本發明涉及(ji)一(yi)種ic封(feng)裝用載板及(ji)其封(feng)裝工(gong)藝，本發明屬于電子技術領域(yu)。

背景技術：

集成電路產業(ye)(ye)是(shi)信息(xi)化社會的(de)(de)基(ji)礎(chu)性和先導性產業(ye)(ye)，集成電路封裝(zhuang)測試是(shi)整個(ge)產業(ye)(ye)鏈中的(de)(de)重(zhong)要一(yi)環(huan)，表面貼裝(zhuang)技(ji)術(shu)(ｓｍｔ)是(shi)目前廣泛采(cai)用的(de)(de)中高端(duan)封裝(zhuang)技(ji)術(shu)，也是(shi)許多先進封裝(zhuang)技(ji)術(shu)的(de)(de)基(ji)礎(chu)。

方形(xing)扁平無引腳封(feng)裝(zhuang)（quadflatno-leadpackage，qfn）技術是(shi)一種(zhong)重要的(de)(de)集成(cheng)電路封(feng)裝(zhuang)工藝，具(ju)有表(biao)面(mian)貼裝(zhuang)式(shi)封(feng)裝(zhuang)，焊(han)盤尺寸小(xiao)、體積小(xiao)、占有pcb區域小(xiao)、元(yuan)件厚度薄、非常低的(de)(de)阻抗、自感(gan)，可滿足(zu)高(gao)速(su)或者微(wei)波的(de)(de)應用等(deng)優(you)點(dian)。由于底部中央(yang)的(de)(de)大面(mian)積裸露焊(han)盤被(bei)焊(han)接到pcb的(de)(de)散熱焊(han)盤上，使得qfn具(ju)有極佳(jia)的(de)(de)電和(he)熱性能。但缺點(dian)在于qfn中部向四(si)周連續布線，線寬(kuan)受限于銅(tong)厚、且難以設計(ji)孤島電極，增加i/0數會(hui)帶來(lai)的(de)(de)生(sheng)產成(cheng)本和(he)可靠性問題，限制(zhi)了芯片和(he)pcb板的(de)(de)設計(ji)自由度。

技術實現要素：

針對現有技(ji)術(shu)的不足(zu)，本(ben)發明(ming)提出了一(yi)種(zhong)ic封(feng)(feng)(feng)(feng)裝(zhuang)用載(zai)板及其(qi)封(feng)(feng)(feng)(feng)裝(zhuang)工(gong)藝(yi)，所制得的ic封(feng)(feng)(feng)(feng)裝(zhuang)用載(zai)板增加(jia)了集成電路封(feng)(feng)(feng)(feng)裝(zhuang)i/0數，提高(gao)了封(feng)(feng)(feng)(feng)裝(zhuang)散熱能力與(yu)封(feng)(feng)(feng)(feng)裝(zhuang)電路可靠性(xing)。

為實現上述目的(de)，本發明采用如下之技術方案：一種ic封裝用載板，包括有一合金鋁基片(pian)，所(suo)述合金鋁基片(pian)上依次設計有種子(zi)銅(tong)層、底(di)電極、電鍍銅(tong)層、頂電極。

作為一(yi)種優選方案，所述電(dian)鍍銅(tong)層可設(she)計有有機金屬轉化膜。

作為一種優選(xuan)方(fang)案，所述合金鋁(lv)基(ji)片(pian)(pian)優選(xuan)2系(xi)鋁(lv)片(pian)(pian)、3系(xi)鋁(lv)片(pian)(pian)、5系(xi)鋁(lv)片(pian)(pian)或其它硬度(du)較好的鋁(lv)片(pian)(pian)。

作為一種優選方案，所述種子銅(tong)層是通(tong)過真空磁(ci)控(kong)(kong)濺(jian)射銅(tong)形成或(huo)真空磁(ci)控(kong)(kong)濺(jian)射銅(tong)后再電鍍(du)加(jia)厚銅(tong)形成。

作為一種(zhong)優(you)選方(fang)案，所述底電(dian)極為標準電(dian)極電(dian)勢(shi)高于銅的金(jin)屬(shu)材(cai)料，優(you)選金(jin)、銀、鎳、鈀或其合金(jin)，或在上述金(jin)屬(shu)材(cai)料上電(dian)鍍鎳。

