本發明實施(shi)例涉及(ji)半(ban)導(dao)體技術領域，尤其涉及(ji)一種半(ban)導(dao)體存儲器及(ji)其制(zhi)作方法。

背景技術：

為了實(shi)現存(cun)儲(chu)器的(de)大容量、高(gao)集成度(du)和高(gao)性能，可以(yi)采用(yong)存(cun)儲(chu)芯片(pian)(pian)堆(dui)(dui)(dui)(dui)疊(die)(die)(die)(die)的(de)方(fang)(fang)式。目前芯片(pian)(pian)堆(dui)(dui)(dui)(dui)疊(die)(die)(die)(die)的(de)方(fang)(fang)式主要(yao)有兩種：一種是存(cun)儲(chu)芯片(pian)(pian)以(yi)錯(cuo)位式的(de)方(fang)(fang)式一個接(jie)(jie)一個地堆(dui)(dui)(dui)(dui)疊(die)(die)(die)(die)上去，再用(yong)金屬引線鍵(jian)合一階一階地把各個芯片(pian)(pian)電(dian)(dian)連接(jie)(jie)在(zai)一起。采用(yong)錯(cuo)位式結(jie)構的(de)目的(de)是為了實(shi)施金屬引線鍵(jian)合。另(ling)一種是把存(cun)儲(chu)芯片(pian)(pian)垂直地疊(die)(die)(die)(die)在(zai)一起，用(yong)硅(gui)通(tong)孔(Through Silicon Via，TSV)來實(shi)現各堆(dui)(dui)(dui)(dui)疊(die)(die)(die)(die)存(cun)儲(chu)芯片(pian)(pian)間電(dian)(dian)信號連接(jie)(jie)。這兩種方(fang)(fang)法，都有較(jiao)顯(xian)著的(de)缺陷：芯片(pian)(pian)錯(cuo)位式堆(dui)(dui)(dui)(dui)疊(die)(die)(die)(die)加(jia)(jia)引線鍵(jian)合，隨著堆(dui)(dui)(dui)(dui)疊(die)(die)(die)(die)的(de)芯片(pian)(pian)數增(zeng)加(jia)(jia)，不(bu)僅造成封裝體(ti)尺寸較(jiao)大，而(er)且電(dian)(dian)信號延遲增(zeng)長；而(er)基(ji)于硅(gui)通(tong)孔技術的(de)堆(dui)(dui)(dui)(dui)疊(die)(die)(die)(die)，不(bu)僅工藝復(fu)雜昂貴，而(er)且用(yong)于大規模制造硅(gui)通(tong)孔芯片(pian)(pian)的(de)供應(ying)鏈仍未(wei)完全(quan)形(xing)成。

這(zhe)(zhe)兩(liang)種(zhong)堆(dui)疊技術還有(you)兩(liang)個共(gong)同(tong)的(de)低效率特(te)征：1)堆(dui)疊封裝體的(de)制作(zuo)，都是以(yi)單顆(ke)形式完成(cheng)的(de)；2)電性(xing)能(neng)和功能(neng)測試(shi)，亦是以(yi)單顆(ke)形式來進(jin)行。這(zhe)(zhe)些缺陷，使(shi)得現有(you)大容量存(cun)儲器制造技術越(yue)來越(yue)難于滿(man)足半導體技術的(de)發展(zhan)和微電子器件制造的(de)趨勢——更高(gao)性(xing)能(neng)，更小的(de)形狀(zhuang)系數(form factor)，更低的(de)成(cheng)本。

扇出型晶(jing)圓級技(ji)術(FOWLP)可以實現存(cun)儲芯片的(de)堆(dui)疊，從而作(zuo)為大容量存(cun)儲器制造(zao)的(de)解決方案。但(dan)目前FOWLP技(ji)術是二(er)維(wei)的(de)，難以在具有多存(cun)儲單元的(de)高端存(cun)儲器裝(zhuang)置的(de)制造(zao)上得到應(ying)用。

美國專利US2005/0124093A1(Wen-KunYang等)介紹了二(er)維的扇出型晶圓級封裝技術。如(ru)圖1所示，100為載板；110為芯(xin)片；130和130a為重布線層(ceng)(RDL)；148為芯(xin)片層(ceng)間電互連；120，122，132，120a和132a為介電質；136為對外連接終端(錫球)。

美國專利(li)US2009/0014876A1(Cheul-Joong Youn等(deng))提出(chu)了基(ji)于芯(xin)(xin)片(pian)(pian)堆(dui)疊扇出(chu)型晶圓級技術實現(xian)存儲(chu)裝(zhuang)置三(san)維集成的(de)(de)(de)方(fang)法(fa)(fa)(fa)，如(ru)圖2所示，104，110，132和142為芯(xin)(xin)片(pian)(pian)；106，112，134和144為絕緣介(jie)電質；108，118，136和146為芯(xin)(xin)片(pian)(pian)層(ceng)間(jian)電互(hu)連；116為最外層(ceng)RDL；120為對(dui)外連接終端(duan)(錫球)。該(gai)專利(li)提出(chu)的(de)(de)(de)方(fang)法(fa)(fa)(fa)是(shi)一理想化，在(zai)工程上難以實現(xian)的(de)(de)(de)概念。因為：1)若用(yong)塑(su)封(feng)材(cai)料填充(chong)芯(xin)(xin)片(pian)(pian)間(jian)空隙，金屬(shu)重布線層(ceng)(RDL)無法(fa)(fa)(fa)直(zhi)接沉積在(zai)塑(su)封(feng)材(cai)料上；2)采用(yong)旋涂(tu)介(jie)電材(cai)料，難以做到與芯(xin)(xin)片(pian)(pian)表面齊平；3)芯(xin)(xin)片(pian)(pian)主動(dong)面金屬(shu)焊盤的(de)(de)(de)防止有機物(wu)污(wu)染問題等(deng)。而且，根據該(gai)專利(li)介(jie)紹的(de)(de)(de)基(ji)本方(fang)法(fa)(fa)(fa)，堆(dui)疊4層(ceng)以上芯(xin)(xin)片(pian)(pian)是(shi)難以實現(xian)的(de)(de)(de)。

美(mei)國專利US8872350B2(Shigenorl Sawachi等)介(jie)紹了兩種(zhong)(zhong)填充(chong)存(cun)儲芯(xin)(xin)片(pian)(pian)(pian)間空隙并形成芯(xin)(xin)片(pian)(pian)(pian)層間電(dian)連(lian)接(jie)通道(dao)方法。如圖3所示，1為(wei)散熱片(pian)(pian)(pian)(亦是載板)；2為(wei)芯(xin)(xin)片(pian)(pian)(pian)；6為(wei)RDL；9為(wei)芯(xin)(xin)片(pian)(pian)(pian)層間電(dian)互連(lian)；4為(wei)絕緣介(jie)電(dian)質(zhi)(zhi)；13為(wei)對(dui)外連(lian)接(jie)終(zhong)端(duan)(duan)(duan)(錫球)。第一種(zhong)(zhong)方法是塑(su)封后激(ji)光(guang)鉆孔(kong)。該方法對(dui)普通半導體(ti)芯(xin)(xin)片(pian)(pian)(pian)封裝可以(yi)實施，但不(bu)能用(yong)于(yu)用(yong)16nm(或以(yi)下)工藝制造的(de)(de)(de)高(gao)端(duan)(duan)(duan)存(cun)儲芯(xin)(xin)片(pian)(pian)(pian)，因為(wei)這(zhe)類高(gao)端(duan)(duan)(duan)存(cun)儲芯(xin)(xin)片(pian)(pian)(pian)的(de)(de)(de)節距(ju)在50μm左右，激(ji)光(guang)鉆孔(kong)不(bu)能施用(yong)于(yu)具有這(zhe)么小節距(ju)的(de)(de)(de)芯(xin)(xin)片(pian)(pian)(pian)；第二(er)種(zhong)(zhong)方法將是一很困難的(de)(de)(de)(深度(du)盲孔(kong)填充(chong))，且昂貴的(de)(de)(de)(因采(cai)用(yong)很厚的(de)(de)(de)光(guang)敏介(jie)電(dian)質(zhi)(zhi)(100μm左右)作為(wei)芯(xin)(xin)片(pian)(pian)(pian)間填充(chong)材料)制造技(ji)術。該專利提供的(de)(de)(de)方法制造成本(ben)高(gao)，且難以(yi)實現大規模量產。

因此，目前(qian)在(zai)大(da)容量(liang)存儲(chu)器(qi)堆(dui)(dui)(dui)疊技術上存在(zai)的(de)缺陷是(shi)：堆(dui)(dui)(dui)疊效率低、多層堆(dui)(dui)(dui)疊技術難(nan)(nan)以實現，以及難(nan)(nan)以大(da)規模(mo)量(liang)產(chan)。

