體層和透明導電層覆(fu)蓋，漏電通道的摻雜(za)濃度大于隔離(li)部的摻雜(za)濃度；

38、或者(zhe)，隔(ge)離部(bu)的第一端(duan)(duan)與(yu)第一半(ban)導(dao)體層連接，第二(er)(er)端(duan)(duan)與(yu)第二(er)(er)半(ban)導(dao)體層連接，隔(ge)離部(bu)的材(cai)料為(wei)絕緣(yuan)材(cai)料，或隔(ge)離部(bu)的材(cai)料為(wei)半(ban)導(dao)體材(cai)料且隔(ge)離部(bu)的第二(er)(er)端(duan)(duan)未被透明(ming)導(dao)電層覆(fu)蓋。

39、與現有(you)技(ji)術相(xiang)比，該背接觸(chu)電(dian)池的制備方法的有(you)益效果與上述(shu)背接觸(chu)電(dian)池的有(you)益效果相(xiang)同，在(zai)此(ci)不做贅述(shu)。

40、作為一(yi)(yi)種可能(neng)得(de)實現方(fang)式，隔(ge)離部的(de)(de)第一(yi)(yi)端與第一(yi)(yi)半導體層接觸，第二(er)端被第二(er)半導體層和透(tou)明導電(dian)層覆蓋，漏(lou)電(dian)通(tong)道(dao)的(de)(de)摻(chan)雜(za)濃度大(da)于隔(ge)離部的(de)(de)摻(chan)雜(za)濃度；

41、形成(cheng)第一半(ban)導體層、漏電通道以及隔離部的方(fang)法包括(kuo)：

42、在(zai)半(ban)導(dao)體基底(di)的第一表面(mian)上依次形成本(ben)征半(ban)導(dao)體層和第一掩膜層；

43、去(qu)除第一(yi)區(qu)域內和隔(ge)離(li)區(qu)內用于形成漏(lou)電通道區(qu)域內的第一(yi)掩膜(mo)層；

44、對未被第(di)一掩膜層覆蓋(gai)的本(ben)(ben)征(zheng)半導(dao)體層進行摻雜，形成(cheng)第(di)一半導(dao)體層和漏(lou)電通道；隔離(li)區(qu)被第(di)一掩膜層遮擋的本(ben)(ben)征(zheng)半導(dao)體層未被摻雜，形成(cheng)隔離(li)部；

45、去除(chu)第二區域的本(ben)征半導體層。

46、作為一(yi)(yi)種可能得(de)實現方式，對未被第一(yi)(yi)掩膜層覆蓋的本征(zheng)半導體層進行摻雜(za)，形成第一(yi)(yi)半導體層和漏電通道包括：

47、對未被第(di)一(yi)(yi)掩(yan)膜層(ceng)覆蓋(gai)的(de)本征半(ban)(ban)導(dao)體(ti)層(ceng)進行(xing)第(di)一(yi)(yi)次摻(chan)雜(za)形成第(di)一(yi)(yi)半(ban)(ban)導(dao)體(ti)層(ceng)和(he)漏(lou)電(dian)(dian)通(tong)道(dao)(dao)(dao)中(zhong)間體(ti)，對漏(lou)電(dian)(dian)通(tong)道(dao)(dao)(dao)中(zhong)間體(ti)進行(xing)第(di)二次摻(chan)雜(za)形成漏(lou)電(dian)(dian)通(tong)道(dao)(dao)(dao)，形成漏(lou)電(dian)(dian)通(tong)道(dao)(dao)(dao)；其中(zhong)，漏(lou)電(dian)(dian)通(tong)道(dao)(dao)(dao)的(de)摻(chan)雜(za)濃(nong)度(du)(du)大(da)于第(di)一(yi)(yi)半(ban)(ban)導(dao)體(ti)層(ceng)的(de)摻(chan)雜(za)濃(nong)度(du)(du)。

48、作(zuo)為一(yi)(yi)種可(ke)能得實(shi)現方式，隔離部的第(di)一(yi)(yi)端與第(di)一(yi)(yi)半(ban)導體層接觸(chu)，第(di)二端被第(di)二半(ban)導體層和透(tou)明導電層覆蓋，漏電通道的摻雜(za)濃(nong)度大于隔離部的摻雜(za)濃(nong)度；

49、形(xing)成第一半導體(ti)層、漏電通道以及隔離部的(de)方法包括：

50、在半導(dao)體基底的第一表面上依次(ci)形成本征半導(dao)體層(ceng)和第一掩膜(mo)層(ceng)；

51、去(qu)除隔離區內用于形(xing)成漏電(dian)通道區域內的第一掩(yan)膜層(ceng)；

52、對未被第(di)一掩(yan)膜層(ceng)(ceng)覆蓋的本征半導體層(ceng)(ceng)進行摻雜(za)，形成漏電通道(dao)中間(jian)體；

53、去除(chu)第一區域(yu)內(nei)的第一掩膜層(ceng)；

54、對未被第一(yi)(yi)(yi)掩(yan)膜(mo)層(ceng)(ceng)覆蓋的(de)(de)本征半導體(ti)層(ceng)(ceng)進行摻(chan)雜(za)，形成(cheng)第一(yi)(yi)(yi)半導體(ti)層(ceng)(ceng)，同時對未被第一(yi)(yi)(yi)掩(yan)膜(mo)層(ceng)(ceng)覆蓋的(de)(de)漏電(dian)通道中間體(ti)進行摻(chan)雜(za)形成(cheng)漏電(dian)通道；隔離(li)(li)區被第一(yi)(yi)(yi)掩(yan)膜(mo)層(ceng)(ceng)遮擋的(de)(de)本征半導體(ti)層(ceng)(ceng)未被摻(chan)雜(za)，形成(cheng)隔離(li)(li)部；

55、去除第二區域的本征(zheng)半導體層。

56、采用上述技(ji)術方案，漏(lou)電(dian)(dian)(dian)通道的導(dao)電(dian)(dian)(dian)性更(geng)(geng)好，背接觸電(dian)(dian)(dian)池被遮擋時，漏(lou)電(dian)(dian)(dian)流更(geng)(geng)容(rong)(rong)易從漏(lou)電(dian)(dian)(dian)通道傳(chuan)輸，需要的反向電(dian)(dian)(dian)壓更(geng)(geng)小，更(geng)(geng)不容(rong)(rong)易產生熱斑。