作為一種優選(xuan)方案，所述(shu)頂電極為標準電極電勢高于(yu)銅且(qie)易于(yu)焊接的金(jin)屬，優選(xuan)金(jin)、銀、鈀或其合金(jin)。

作為一種優選(xuan)方(fang)案(an)，所述(shu)有機金屬轉化(hua)膜優選(xuan)棕氧化(hua)膜和黑氧化(hua)膜。

一種ic封(feng)裝(zhuang)用載板(ban)的封(feng)裝(zhuang)工(gong)藝，其特征(zheng)在(zai)(zai)于：工(gong)藝過程(cheng)包(bao)括：（a）在(zai)(zai)合金(jin)(jin)鋁基(ji)片(pian)(pian)上(shang)真(zhen)空濺(jian)鍍(du)(du)銅(tong)(tong)(tong)，得(de)(de)到有種子銅(tong)(tong)(tong)層(ceng)覆(fu)(fu)銅(tong)(tong)(tong)基(ji)片(pian)(pian)；（b）在(zai)(zai)覆(fu)(fu)銅(tong)(tong)(tong)基(ji)片(pian)(pian)上(shang)涂覆(fu)(fu)感光材(cai)(cai)料；（c）在(zai)(zai)感光材(cai)(cai)料上(shang)進行圖(tu)形(xing)轉移，形(xing)成(cheng)(cheng)(cheng)所需(xu)圖(tu)形(xing)；（d）在(zai)(zai)所需(xu)圖(tu)形(xing)的非覆(fu)(fu)蓋(gai)感光材(cai)(cai)料區的電(dian)(dian)鍍(du)(du)底電(dian)(dian)極(ji)(ji)；（e）在(zai)(zai)底電(dian)(dian)極(ji)(ji)上(shang)繼(ji)續(xu)電(dian)(dian)鍍(du)(du)銅(tong)(tong)(tong)，形(xing)成(cheng)(cheng)(cheng)電(dian)(dian)鍍(du)(du)銅(tong)(tong)(tong)層(ceng)；（f）在(zai)(zai)電(dian)(dian)銅(tong)(tong)(tong)層(ceng)上(shang)電(dian)(dian)鍍(du)(du)頂(ding)電(dian)(dian)極(ji)(ji)；（g）去(qu)除感光材(cai)(cai)料；（h）在(zai)(zai)電(dian)(dian)鍍(du)(du)銅(tong)(tong)(tong)層(ceng)修飾有機金(jin)(jin)屬轉化膜；（i）成(cheng)(cheng)(cheng)型得(de)(de)到所需(xu)外形(xing)的載板(ban)；（j）將芯片(pian)(pian)邦定在(zai)(zai)載板(ban)頂(ding)電(dian)(dian)極(ji)(ji)上(shang)并(bing)灌注封(feng)裝(zhuang)樹脂材(cai)(cai)料；（k）樹脂固化成(cheng)(cheng)(cheng)型后去(qu)除掉(diao)合金(jin)(jin)鋁基(ji)片(pian)(pian)及種子銅(tong)(tong)(tong)層(ceng)，露出(chu)底電(dian)(dian)極(ji)(ji)，完成(cheng)(cheng)(cheng)封(feng)裝(zhuang)。

作為一種優選(xuan)方(fang)案(an)，所述感光(guang)材料優選(xuan)聚丙烯酸酯類的干膜、濕膜。

作為一種優選(xuan)方(fang)案，所述在電鍍(du)銅層修(xiu)飾有機(ji)金屬轉化膜，優選(xuan)采用棕氧化

或黑氧化(hua)工藝(yi)在銅的表面反應來(lai)獲取(qu)。

作為(wei)一種優(you)選方(fang)案，所述封(feng)裝樹脂材料優(you)選環(huan)氧樹脂。

作為一種優選(xuan)方案，所述樹脂固化成(cheng)型后(hou)去除合金鋁基片及種子(zi)銅(tong)層，優選(xuan)