技術實現要素：

有鑒(jian)于此，本發明實施例(li)提供(gong)一(yi)種半(ban)導體存儲器及其(qi)制作(zuo)方法(fa)，以解決現有技(ji)術中半(ban)導體存儲器件堆(dui)疊(die)效率低(di)、多層堆(dui)疊(die)技(ji)術難(nan)(nan)以實現，以及難(nan)(nan)以大規模量產的技(ji)術問題。

第(di)一(yi)方(fang)面，本發明實施(shi)例(li)提供了一(yi)種半(ban)導(dao)體存儲(chu)器，包括：自(zi)下(xia)(xia)而上(shang)依次(ci)堆疊的(de)至少兩個存儲(chu)芯(xin)片組(zu)(zu)，上(shang)下(xia)(xia)相(xiang)鄰的(de)兩個所述存儲(chu)芯(xin)片組(zu)(zu)的(de)重布線層通過(guo)層間導(dao)電柱(zhu)電連(lian)(lian)接，且位于最下(xia)(xia)方(fang)的(de)存儲(chu)芯(xin)片組(zu)(zu)的(de)重布線層與對外連(lian)(lian)接凸塊(kuai)電連(lian)(lian)接；

所(suo)述(shu)存(cun)儲(chu)(chu)(chu)芯片(pian)(pian)(pian)組包括依次堆疊(die)的(de)至少(shao)兩(liang)個(ge)存(cun)儲(chu)(chu)(chu)芯片(pian)(pian)(pian)，以及位于所(suo)述(shu)至少(shao)兩(liang)個(ge)存(cun)儲(chu)(chu)(chu)芯片(pian)(pian)(pian)下方的(de)復(fu)(fu)合絕緣層(ceng)(ceng)(ceng)(ceng)，所(suo)述(shu)至少(shao)兩(liang)個(ge)存(cun)儲(chu)(chu)(chu)芯片(pian)(pian)(pian)包封為一體(ti)結構，所(suo)述(shu)重布線(xian)層(ceng)(ceng)(ceng)(ceng)設置在所(suo)述(shu)復(fu)(fu)合絕緣層(ceng)(ceng)(ceng)(ceng)中(zhong)，所(suo)述(shu)至少(shao)兩(liang)個(ge)存(cun)儲(chu)(chu)(chu)芯片(pian)(pian)(pian)的(de)層(ceng)(ceng)(ceng)(ceng)內導電(dian)柱錯(cuo)開預設角度，以分別與所(suo)述(shu)重布線(xian)層(ceng)(ceng)(ceng)(ceng)電(dian)連接。

第二方(fang)面，本(ben)發明實施例還提供了一種(zhong)半導(dao)體(ti)存儲(chu)器的制(zhi)作方(fang)法，包(bao)括：在載板自下而上(shang)依次(ci)制(zhi)作至少兩個存儲(chu)芯片組，以及制(zhi)作層(ceng)間導(dao)電柱，所述層(ceng)間導(dao)電柱分別與上(shang)下相鄰的兩個所述存儲(chu)芯片組的重布線(xian)層(ceng)電連接(jie),且位于最(zui)上(shang)方(fang)的存儲(chu)芯片組的重布線(xian)層(ceng)與對外(wai)連接(jie)凸(tu)塊電連接(jie)；

其中在(zai)制作任一(yi)存儲(chu)芯片組時，包括如下步驟：

將所述(shu)至(zhi)(zhi)少兩個存(cun)儲芯片(pian)依次堆疊，所述(shu)至(zhi)(zhi)少兩個存(cun)儲芯片(pian)的層內導電柱錯開預設(she)角度；

將所(suo)述至(zhi)少兩個(ge)存儲芯片包封為(wei)一體結構(gou)，且將所(suo)述層(ceng)內導電柱露出；

在所(suo)述(shu)(shu)一體結構上方形成復合(he)絕緣層，所(suo)述(shu)(shu)復合(he)絕緣層中形成有重(zhong)布線層，所(suo)述(shu)(shu)重(zhong)布線層與所(suo)述(shu)(shu)層內(nei)導電(dian)(dian)柱電(dian)(dian)連接(jie)。

本(ben)發明實施例(li)提(ti)供的半(ban)導(dao)體存(cun)儲(chu)(chu)(chu)器(qi)及其制(zhi)作方法，通(tong)過將至(zhi)少(shao)兩(liang)個存(cun)儲(chu)(chu)(chu)芯(xin)片(pian)依次堆(dui)疊組(zu)成存(cun)儲(chu)(chu)(chu)芯(xin)片(pian)組(zu)，其中至(zhi)少(shao)兩(liang)個存(cun)儲(chu)(chu)(chu)芯(xin)片(pian)的層內導(dao)電柱(zhu)錯開預設角度，分別與重布線層電連(lian)(lian)接；并(bing)將至(zhi)少(shao)兩(liang)個存(cun)儲(chu)(chu)(chu)芯(xin)片(pian)組(zu)依次堆(dui)疊組(zu)成存(cun)儲(chu)(chu)(chu)器(qi)，其中上下相鄰的兩(liang)個存(cun)儲(chu)(chu)(chu)芯(xin)片(pian)組(zu)的重布線層通(tong)過層間導(dao)電柱(zhu)電連(lian)(lian)接，實現(xian)了(le)(le)存(cun)儲(chu)(chu)(chu)器(qi)的大容量和高(gao)集(ji)成度，有效(xiao)提(ti)高(gao)了(le)(le)存(cun)儲(chu)(chu)(chu)器(qi)的堆(dui)疊效(xiao)率，并(bing)且降低了(le)(le)堆(dui)疊難度。

附圖說明

圖(tu)1為現有技術提(ti)供的二維扇出型晶圓級封(feng)裝技術的存儲器的結構示(shi)意(yi)圖(tu)；

圖2為現(xian)有技術(shu)提供(gong)的基于芯片堆疊扇(shan)出(chu)型晶圓(yuan)級技術(shu)的存儲器的結構示意圖；

圖3為現有技術提供的第三種(zhong)存儲(chu)器的結構示意圖；

圖4本發明(ming)實施例(li)提供的一種半導體存儲器的剖面結構(gou)示意圖；

圖5為本發明實(shi)施例(li)提供的一種(zhong)半導體(ti)存儲器(qi)的載(zai)板的俯視示(shi)意(yi)圖及(ji)在載(zai)板上(shang)涂覆(fu)臨時鍵(jian)合膠的剖(pou)面結構示(shi)意(yi)圖；

圖(tu)(tu)6為本發明實施例提供的一種在存儲器晶圓上形成(cheng)第一存儲芯片的俯(fu)視(shi)示意圖(tu)(tu)和(he)剖面結構示意圖(tu)(tu)；

圖7為本發明實施例(li)提供的一種在(zai)存儲(chu)器晶圓上形成(cheng)第二(er)存儲(chu)芯片的俯視示(shi)意(yi)圖和(he)剖面結構示(shi)意(yi)圖；

圖8a為本發明(ming)實施例提供的切割(ge)存(cun)儲器晶圓形成多個第一(yi)存(cun)儲芯(xin)片的剖面結(jie)構(gou)示意圖；

圖(tu)8b為本發明實施例提供的(de)切割存儲(chu)器晶圓形成(cheng)多個第二存儲(chu)芯(xin)片(pian)的(de)剖面結構示意圖(tu)；

圖9a、圖9b和圖9c為本發(fa)明實施例(li)提供的在載(zai)板上制作第一存(cun)儲(chu)芯片和第二存(cun)儲(chu)芯片的結構示意圖；

圖10為本發(fa)明(ming)實施(shi)例提供的對(dui)形成有第一(yi)存儲芯片(pian)和第二存儲芯片(pian)的載板進行固封，形成固封層的剖(pou)面結構示意圖；

圖(tu)11為本發(fa)明(ming)實(shi)施例提供的對固封層進行減薄的剖面結構示意圖(tu)；

圖12為(wei)本發明實(shi)施例提供的(de)在固封層(ceng)上形成下部(bu)絕(jue)緣層(ceng)的(de)剖面結構示意(yi)圖；

圖13為(wei)本發明實施例(li)提供的在下部絕緣層(ceng)(ceng)上形成重布線層(ceng)(ceng)的剖面結構示意圖；

圖14為(wei)本發明實施例提供的在重布(bu)線層上形成上部絕(jue)緣層的剖面(mian)結構示意圖；

圖15為本發明實施例提供的形成層間導電(dian)柱的剖面結構(gou)示意(yi)圖；

圖(tu)16為本(ben)發明實施例(li)提供的(de)在層(ceng)間導電柱(zhu)之間制備一體結(jie)構(gou)的(de)剖面結(jie)構(gou)示意圖(tu)；