氫氧化鈉溶(rong)液(ye)(ye)和硫酸溶(rong)液(ye)(ye)。

本發明相比于目前的(de)(de)qfn封(feng)(feng)裝(zhuang)工藝，保留了(le)(le)原有qfn的(de)(de)優(you)勢，同(tong)時解決線寬設(she)計(ji)，布線設(she)計(ji)以及(ji)孤島電(dian)極(ji)設(she)計(ji)自由性(xing)的(de)(de)缺點，可顯著增(zeng)(zeng)加(jia)集(ji)成電(dian)路封(feng)(feng)裝(zhuang)i/0數，另外，通過頂(ding)電(dian)極(ji)和底(di)電(dian)極(ji)之間(jian)的(de)(de)電(dian)鍍(du)銅表面黑(hei)氧(yang)化或棕氧(yang)化，大大增(zeng)(zeng)強了(le)(le)與封(feng)(feng)裝(zhuang)樹脂材料的(de)(de)結合，提升封(feng)(feng)裝(zhuang)散熱能(neng)力(li)與封(feng)(feng)裝(zhuang)電(dian)路可靠性(xing)。

附圖說明

圖(tu)(tu)1本發明金屬(shu)鍍層(ceng)結構示(shi)意(yi)圖(tu)(tu)。

1-合金鋁基片；2-種子銅(tong)層；3-底(di)電(dian)極(ji)；4-電(dian)鍍銅(tong)層；5-頂電(dian)極(ji)。

圖2本發明工藝流程圖。

a-在(zai)合金鋁基片上真空濺鍍(du)(du)銅(tong)(tong)；b-在(zai)種子銅(tong)(tong)層(ceng)上涂(tu)覆感(gan)光(guang)材料；c-形成所需圖形；d-鍍(du)(du)底電極；e-電鍍(du)(du)銅(tong)(tong)層(ceng)；f-鍍(du)(du)頂電極；g-去(qu)除(chu)感(gan)光(guang)材料；h-在(zai)電鍍(du)(du)銅(tong)(tong)層(ceng)修飾有機金屬轉化(hua)膜；i-成型；j-貼芯片、邦線、封裝樹脂；k-去(qu)除(chu)掉合金鋁基片及種子銅(tong)(tong)層(ceng)。

具體實施方式

實施例1：在(zai)3系合金(jin)鋁基(ji)片(pian)1上(shang)真空濺鍍銅，得(de)到(dao)其銅厚大于5納米的(de)(de)(de)種(zhong)子(zi)(zi)銅層(ceng)；在(zai)種(zhong)子(zi)(zi)銅層(ceng)2上(shang)貼覆(fu)聚(ju)丙烯酸(suan)酯(zhi)(zhi)干(gan)膜，通(tong)過(guo)曝光圖(tu)形轉移，形成(cheng)所(suo)需(xu)線路圖(tu)形；在(zai)未(wei)覆(fu)蓋聚(ju)丙烯酸(suan)酯(zhi)(zhi)干(gan)膜的(de)(de)(de)種(zhong)子(zi)(zi)銅層(ceng)2上(shang)鍍3μm厚的(de)(de)(de)銀(yin)作(zuo)為底(di)(di)電(dian)(dian)極3，在(zai)銀(yin)底(di)(di)電(dian)(dian)極3上(shang)繼續(xu)電(dian)(dian)鍍40μm的(de)(de)(de)電(dian)(dian)鍍銅層(ceng)4；在(zai)電(dian)(dian)鍍銅層(ceng)上(shang)4再(zai)鍍3μm銀(yin)作(zuo)為頂電(dian)(dian)極5，金(jin)屬層(ceng)側面(mian)結構如圖(tu)1所(suo)示(shi)(shi)。去除聚(ju)丙烯酸(suan)酯(zhi)(zhi)干(gan)膜，將全部材料浸(jin)入硫(liu)酸(suan)-過(guo)氧(yang)化(hua)氫(qing)棕氧(yang)化(hua)溶液(ye)中使得(de)種(zhong)子(zi)(zi)銅層(ceng)2表面(mian)生成(cheng)有(you)機金(jin)屬轉化(hua)膜，按設計(ji)要(yao)求成(cheng)型得(de)到(dao)所(suo)需(xu)載板(ban)的(de)(de)(de)外形。在(zai)芯片(pian)邦定在(zai)載板(ban)頂電(dian)(dian)極5上(shang)后灌(guan)注環(huan)氧(yang)封裝樹(shu)脂材料，最(zui)后，將合金(jin)鋁基(ji)片(pian)1及(ji)種(zhong)子(zi)(zi)銅層(ceng)2以(yi)氫(qing)氧(yang)化(hua)鈉溶液(ye)+硫(liu)酸(suan)溶液(ye)完(wan)全腐(fu)蝕(shi)掉露出銀(yin)底(di)(di)電(dian)(dian)極3完(wan)成(cheng)封裝。工藝流程如圖(tu)2所(suo)示(shi)(shi)。