圖17為本發(fa)明實施例提(ti)供(gong)的對(dui)第二層存儲芯片組進行固封，形成固封層的剖面(mian)結構示(shi)意(yi)圖；

圖18為本發明實施例提供的(de)對(dui)第(di)二層(ceng)存儲(chu)芯片(pian)的(de)固封層(ceng)進行減薄(bo)的(de)剖(pou)面(mian)結(jie)構示意圖；

圖19為本發明實施例提(ti)供的形成第二層存(cun)儲芯片組的下部絕(jue)緣層的剖面(mian)結(jie)構示意圖；

圖20為本發明(ming)實施(shi)例提供的形成第二層(ceng)存(cun)儲(chu)芯(xin)片組的重布線層(ceng)和上部絕緣(yuan)層(ceng)的剖面結構示意圖；

圖21為本發(fa)明實(shi)施例提(ti)供的形成(cheng)層間(jian)導(dao)電柱的剖面結構示意圖；

圖(tu)22為本(ben)發(fa)明實(shi)施例提供的(de)(de)形(xing)成四個存儲(chu)芯片組的(de)(de)剖面結構(gou)示意圖(tu)；

圖(tu)23為本發明(ming)實(shi)施例提供的在復合絕(jue)緣層上制作(zuo)對外連(lian)接凸(tu)塊的剖(pou)面(mian)結構(gou)示意圖(tu)；

圖24為本發(fa)明實(shi)施(shi)例提供的(de)圖23的(de)倒置并去除載板和鍵合(he)膠的(de)結構(gou)示意圖；

圖25為本發明實施例提供的對存儲(chu)器沉(chen)積保護膜的結構示意圖；

圖26為本(ben)發明實(shi)施例提供的對(dui)形成的多個存(cun)儲器進行切(qie)割的結(jie)構(gou)示意圖；

圖(tu)27為本發明實施例提供的(de)(de)單個存儲器的(de)(de)結構示意(yi)圖(tu)。

具體實施方式

為使本發明(ming)的(de)(de)(de)(de)(de)目的(de)(de)(de)(de)(de)、技(ji)術方(fang)案(an)和優點(dian)更加清楚，以下將結合本發明(ming)實施(shi)例中的(de)(de)(de)(de)(de)附圖(tu)，通(tong)(tong)過具體實施(shi)方(fang)式，完整地描(miao)述本發明(ming)的(de)(de)(de)(de)(de)技(ji)術方(fang)案(an)。顯然，所(suo)描(miao)述的(de)(de)(de)(de)(de)實施(shi)例是(shi)本發明(ming)的(de)(de)(de)(de)(de)一部分實施(shi)例，而不是(shi)全(quan)部的(de)(de)(de)(de)(de)實施(shi)例，基于(yu)本發明(ming)的(de)(de)(de)(de)(de)實施(shi)例，本領域普通(tong)(tong)技(ji)術人員在沒有做出創造性勞(lao)動的(de)(de)(de)(de)(de)前提下獲得的(de)(de)(de)(de)(de)所(suo)有其他實施(shi)例，均落(luo)入本發明(ming)的(de)(de)(de)(de)(de)保護范(fan)圍之內。

實施例

圖(tu)4為本發(fa)明實施(shi)(shi)例提供的半(ban)(ban)導體(ti)(ti)存(cun)(cun)(cun)(cun)(cun)儲(chu)器(qi)(qi)的結構(gou)示意(yi)圖(tu)。本發(fa)明實施(shi)(shi)例提供的半(ban)(ban)導體(ti)(ti)存(cun)(cun)(cun)(cun)(cun)儲(chu)器(qi)(qi)可以用作高速緩沖存(cun)(cun)(cun)(cun)(cun)儲(chu)器(qi)(qi)、主(zhu)存(cun)(cun)(cun)(cun)(cun)儲(chu)器(qi)(qi)或堆棧(zhan)存(cun)(cun)(cun)(cun)(cun)儲(chu)器(qi)(qi)等。

本實(shi)施例提供的(de)半導體存儲器，包(bao)括(kuo)：自(zi)下而上依次堆疊(die)的(de)兩(liang)個存儲芯(xin)(xin)片組(zu)，上下相鄰的(de)兩(liang)個存儲芯(xin)(xin)片組(zu)的(de)重布(bu)線層通過層間導電柱電連接(jie)，且位(wei)于最下方的(de)存儲芯(xin)(xin)片組(zu)的(de)重布(bu)線層與對外連接(jie)凸(tu)塊電連接(jie)；

存儲(chu)芯(xin)(xin)片(pian)(pian)組(zu)包括(kuo)依次堆疊的兩(liang)個(ge)存儲(chu)芯(xin)(xin)片(pian)(pian)，以及位于兩(liang)個(ge)存儲(chu)芯(xin)(xin)片(pian)(pian)下方的復(fu)合(he)絕(jue)緣(yuan)層(ceng)，所述至(zhi)少(shao)兩(liang)個(ge)存儲(chu)芯(xin)(xin)片(pian)(pian)包封為一(yi)體結構，重(zhong)布(bu)線層(ceng)設(she)置在復(fu)合(he)絕(jue)緣(yuan)層(ceng)中(zhong)，兩(liang)個(ge)存儲(chu)芯(xin)(xin)片(pian)(pian)的層(ceng)內導電(dian)(dian)柱錯開預設(she)角度，以分(fen)別(bie)與(yu)重(zhong)布(bu)線層(ceng)電(dian)(dian)連接。

示例(li)性的，圖(tu)4所示的存(cun)儲(chu)(chu)器包(bao)(bao)括(kuo)四(si)個存(cun)儲(chu)(chu)芯(xin)(xin)(xin)片(pian)(pian)(pian)(pian)組(zu)，這里以四(si)個存(cun)儲(chu)(chu)芯(xin)(xin)(xin)片(pian)(pian)(pian)(pian)組(zu)為例(li)進行(xing)說明，如圖(tu)4所示，存(cun)儲(chu)(chu)器包(bao)(bao)括(kuo)第(di)(di)一(yi)存(cun)儲(chu)(chu)芯(xin)(xin)(xin)片(pian)(pian)(pian)(pian)組(zu)310、第(di)(di)二存(cun)儲(chu)(chu)芯(xin)(xin)(xin)片(pian)(pian)(pian)(pian)組(zu)510、第(di)(di)三存(cun)儲(chu)(chu)芯(xin)(xin)(xin)片(pian)(pian)(pian)(pian)組(zu)610和(he)第(di)(di)四(si)存(cun)儲(chu)(chu)芯(xin)(xin)(xin)片(pian)(pian)(pian)(pian)組(zu)710，其中，第(di)(di)四(si)存(cun)儲(chu)(chu)芯(xin)(xin)(xin)片(pian)(pian)(pian)(pian)組(zu)710、第(di)(di)三存(cun)儲(chu)(chu)芯(xin)(xin)(xin)片(pian)(pian)(pian)(pian)組(zu)610、第(di)(di)二存(cun)儲(chu)(chu)芯(xin)(xin)(xin)片(pian)(pian)(pian)(pian)組(zu)510和(he)第(di)(di)一(yi)存(cun)儲(chu)(chu)芯(xin)(xin)(xin)片(pian)(pian)(pian)(pian)組(zu)310自(zi)下而上依次堆疊。

第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)組(zu)310、第(di)(di)(di)(di)(di)(di)二(er)(er)存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)組(zu)510、第(di)(di)(di)(di)(di)(di)三存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)組(zu)610和(he)第(di)(di)(di)(di)(di)(di)四(si)存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)組(zu)710可以(yi)(yi)分(fen)別包(bao)括(kuo)兩(liang)(liang)個、三個或者四(si)個存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)。本實施例以(yi)(yi)每(mei)個存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)組(zu)包(bao)括(kuo)兩(liang)(liang)個存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)為例進行說(shuo)明。第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)110包(bao)括(kuo)第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)主(zhu)動(dong)面以(yi)(yi)及設置(zhi)在(zai)(zai)第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)主(zhu)動(dong)面上的(de)第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)焊盤(pan)，在(zai)(zai)所(suo)述第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)焊盤(pan)內(nei)設置(zhi)有第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)110的(de)層(ceng)內(nei)導電(dian)柱(zhu)122；第(di)(di)(di)(di)(di)(di)二(er)(er)存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)210包(bao)括(kuo)第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)主(zhu)動(dong)面以(yi)(yi)及設置(zhi)在(zai)(zai)第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)主(zhu)動(dong)面上的(de)第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)焊盤(pan)，在(zai)(zai)所(suo)述第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)焊盤(pan)內(nei)設置(zhi)有第(di)(di)(di)(di)(di)(di)二(er)(er)存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)210的(de)層(ceng)內(nei)導電(dian)柱(zhu)222。具體的(de)，第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)110和(he)第(di)(di)(di)(di)(di)(di)二(er)(er)存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)210的(de)空(kong)間取向(xiang)一(yi)(yi)(yi)(yi)致，即兩(liang)(liang)個存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)的(de)第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)主(zhu)動(dong)面的(de)朝向(xiang)相(xiang)同(tong)，因(yin)此(ci)層(ceng)內(nei)導電(dian)柱(zhu)122和(he)222的(de)朝向(xiang)也相(xiang)同(tong)。可選的(de)，第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)110、第(di)(di)(di)(di)(di)(di)二(er)(er)存(cun)(cun)(cun)(cun)儲(chu)(chu)(chu)(chu)芯(xin)(xin)(xin)(xin)片(pian)210、第(di)(di)(di)(di)(di)(di)一(yi)(yi)(yi)(yi)層(ceng)內(nei)導電(dian)柱(zhu)122和(he)222可以(yi)(yi)理解為一(yi)(yi)(yi)(yi)個一(yi)(yi)(yi)(yi)體結構。

進一(yi)步(bu)的(de)(de)(de)，第(di)(di)(di)(di)(di)一(yi)存(cun)儲(chu)(chu)芯(xin)片(pian)(pian)(pian)(pian)組(zu)310還(huan)(huan)可(ke)(ke)(ke)以包(bao)(bao)(bao)括位(wei)(wei)于(yu)(yu)第(di)(di)(di)(di)(di)一(yi)存(cun)儲(chu)(chu)芯(xin)片(pian)(pian)(pian)(pian)110下(xia)(xia)(xia)(xia)(xia)(xia)方(fang)的(de)(de)(de)復(fu)合(he)(he)(he)(he)(he)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)，該(gai)復(fu)合(he)(he)(he)(he)(he)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)包(bao)(bao)(bao)括上(shang)(shang)(shang)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)405、下(xia)(xia)(xia)(xia)(xia)(xia)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)401以及(ji)位(wei)(wei)于(yu)(yu)上(shang)(shang)(shang)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)405和(he)(he)下(xia)(xia)(xia)(xia)(xia)(xia)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)401之(zhi)(zhi)間的(de)(de)(de)重布(bu)(bu)線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)403；第(di)(di)(di)(di)(di)二(er)存(cun)儲(chu)(chu)芯(xin)片(pian)(pian)(pian)(pian)組(zu)510還(huan)(huan)可(ke)(ke)(ke)以包(bao)(bao)(bao)括位(wei)(wei)于(yu)(yu)第(di)(di)(di)(di)(di)二(er)存(cun)儲(chu)(chu)芯(xin)片(pian)(pian)(pian)(pian)210下(xia)(xia)(xia)(xia)(xia)(xia)方(fang)的(de)(de)(de)復(fu)合(he)(he)(he)(he)(he)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)，第(di)(di)(di)(di)(di)二(er)存(cun)儲(chu)(chu)芯(xin)片(pian)(pian)(pian)(pian)組(zu)510的(de)(de)(de)復(fu)合(he)(he)(he)(he)(he)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)包(bao)(bao)(bao)括上(shang)(shang)(shang)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)505、下(xia)(xia)(xia)(xia)(xia)(xia)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)501以及(ji)位(wei)(wei)于(yu)(yu)上(shang)(shang)(shang)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)505和(he)(he)下(xia)(xia)(xia)(xia)(xia)(xia)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)501之(zhi)(zhi)間的(de)(de)(de)重布(bu)(bu)線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)503；第(di)(di)(di)(di)(di)三(san)存(cun)儲(chu)(chu)芯(xin)片(pian)(pian)(pian)(pian)組(zu)610還(huan)(huan)可(ke)(ke)(ke)以包(bao)(bao)(bao)括位(wei)(wei)于(yu)(yu)第(di)(di)(di)(di)(di)二(er)存(cun)儲(chu)(chu)芯(xin)片(pian)(pian)(pian)(pian)210下(xia)(xia)(xia)(xia)(xia)(xia)方(fang)的(de)(de)(de)復(fu)合(he)(he)(he)(he)(he)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)，第(di)(di)(di)(di)(di)三(san)存(cun)儲(chu)(chu)芯(xin)片(pian)(pian)(pian)(pian)組(zu)610的(de)(de)(de)復(fu)合(he)(he)(he)(he)(he)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)包(bao)(bao)(bao)括上(shang)(shang)(shang)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)605、下(xia)(xia)(xia)(xia)(xia)(xia)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)601以及(ji)位(wei)(wei)于(yu)(yu)上(shang)(shang)(shang)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)605和(he)(he)下(xia)(xia)(xia)(xia)(xia)(xia)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)601之(zhi)(zhi)間的(de)(de)(de)重布(bu)(bu)線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)603；第(di)(di)(di)(di)(di)四(si)存(cun)儲(chu)(chu)芯(xin)片(pian)(pian)(pian)(pian)組(zu)710還(huan)(huan)可(ke)(ke)(ke)以包(bao)(bao)(bao)括位(wei)(wei)于(yu)(yu)第(di)(di)(di)(di)(di)二(er)存(cun)儲(chu)(chu)芯(xin)片(pian)(pian)(pian)(pian)210下(xia)(xia)(xia)(xia)(xia)(xia)方(fang)的(de)(de)(de)復(fu)合(he)(he)(he)(he)(he)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)，第(di)(di)(di)(di)(di)四(si)存(cun)儲(chu)(chu)芯(xin)片(pian)(pian)(pian)(pian)組(zu)710的(de)(de)(de)復(fu)合(he)(he)(he)(he)(he)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)包(bao)(bao)(bao)括上(shang)(shang)(shang)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)705、下(xia)(xia)(xia)(xia)(xia)(xia)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)701以及(ji)位(wei)(wei)于(yu)(yu)上(shang)(shang)(shang)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)705和(he)(he)下(xia)(xia)(xia)(xia)(xia)(xia)部(bu)(bu)(bu)絕(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)(jue)緣(yuan)(yuan)(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)701之(zhi)(zhi)間的(de)(de)(de)重布(bu)(bu)線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)703。