實(shi)施例2：在(zai)(zai)3系合(he)金(jin)(jin)(jin)鋁基(ji)片(pian)(pian)1上(shang)真空濺鍍(du)銅(tong)(tong)，再通過(guo)硫(liu)酸(suan)銅(tong)(tong)鍍(du)銅(tong)(tong)得(de)到其銅(tong)(tong)厚(hou)大于(yu)5微(wei)米的種(zhong)子(zi)銅(tong)(tong)層(ceng)(ceng)(ceng)2；在(zai)(zai)種(zhong)子(zi)銅(tong)(tong)層(ceng)(ceng)(ceng)2上(shang)涂覆(fu)聚(ju)(ju)丙(bing)烯酸(suan)酯(zhi)(zhi)濕膜(mo)(mo)，通過(guo)曝光(guang)圖形(xing)轉(zhuan)(zhuan)移，形(xing)成(cheng)(cheng)(cheng)所(suo)需(xu)線路圖形(xing)；在(zai)(zai)未覆(fu)蓋(gai)聚(ju)(ju)丙(bing)烯酸(suan)酯(zhi)(zhi)濕膜(mo)(mo)的種(zhong)子(zi)銅(tong)(tong)層(ceng)(ceng)(ceng)2上(shang)鍍(du)0.1μm厚(hou)的金(jin)(jin)(jin)，金(jin)(jin)(jin)上(shang)丙(bing)電(dian)(dian)鍍(du)15um的鎳，形(xing)成(cheng)(cheng)(cheng)底電(dian)(dian)極(ji)(ji)3，在(zai)(zai)底電(dian)(dian)極(ji)(ji)3上(shang)繼續(xu)電(dian)(dian)鍍(du)40μm的電(dian)(dian)鍍(du)銅(tong)(tong)層(ceng)(ceng)(ceng)4；在(zai)(zai)電(dian)(dian)鍍(du)銅(tong)(tong)層(ceng)(ceng)(ceng)上(shang)4再鍍(du)0.1μm金(jin)(jin)(jin)作(zuo)為頂電(dian)(dian)極(ji)(ji)5，金(jin)(jin)(jin)屬層(ceng)(ceng)(ceng)側面結構(gou)如圖1所(suo)示。去除聚(ju)(ju)丙(bing)烯酸(suan)酯(zhi)(zhi)濕膜(mo)(mo)，將(jiang)全部材料浸(jin)入(ru)硫(liu)酸(suan)-過(guo)氧(yang)化(hua)氫(qing)棕(zong)氧(yang)化(hua)溶液(ye)(ye)中使得(de)種(zhong)子(zi)銅(tong)(tong)層(ceng)(ceng)(ceng)2表(biao)面生成(cheng)(cheng)(cheng)有機金(jin)(jin)(jin)屬轉(zhuan)(zhuan)化(hua)膜(mo)(mo)，按(an)設(she)計要求成(cheng)(cheng)(cheng)型得(de)到所(suo)需(xu)載(zai)板的外形(xing)。在(zai)(zai)芯(xin)片(pian)(pian)邦定在(zai)(zai)載(zai)板頂電(dian)(dian)極(ji)(ji)5上(shang)后(hou)灌注環氧(yang)封裝樹(shu)脂材料，最后(hou)，將(jiang)合(he)金(jin)(jin)(jin)鋁基(ji)片(pian)(pian)1及種(zhong)子(zi)銅(tong)(tong)層(ceng)(ceng)(ceng)2以(yi)氫(qing)氧(yang)化(hua)鈉溶液(ye)(ye)+硫(liu)酸(suan)溶液(ye)(ye)完全腐蝕掉露出銀底電(dian)(dian)極(ji)(ji)3完成(cheng)(cheng)(cheng)封裝。工藝(yi)流程如圖2所(suo)示。