可選的(de)，第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)存儲芯(xin)片(pian)(pian)組(zu)310中(zhong)(zhong)(zhong)(zhong)的(de)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)內(nei)(nei)導(dao)電(dian)(dian)(dian)柱(zhu)(zhu)(zhu)(zhu)(zhu)122和222可以通(tong)(tong)過(guo)(guo)(guo)下(xia)部(bu)絕(jue)緣(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)401中(zhong)(zhong)(zhong)(zhong)的(de)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)通(tong)(tong)孔(kong)(kong)與(yu)(yu)重(zhong)(zhong)(zhong)布線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)403電(dian)(dian)(dian)連(lian)接(jie)，重(zhong)(zhong)(zhong)布線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)403通(tong)(tong)過(guo)(guo)(guo)上(shang)部(bu)絕(jue)緣(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)405中(zhong)(zhong)(zhong)(zhong)的(de)第(di)(di)(di)二(er)通(tong)(tong)孔(kong)(kong)與(yu)(yu)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)間(jian)導(dao)電(dian)(dian)(dian)柱(zhu)(zhu)(zhu)(zhu)(zhu)407電(dian)(dian)(dian)連(lian)接(jie)；第(di)(di)(di)二(er)存儲芯(xin)片(pian)(pian)組(zu)510中(zhong)(zhong)(zhong)(zhong)的(de)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)內(nei)(nei)導(dao)電(dian)(dian)(dian)柱(zhu)(zhu)(zhu)(zhu)(zhu)122和222可以通(tong)(tong)過(guo)(guo)(guo)下(xia)部(bu)絕(jue)緣(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)501中(zhong)(zhong)(zhong)(zhong)的(de)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)通(tong)(tong)孔(kong)(kong)與(yu)(yu)重(zhong)(zhong)(zhong)布線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)503電(dian)(dian)(dian)連(lian)接(jie)，層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)間(jian)導(dao)電(dian)(dian)(dian)柱(zhu)(zhu)(zhu)(zhu)(zhu)407通(tong)(tong)過(guo)(guo)(guo)下(xia)部(bu)絕(jue)緣(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)501中(zhong)(zhong)(zhong)(zhong)的(de)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)通(tong)(tong)孔(kong)(kong)與(yu)(yu)重(zhong)(zhong)(zhong)布線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)503電(dian)(dian)(dian)連(lian)接(jie)，重(zhong)(zhong)(zhong)布線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)503通(tong)(tong)過(guo)(guo)(guo)上(shang)部(bu)絕(jue)緣(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)505中(zhong)(zhong)(zhong)(zhong)的(de)第(di)(di)(di)二(er)通(tong)(tong)孔(kong)(kong)與(yu)(yu)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)間(jian)導(dao)電(dian)(dian)(dian)柱(zhu)(zhu)(zhu)(zhu)(zhu)507電(dian)(dian)(dian)連(lian)接(jie)；第(di)(di)(di)三存儲芯(xin)片(pian)(pian)組(zu)610中(zhong)(zhong)(zhong)(zhong)的(de)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)內(nei)(nei)導(dao)電(dian)(dian)(dian)柱(zhu)(zhu)(zhu)(zhu)(zhu)122和222可以通(tong)(tong)過(guo)(guo)(guo)下(xia)部(bu)絕(jue)緣(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)601中(zhong)(zhong)(zhong)(zhong)的(de)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)通(tong)(tong)孔(kong)(kong)與(yu)(yu)重(zhong)(zhong)(zhong)布線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)603電(dian)(dian)(dian)連(lian)接(jie)，層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)間(jian)導(dao)電(dian)(dian)(dian)柱(zhu)(zhu)(zhu)(zhu)(zhu)507通(tong)(tong)過(guo)(guo)(guo)下(xia)部(bu)絕(jue)緣(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)601中(zhong)(zhong)(zhong)(zhong)的(de)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)通(tong)(tong)孔(kong)(kong)與(yu)(yu)重(zhong)(zhong)(zhong)布線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)603電(dian)(dian)(dian)連(lian)接(jie)，重(zhong)(zhong)(zhong)布線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)603通(tong)(tong)過(guo)(guo)(guo)上(shang)部(bu)絕(jue)緣(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)605中(zhong)(zhong)(zhong)(zhong)的(de)第(di)(di)(di)二(er)通(tong)(tong)孔(kong)(kong)與(yu)(yu)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)間(jian)導(dao)電(dian)(dian)(dian)柱(zhu)(zhu)(zhu)(zhu)(zhu)607電(dian)(dian)(dian)連(lian)接(jie)；第(di)(di)(di)四存儲芯(xin)片(pian)(pian)組(zu)710中(zhong)(zhong)(zhong)(zhong)的(de)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)內(nei)(nei)導(dao)電(dian)(dian)(dian)柱(zhu)(zhu)(zhu)(zhu)(zhu)122和222可以通(tong)(tong)過(guo)(guo)(guo)下(xia)部(bu)絕(jue)緣(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)701中(zhong)(zhong)(zhong)(zhong)的(de)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)通(tong)(tong)孔(kong)(kong)與(yu)(yu)重(zhong)(zhong)(zhong)布線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)703電(dian)(dian)(dian)連(lian)接(jie)，層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)間(jian)導(dao)電(dian)(dian)(dian)柱(zhu)(zhu)(zhu)(zhu)(zhu)607通(tong)(tong)過(guo)(guo)(guo)下(xia)部(bu)絕(jue)緣(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)701中(zhong)(zhong)(zhong)(zhong)的(de)第(di)(di)(di)一(yi)(yi)(yi)(yi)(yi)通(tong)(tong)孔(kong)(kong)與(yu)(yu)重(zhong)(zhong)(zhong)布線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)703電(dian)(dian)(dian)連(lian)接(jie)，重(zhong)(zhong)(zhong)布線(xian)(xian)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)703通(tong)(tong)過(guo)(guo)(guo)上(shang)部(bu)絕(jue)緣(yuan)(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)705中(zhong)(zhong)(zhong)(zhong)的(de)第(di)(di)(di)二(er)通(tong)(tong)孔(kong)(kong)對外連(lian)接(jie)凸塊907電(dian)(dian)(dian)連(lian)接(jie)。

第(di)(di)一存(cun)(cun)儲(chu)(chu)芯(xin)片(pian)(pian)組(zu)(zu)310中(zhong)(zhong)的(de)(de)(de)(de)層(ceng)(ceng)(ceng)內(nei)導(dao)電(dian)(dian)柱(zhu)122和(he)(he)(he)222可(ke)以錯(cuo)開(kai)預設(she)角度(du)，以分別與(yu)(yu)第(di)(di)一存(cun)(cun)儲(chu)(chu)芯(xin)片(pian)(pian)組(zu)(zu)310中(zhong)(zhong)的(de)(de)(de)(de)重布(bu)(bu)(bu)線(xian)層(ceng)(ceng)(ceng)403電(dian)(dian)連(lian)(lian)接(jie)(jie)；第(di)(di)二存(cun)(cun)儲(chu)(chu)芯(xin)片(pian)(pian)組(zu)(zu)510中(zhong)(zhong)的(de)(de)(de)(de)層(ceng)(ceng)(ceng)內(nei)導(dao)電(dian)(dian)柱(zhu)122和(he)(he)(he)222同樣(yang)可(ke)以錯(cuo)開(kai)預設(she)角度(du)，以分別與(yu)(yu)第(di)(di)二存(cun)(cun)儲(chu)(chu)芯(xin)片(pian)(pian)組(zu)(zu)510中(zhong)(zhong)的(de)(de)(de)(de)重布(bu)(bu)(bu)線(xian)層(ceng)(ceng)(ceng)503電(dian)(dian)連(lian)(lian)接(jie)(jie)；第(di)(di)三存(cun)(cun)儲(chu)(chu)芯(xin)片(pian)(pian)組(zu)(zu)610中(zhong)(zhong)的(de)(de)(de)(de)層(ceng)(ceng)(ceng)內(nei)導(dao)電(dian)(dian)柱(zhu)122和(he)(he)(he)222可(ke)以錯(cuo)開(kai)預設(she)角度(du)，以分別與(yu)(yu)第(di)(di)三存(cun)(cun)儲(chu)(chu)芯(xin)片(pian)(pian)組(zu)(zu)610中(zhong)(zhong)的(de)(de)(de)(de)重布(bu)(bu)(bu)線(xian)層(ceng)(ceng)(ceng)603電(dian)(dian)連(lian)(lian)接(jie)(jie)；第(di)(di)四(si)存(cun)(cun)儲(chu)(chu)芯(xin)片(pian)(pian)組(zu)(zu)710中(zhong)(zhong)的(de)(de)(de)(de)層(ceng)(ceng)(ceng)內(nei)導(dao)電(dian)(dian)柱(zhu)122和(he)(he)(he)222可(ke)以錯(cuo)開(kai)預設(she)角度(du)，以分別與(yu)(yu)第(di)(di)四(si)存(cun)(cun)儲(chu)(chu)芯(xin)片(pian)(pian)組(zu)(zu)710中(zhong)(zhong)的(de)(de)(de)(de)重布(bu)(bu)(bu)線(xian)層(ceng)(ceng)(ceng)703電(dian)(dian)連(lian)(lian)接(jie)(jie)。可(ke)選的(de)(de)(de)(de)，所述預設(she)角度(du)可(ke)以為180°、90°或(huo)者(zhe)45°。需要說明的(de)(de)(de)(de)是，存(cun)(cun)儲(chu)(chu)芯(xin)片(pian)(pian)組(zu)(zu)中(zhong)(zhong)的(de)(de)(de)(de)層(ceng)(ceng)(ceng)內(nei)導(dao)電(dian)(dian)柱(zhu)可(ke)以錯(cuo)開(kai)0°以外的(de)(de)(de)(de)任意角度(du)，只(zhi)要保證層(ceng)(ceng)(ceng)內(nei)導(dao)電(dian)(dian)柱(zhu)不重合疊加(jia)即可(ke)，優選的(de)(de)(de)(de)是錯(cuo)開(kai)180°、90°或(huo)者(zhe)45°。

可(ke)(ke)選的，所述存(cun)(cun)(cun)儲(chu)(chu)器還可(ke)(ke)以包括對外(wai)連(lian)(lian)接(jie)(jie)凸塊(kuai)907，當第四(si)(si)存(cun)(cun)(cun)儲(chu)(chu)芯片(pian)組(zu)710位于最下(xia)方時，第四(si)(si)存(cun)(cun)(cun)儲(chu)(chu)芯片(pian)組(zu)710的重布線(xian)層703與對外(wai)連(lian)(lian)接(jie)(jie)凸塊(kuai)907電(dian)連(lian)(lian)接(jie)(jie)。進一(yi)步(bu)的，所述存(cun)(cun)(cun)儲(chu)(chu)器還可(ke)(ke)以包括凸塊(kuai)下(xia)金屬807，第四(si)(si)存(cun)(cun)(cun)儲(chu)(chu)芯片(pian)組(zu)710的重布線(xian)層703通過(guo)凸塊(kuai)下(xia)金屬807與外(wai)連(lian)(lian)接(jie)(jie)凸塊(kuai)907電(dian)連(lian)(lian)接(jie)(jie)。

需要(yao)說明(ming)的是，圖4所示的存儲(chu)器(qi)(qi)只是作為本發明(ming)實(shi)施例(li)提供的存儲(chu)器(qi)(qi)的一種實(shi)例(li)說明(ming)，本發明(ming)實(shi)施例(li)提供的存儲(chu)器(qi)(qi)中，存儲(chu)芯片組還可以是兩個(ge)、三個(ge)或(huo)者多個(ge)，以實(shi)現存儲(chu)器(qi)(qi)的大容量、高集成度。

可選的，上部絕緣(yuan)層和下部絕緣(yuan)層為有機光敏(min)材料制成(cheng)。

可選(xuan)的(de)，存儲(chu)(chu)芯片組(zu)內(nei)的(de)至少兩個存儲(chu)(chu)芯片由熱固材(cai)料(liao)包(bao)封為一體結構，302、502、602和702為固封層。

可(ke)選的，第一存儲芯片組310頂部(bu)可(ke)以設置(zhi)有保護膜909。

本發明實(shi)施例提(ti)供的(de)(de)(de)半導(dao)(dao)體存(cun)(cun)儲(chu)器(qi)，將擁有層(ceng)內(nei)導(dao)(dao)電柱(zhu)的(de)(de)(de)存(cun)(cun)儲(chu)芯(xin)片(pian)(pian)組(zu)兩(liang)兩(liang)疊(die)(die)加，這(zhe)樣在進行三維晶(jing)圓級存(cun)(cun)儲(chu)器(qi)堆疊(die)(die)時，可以降低(di)由于制作(zuo)工(gong)藝(yi)多次循環造成(cheng)的(de)(de)(de)可靠性風(feng)險(xian)；每(mei)堆疊(die)(die)一層(ceng)，將實(shi)際堆疊(die)(die)兩(liang)個芯(xin)片(pian)(pian)，這(zhe)樣在堆疊(die)(die)芯(xin)片(pian)(pian)層(ceng)數不(bu)變時，堆疊(die)(die)芯(xin)片(pian)(pian)數將翻倍(bei)(bei)，因此堆疊(die)(die)效率提(ti)高一倍(bei)(bei)，減(jian)低(di)生(sheng)產成(cheng)本；對(dui)芯(xin)片(pian)(pian)間(jian)隙的(de)(de)(de)填(tian)(tian)充(chong)和(he)包覆(fu)，采(cai)用成(cheng)本低(di)廉的(de)(de)(de)熱固材(cai)料(liao)，并免(mian)去使用光刻等工(gong)藝(yi)，生(sheng)產成(cheng)本下降；在堆疊(die)(die)第(di)二存(cun)(cun)儲(chu)芯(xin)片(pian)(pian)組(zu)時，首先制作(zuo)層(ceng)間(jian)導(dao)(dao)電柱(zhu)實(shi)現電互連，后進行存(cun)(cun)儲(chu)芯(xin)片(pian)(pian)放置和(he)存(cun)(cun)儲(chu)芯(xin)片(pian)(pian)間(jian)介電質填(tian)(tian)充(chong)和(he)包覆(fu)的(de)(de)(de)方法，解決了激光鉆孔對(dui)節距限制的(de)(de)(de)困(kun)難(nan)，從而滿足大容量存(cun)(cun)儲(chu)器(qi)制造對(dui)超細節距的(de)(de)(de)要求。

本發明實施例還提供一種半導(dao)(dao)體存儲(chu)器的(de)(de)制(zhi)作方(fang)法，包括(kuo)在載板自下而上(shang)(shang)依次(ci)制(zhi)作至少兩(liang)個(ge)存儲(chu)芯片組，以及制(zhi)作層間導(dao)(dao)電(dian)柱，所述層間導(dao)(dao)電(dian)柱分別與上(shang)(shang)下相鄰(lin)的(de)(de)兩(liang)個(ge)所述存儲(chu)芯片組的(de)(de)重布線層電(dian)連接，且位(wei)于最上(shang)(shang)方(fang)的(de)(de)存儲(chu)芯片組的(de)(de)重布線層與對外連接凸塊(kuai)電(dian)連接。

下面按照工(gong)程(cheng)中制作(zuo)存儲芯片組(zu)、層(ceng)(ceng)間導(dao)電柱、層(ceng)(ceng)內導(dao)電柱以及復合絕緣層(ceng)(ceng)的順序進(jin)行說(shuo)明(ming)，本(ben)發明(ming)實施(shi)例以四個存儲芯片組(zu)為例進(jin)行說(shuo)明(ming)。

首先，提(ti)供一(yi)載板(ban)(ban)300，載板(ban)(ban)300的(de)材料可(ke)為金屬、硅、玻璃以(yi)(yi)及有機(ji)基板(ban)(ban)等。載板(ban)(ban)300的(de)幾何形(xing)(xing)狀可(ke)以(yi)(yi)為圓形(xing)(xing)或(huo)者(zhe)方(fang)形(xing)(xing)。在(zai)(zai)清洗后的(de)載板(ban)(ban)300邊緣上制作用于(yu)芯片貼片位置(zhi)的(de)對(dui)準(zhun)標記，如圖5所示(shi)。對(dui)準(zhun)標記的(de)制作一(yi)般通過薄膜沉積(ji)技術實現(xian)，例如：離(li)子濺射(she)、光刻(ke)、顯(xian)影以(yi)(yi)及蝕刻(ke)，也(ye)可(ke)通過激(ji)光蝕刻(ke)、絲網印(yin)刷、圖形(xing)(xing)電鍍以(yi)(yi)及機(ji)械精(jing)加工(gong)等實現(xian)。本發明實施例提(ti)供的(de)存儲(chu)器(qi)的(de)制作方(fang)法一(yi)次(ci)(ci)可(ke)以(yi)(yi)形(xing)(xing)成多(duo)個(ge)存儲(chu)器(qi)，將多(duo)個(ge)存儲(chu)器(qi)切割即得到(dao)單個(ge)存儲(chu)器(qi)。再次(ci)(ci)對(dui)載板(ban)(ban)300進(jin)行清洗后在(zai)(zai)載板(ban)(ban)300上涂(tu)(tu)覆(fu)臨時(shi)鍵(jian)合(he)膠301。臨時(shi)鍵(jian)合(he)膠301的(de)涂(tu)(tu)覆(fu)可(ke)使用旋(xuan)涂(tu)(tu)、噴涂(tu)(tu)、滾壓、印(yin)刷、非旋(xuan)轉涂(tu)(tu)覆(fu)、熱壓、真空(kong)壓合(he)以(yi)(yi)及壓力貼合(he)等方(fang)式(shi)。臨時(shi)鍵(jian)合(he)膠301可(ke)以(yi)(yi)為有機(ji)材料或(huo)復合(he)材料。

在載(zai)板300上(shang)制作存(cun)儲(chu)(chu)芯(xin)片(pian)組，具體可以為(wei)：首先制作存(cun)儲(chu)(chu)芯(xin)片(pian)組中的(de)存(cun)儲(chu)(chu)芯(xin)片(pian)，本發(fa)明(ming)實施例以兩個存(cun)儲(chu)(chu)芯(xin)片(pian)為(wei)例進行介紹。

其中在(zai)制作(zuo)任一存儲芯片組時，包(bao)括如下步驟：

將至少(shao)兩個存儲芯(xin)片(pian)依次堆疊，上述至少(shao)兩個存儲芯(xin)片(pian)的層內導電柱錯開(kai)預設角度；

將(jiang)上(shang)述至少兩個存儲芯片包封為一體結構，且將(jiang)層內導(dao)電(dian)柱露出；

在上述一體(ti)結構上方(fang)形(xing)成復(fu)(fu)合(he)絕緣層(ceng)，復(fu)(fu)合(he)絕緣層(ceng)中形(xing)成有重(zhong)布(bu)線(xian)層(ceng)，該(gai)重(zhong)布(bu)線(xian)層(ceng)與(yu)層(ceng)內導電柱電連接。