實施例3：

在(zai)(zai)(zai)6系(xi)合(he)金鋁(lv)基片1上(shang)真空濺(jian)鍍(du)(du)銅(tong)(tong)(tong)(tong)，得(de)(de)到其銅(tong)(tong)(tong)(tong)厚大于5納米(mi)的(de)(de)種(zhong)(zhong)(zhong)子銅(tong)(tong)(tong)(tong)層(ceng)(ceng)；在(zai)(zai)(zai)種(zhong)(zhong)(zhong)子銅(tong)(tong)(tong)(tong)層(ceng)(ceng)2上(shang)貼(tie)覆(fu)聚丙烯(xi)(xi)酸(suan)酯干膜，通過(guo)(guo)曝(pu)光圖形(xing)轉(zhuan)移，形(xing)成(cheng)所需線路圖形(xing)；在(zai)(zai)(zai)未覆(fu)蓋聚丙烯(xi)(xi)酸(suan)酯干膜的(de)(de)種(zhong)(zhong)(zhong)子銅(tong)(tong)(tong)(tong)層(ceng)(ceng)2上(shang)鍍(du)(du)3μm厚的(de)(de)銀(yin)(yin)作(zuo)為(wei)底(di)電(dian)極(ji)3，在(zai)(zai)(zai)銀(yin)(yin)底(di)電(dian)極(ji)3上(shang)繼續電(dian)鍍(du)(du)40μm的(de)(de)電(dian)鍍(du)(du)銅(tong)(tong)(tong)(tong)層(ceng)(ceng)4；在(zai)(zai)(zai)電(dian)鍍(du)(du)銅(tong)(tong)(tong)(tong)層(ceng)(ceng)上(shang)4再鍍(du)(du)3μm銀(yin)(yin)作(zuo)為(wei)頂電(dian)極(ji)5，金屬層(ceng)(ceng)側(ce)面結(jie)構如(ru)圖1所示。去除聚丙烯(xi)(xi)酸(suan)酯干膜，將(jiang)(jiang)全(quan)部材料浸(jin)入硫酸(suan)-過(guo)(guo)氧化(hua)(hua)氫(qing)棕氧化(hua)(hua)溶(rong)(rong)液中(zhong)使(shi)得(de)(de)種(zhong)(zhong)(zhong)子銅(tong)(tong)(tong)(tong)層(ceng)(ceng)2表面生成(cheng)有機金屬轉(zhuan)化(hua)(hua)膜，按設計要求(qiu)成(cheng)型得(de)(de)到所需載板(ban)的(de)(de)外形(xing)。在(zai)(zai)(zai)芯片邦定在(zai)(zai)(zai)載板(ban)頂電(dian)極(ji)5上(shang)后灌注環氧封(feng)裝(zhuang)樹脂(zhi)材料，最后，將(jiang)(jiang)合(he)金鋁(lv)基片1及種(zhong)(zhong)(zhong)子銅(tong)(tong)(tong)(tong)層(ceng)(ceng)2以(yi)氫(qing)氧化(hua)(hua)鈉溶(rong)(rong)液+硫酸(suan)溶(rong)(rong)液完全(quan)腐蝕掉露(lu)出銀(yin)(yin)底(di)電(dian)極(ji)3完成(cheng)封(feng)裝(zhuang)。工藝流程如(ru)圖2所示。

技術特征：

技術總結
本發明提出了一種IC封裝用載板及其封裝工藝，工藝過程包括：（a）在合金鋁基片上真空鍍銅,（b）在銅上涂覆感光材料,（c）在感光材料上進行圖形轉移,（d）在所需圖形的非覆蓋感光材料區電鍍底電極，（e）在底電極上繼續電鍍銅，（f）在電鍍銅上電鍍頂電極，（g）去除感光材料，（h）在電鍍銅層修飾有機金屬轉化膜，（i）成型得到所需外形的載板，后固晶封裝，再去除合金鋁層及種子銅層完成封裝。本發明可解決線寬設計，布線設計以及孤島電極設計自由性差的缺點，可顯著增加集成電路封裝I/0數，另外，通過對電極銅表面進行黑氧化或棕氧化，增強了與封裝樹脂材料的結合力，提升了封裝散熱能力與封裝電路可靠性。

技術研發人員：何忠亮;郭秋衛;丁華;朱爭鳴
受保護的技術使用者：深圳市環基實業有限公司
技術研發日：2017.04.19
技術公布日：2017.09.08