如(ru)(ru)圖6所示，存儲器晶圓100有第一(yi)存儲芯(xin)(xin)片(pian)110的(de)陣列(lie)排布。第一(yi)存儲芯(xin)(xin)片(pian)110具(ju)有主動(dong)面(mian)110a和(he)非主動(dong)面(mian)110b，在主動(dong)面(mian)110a上(shang)(shang)，有第一(yi)存儲芯(xin)(xin)片(pian)110對(dui)外(wai)連接(jie)導(dao)(dao)電(dian)(dian)的(de)焊盤121，在焊盤121上(shang)(shang)，有預先沉(chen)積(ji)的(de)層(ceng)內(nei)(nei)導(dao)(dao)電(dian)(dian)柱(zhu)122。層(ceng)內(nei)(nei)導(dao)(dao)電(dian)(dian)柱(zhu)122的(de)沉(chen)積(ji)可(ke)采用不同(tong)方法實現，例如(ru)(ru)真空沉(chen)積(ji)和(he)電(dian)(dian)鍍(du)等(deng)(deng)。焊盤121可(ke)為(wei)(wei)單層(ceng)或(huo)(huo)多層(ceng)金屬(shu)，如(ru)(ru)Ti，W，Al，Cu，Ni，Pt，Ag，Au或(huo)(huo)其合(he)金等(deng)(deng)，層(ceng)內(nei)(nei)導(dao)(dao)電(dian)(dian)柱(zhu)122的(de)材料為(wei)(wei)金屬(shu)，如(ru)(ru)Cu，Ni，Ag，Au或(huo)(huo)其合(he)金等(deng)(deng)。層(ceng)內(nei)(nei)導(dao)(dao)電(dian)(dian)柱(zhu)122的(de)高度(du)在70～90μm左右。第一(yi)存儲芯(xin)(xin)片(pian)110的(de)厚度(du)為(wei)(wei)40～50μm。在晶圓100的(de)背(bei)面(mian)(對(dui)應第一(yi)存儲芯(xin)(xin)片(pian)110的(de)非主動(dong)面(mian))上(shang)(shang)，沉(chen)積(ji)DAF膜(mo)101。它的(de)沉(chen)積(ji)可(ke)以(yi)多種方式(shi)實現：如(ru)(ru)旋(xuan)涂、噴涂、印刷、滾壓以(yi)及熱壓等(deng)(deng)。DAF膜(mo)101的(de)有效粘接(jie)層(ceng)的(de)厚度(du)在10～30μm左右。DAF膜(mo)101為(wei)(wei)有機材料。

如(ru)圖7所示，存儲(chu)(chu)(chu)(chu)(chu)器晶(jing)圓(yuan)200有(you)(you)第二(er)(er)存儲(chu)(chu)(chu)(chu)(chu)芯(xin)片(pian)210的(de)(de)(de)陣列(lie)排布。第二(er)(er)存儲(chu)(chu)(chu)(chu)(chu)芯(xin)片(pian)210與(yu)第一(yi)存儲(chu)(chu)(chu)(chu)(chu)芯(xin)片(pian)110可(ke)(ke)為(wei)同(tong)(tong)一(yi)類型存儲(chu)(chu)(chu)(chu)(chu)器，也(ye)可(ke)(ke)為(wei)不同(tong)(tong)類型存儲(chu)(chu)(chu)(chu)(chu)器。第二(er)(er)存儲(chu)(chu)(chu)(chu)(chu)芯(xin)片(pian)210具有(you)(you)主動面(mian)210a和(he)非主動面(mian)210b，在(zai)(zai)主動面(mian)210a上(shang)，有(you)(you)第二(er)(er)存儲(chu)(chu)(chu)(chu)(chu)芯(xin)片(pian)210對外連接(jie)導電的(de)(de)(de)焊盤(pan)(pan)221。在(zai)(zai)焊盤(pan)(pan)221上(shang)，有(you)(you)預先沉(chen)積(ji)的(de)(de)(de)層(ceng)內導電連接(jie)柱222。層(ceng)內導電柱222的(de)(de)(de)沉(chen)積(ji)可(ke)(ke)采用不同(tong)(tong)方(fang)法實現(xian)(xian)，例如(ru)真空沉(chen)積(ji)和(he)電鍍等。焊盤(pan)(pan)221可(ke)(ke)為(wei)單層(ceng)或(huo)(huo)多(duo)層(ceng)金(jin)屬(shu)，如(ru)Ti，W，Al，Cu，Ni，Pt，Ag，Au或(huo)(huo)其合金(jin)等，層(ceng)內導電柱222的(de)(de)(de)材(cai)料為(wei)金(jin)屬(shu)，如(ru)Cu，Ni，Ag，Au或(huo)(huo)其合金(jin)等。層(ceng)內導電柱222的(de)(de)(de)高度(du)在(zai)(zai)20～40μm左右。第二(er)(er)存儲(chu)(chu)(chu)(chu)(chu)芯(xin)片(pian)210的(de)(de)(de)厚(hou)度(du)為(wei)40～50μm。在(zai)(zai)晶(jing)圓(yuan)200的(de)(de)(de)背面(mian)(對應第二(er)(er)存儲(chu)(chu)(chu)(chu)(chu)芯(xin)片(pian)210的(de)(de)(de)非主動面(mian)210b)上(shang)，沉(chen)積(ji)DAF膜(mo)(mo)201。它的(de)(de)(de)沉(chen)積(ji)可(ke)(ke)以多(duo)種(zhong)方(fang)式實現(xian)(xian)：如(ru)旋涂、噴(pen)涂、印刷、滾壓以及熱壓等。DAF膜(mo)(mo)201的(de)(de)(de)有(you)(you)效粘接(jie)層(ceng)的(de)(de)(de)厚(hou)度(du)在(zai)(zai)10～30μm左右，DAF膜(mo)(mo)201為(wei)有(you)(you)機材(cai)料，DAF膜(mo)(mo)201與(yu)DAF膜(mo)(mo)101可(ke)(ke)為(wei)同(tong)(tong)一(yi)種(zhong)DAF膜(mo)(mo)，也(ye)可(ke)(ke)為(wei)不同(tong)(tong)的(de)(de)(de)DAF膜(mo)(mo)。

如圖8a和圖8b所示(shi)，對上(shang)述兩個半導(dao)體(ti)存(cun)儲(chu)器晶(jing)圓(yuan)分(fen)別進行切(qie)割(ge)，得到第一存(cun)儲(chu)芯片(pian)110和第二存(cun)儲(chu)芯片(pian)210。可(ke)選的(de)，切(qie)割(ge)采取標準(zhun)半導(dao)體(ti)晶(jing)圓(yuan)切(qie)割(ge)方法，如機械(xie)切(qie)割(ge)或者激光(guang)切(qie)割(ge)等方式。

如圖9a，圖9b和圖9c所(suo)示，在載(zai)板300上，用半導(dao)體(ti)貼(tie)(tie)片(pian)(pian)(pian)(pian)設(she)備(bei)(bei)將第(di)一(yi)(yi)(yi)(yi)(yi)存(cun)(cun)(cun)(cun)儲(chu)芯(xin)(xin)片(pian)(pian)(pian)(pian)110的(de)(de)(de)主(zhu)(zhu)動(dong)(dong)面(mian)朝上，以(yi)所(suo)謂的(de)(de)(de)“Chip-to-Wafer”的(de)(de)(de)方(fang)式，貼(tie)(tie)到載(zai)板300上臨時鍵合(he)膠301的(de)(de)(de)上表(biao)面(mian)，實(shi)現第(di)一(yi)(yi)(yi)(yi)(yi)存(cun)(cun)(cun)(cun)儲(chu)芯(xin)(xin)片(pian)(pian)(pian)(pian)110在載(zai)板上的(de)(de)(de)再配(pei)置。類似(si)地(di)(di)，用半導(dao)體(ti)貼(tie)(tie)片(pian)(pian)(pian)(pian)設(she)備(bei)(bei)將第(di)二存(cun)(cun)(cun)(cun)儲(chu)芯(xin)(xin)片(pian)(pian)(pian)(pian)210的(de)(de)(de)主(zhu)(zhu)動(dong)(dong)面(mian)朝上，以(yi)所(suo)謂“Chip-to-Chip”的(de)(de)(de)方(fang)式，分別置放(fang)到第(di)一(yi)(yi)(yi)(yi)(yi)存(cun)(cun)(cun)(cun)儲(chu)芯(xin)(xin)片(pian)(pian)(pian)(pian)110的(de)(de)(de)主(zhu)(zhu)動(dong)(dong)面(mian)上，形成一(yi)(yi)(yi)(yi)(yi)體(ti)結(jie)構(gou)，該一(yi)(yi)(yi)(yi)(yi)體(ti)結(jie)構(gou)可以(yi)形象地(di)(di)理解為一(yi)(yi)(yi)(yi)(yi)個“超級芯(xin)(xin)片(pian)(pian)(pian)(pian)”。置放(fang)第(di)二存(cun)(cun)(cun)(cun)儲(chu)芯(xin)(xin)片(pian)(pian)(pian)(pian)210時，第(di)二存(cun)(cun)(cun)(cun)儲(chu)芯(xin)(xin)片(pian)(pian)(pian)(pian)210與(yu)第(di)一(yi)(yi)(yi)(yi)(yi)存(cun)(cun)(cun)(cun)儲(chu)芯(xin)(xin)片(pian)(pian)(pian)(pian)110有(you)一(yi)(yi)(yi)(yi)(yi)個位置上的(de)(de)(de)錯開(kai)以(yi)露出第(di)一(yi)(yi)(yi)(yi)(yi)存(cun)(cun)(cun)(cun)儲(chu)芯(xin)(xin)片(pian)(pian)(pian)(pian)110主(zhu)(zhu)動(dong)(dong)面(mian)上的(de)(de)(de)第(di)一(yi)(yi)(yi)(yi)(yi)層內導(dao)電(dian)柱122。通過這(zhe)樣(yang)的(de)(de)(de)置放(fang)，也實(shi)現了(le)第(di)二存(cun)(cun)(cun)(cun)儲(chu)芯(xin)(xin)片(pian)(pian)(pian)(pian)210在載(zai)板300上的(de)(de)(de)再重(zhong)置。將貼(tie)(tie)完一(yi)(yi)(yi)(yi)(yi)體(ti)結(jie)構(gou)的(de)(de)(de)載(zai)板置于一(yi)(yi)(yi)(yi)(yi)個具有(you)一(yi)(yi)(yi)(yi)(yi)定高(gao)壓的(de)(de)(de)烘箱里。加壓以(yi)排擠出滯(zhi)留于各(ge)貼(tie)(tie)片(pian)(pian)(pian)(pian)界面(mian)的(de)(de)(de)氣泡，確(que)保貼(tie)(tie)片(pian)(pian)(pian)(pian)界面(mian)的(de)(de)(de)完整性(xing)，同時對DAF材料進行預固化處理。

如(ru)圖10所示，沉(chen)積(ji)介質(zhi)(zhi)材(cai)(cai)料(liao)對(dui)包含一(yi)體結構(gou)的(de)載(zai)板進行固封(feng)，形成固封(feng)層302，即填充包覆一(yi)體結構(gou)的(de)空隙和表面。固封(feng)層302的(de)高度應比一(yi)體結構(gou)中的(de)第一(yi)層內(nei)導電(dian)柱高。沉(chen)積(ji)方(fang)法可為旋涂，印刷，有機疊層或(huo)者塑封(feng)等。介質(zhi)(zhi)材(cai)(cai)料(liao)一(yi)般為有機熱(re)固材(cai)(cai)料(liao)，但并(bing)不排除為絕緣非有機材(cai)(cai)料(liao)。

如圖(tu)11所示，對固封層302進行(xing)減薄處(chu)理，減薄直到一(yi)(yi)體(ti)(ti)結構上(shang)所有的層內導電柱表面露出。減薄方法采用半導體(ti)(ti)制造(zao)的標準磨拋技術。此時，固封介質材料表面離(li)一(yi)(yi)體(ti)(ti)結構最上(shang)端表面，即第二(er)存儲(chu)芯片210的主動面210a的距離(li)為(wei)20μm左右。

在一體結構上(shang)方形成(cheng)復(fu)合絕緣層可(ke)以(yi)包括：

在一體(ti)結構上方形成下部絕緣(yuan)層，以及在下部絕緣(yuan)層上形成第一通孔；

在下部絕緣(yuan)層上(shang)方形成重(zhong)(zhong)布線(xian)層，重(zhong)(zhong)布線(xian)層通過第一通孔與所述層內(nei)導電柱(zhu)電連接；

在(zai)所述重(zhong)布線層上(shang)(shang)方(fang)形(xing)成(cheng)上(shang)(shang)部絕緣層。

具體的(de)(de)工(gong)程上的(de)(de)方法如下：如圖12所示(shi)，在固封層302的(de)(de)上表(biao)面沉積(ji)可光(guang)(guang)刻的(de)(de)下部絕(jue)緣層401。下部絕(jue)緣層401的(de)(de)材料包(bao)括感光(guang)(guang)樹(shu)脂(zhi)和可以通(tong)過干法刻蝕(shi)等工(gong)藝形(xing)成圖形(xing)的(de)(de)樹(shu)脂(zhi)，例如聚酰亞胺、感光(guang)(guang)型(xing)環氧樹(shu)脂(zhi)、雙苯(ben)環丁(ding)烯樹(shu)脂(zhi)以及苯(ben)基(ji)并二惡唑樹(shu)脂(zhi)中的(de)(de)一種(zhong)或者多種(zhong)，下部絕(jue)緣層401的(de)(de)厚度為5～7μm。

采用(yong)半導(dao)體(ti)器(qi)件晶圓制(zhi)作(zuo)的標準工(gong)藝，對下部絕緣層401進行圖形制(zhi)作(zuo)，形成第一(yi)通(tong)孔，且(qie)第一(yi)通(tong)孔直至一(yi)體(ti)結(jie)構中各(ge)(ge)層內導(dao)電(dian)柱的表面，以(yi)露出(chu)各(ge)(ge)層內導(dao)電(dian)柱(圖中未示出(chu))。

如(ru)圖13所示(shi)，采用(yong)標準半導(dao)體(ti)制(zhi)作工藝(yi)，在下(xia)部絕(jue)緣層(ceng)401上制(zhi)作重(zhong)布(bu)線層(ceng)403。該過程包含一(yi)系列的薄(bo)膜沉積、電(dian)鍍、光刻、顯影以及蝕刻等(deng)工藝(yi)制(zhi)作。重(zhong)布(bu)線層(ceng)403一(yi)邊的終端經下(xia)部絕(jue)緣層(ceng)401上的第一(yi)通孔與一(yi)體(ti)結(jie)構中的層(ceng)內導(dao)電(dian)柱122和222相連，以引出第一(yi)存儲(chu)芯片110和第二存儲(chu)芯片210的電(dian)連接(jie)。重(zhong)布(bu)線層(ceng)403的材料可以為金屬材料，如(ru)Al、Au、Cr、Ni、Cu、Mo、Ti、Ta、Ni-Cr、W等(deng)及其(qi)合金。

如圖14所示，在重布線層(ceng)403及下部絕(jue)(jue)緣(yuan)層(ceng)401上(shang)制作可光刻的(de)上(shang)部絕(jue)(jue)緣(yuan)層(ceng)405，以形成(cheng)存儲芯(xin)片組310。上(shang)部絕(jue)(jue)緣(yuan)層(ceng)405的(de)材(cai)料(liao)包括(kuo)感光樹脂和可以通過(guo)干法刻蝕(shi)等工藝形成(cheng)圖形的(de)樹脂，例如聚酰亞胺、感光型環氧(yang)樹脂、雙苯(ben)環丁烯樹脂、苯(ben)基并二惡唑樹脂中(zhong)的(de)一(yi)種或者多種。上(shang)部絕(jue)(jue)緣(yuan)層(ceng)405的(de)厚度為5～7μm。

采用半(ban)(ban)導體器件晶圓制作的標準工藝(yi)，對上部絕(jue)緣(yuan)層405進行(xing)圖形(xing)制作，形(xing)成第二通孔(kong)，且該第二通孔(kong)直(zhi)至重(zhong)布線層403各相應端面，使其(qi)露出(chu)。上部絕(jue)緣(yuan)層405圖形(xing)制作可采用標準半(ban)(ban)導體的前道(dao)或(huo)中道(dao)工藝(yi)，如通過(guo)曝光、顯(xian)影、濕法或(huo)干法刻蝕等工藝(yi)。

形(xing)成(cheng)上(shang)部(bu)絕(jue)緣層(ceng)(ceng)之后，在所(suo)述上(shang)部(bu)絕(jue)緣層(ceng)(ceng)上(shang)形(xing)成(cheng)層(ceng)(ceng)間導(dao)電柱，所(suo)述層(ceng)(ceng)間導(dao)電柱用于連(lian)接相鄰的(de)兩個存儲芯片(pian)組。

具體(ti)(ti)(ti)的(de)(de)(de)，如(ru)圖15所(suo)示，在(zai)上(shang)部絕(jue)緣(yuan)層(ceng)(ceng)405上(shang)，采用(yong)半(ban)(ban)導(dao)(dao)(dao)體(ti)(ti)(ti)晶圓制(zhi)(zhi)作(zuo)(zuo)(zuo)的(de)(de)(de)標準(zhun)工藝，制(zhi)(zhi)作(zuo)(zuo)(zuo)一(yi)體(ti)(ti)(ti)結構的(de)(de)(de)層(ceng)(ceng)間(jian)(jian)導(dao)(dao)(dao)電(dian)(dian)(dian)柱(zhu)407。層(ceng)(ceng)間(jian)(jian)導(dao)(dao)(dao)電(dian)(dian)(dian)柱(zhu)407的(de)(de)(de)一(yi)端通過上(shang)部絕(jue)緣(yuan)層(ceng)(ceng)405的(de)(de)(de)第二通孔(kong)，與重布線層(ceng)(ceng)403各相(xiang)應端面(mian)(mian)連接。層(ceng)(ceng)間(jian)(jian)導(dao)(dao)(dao)電(dian)(dian)(dian)柱(zhu)407另一(yi)端的(de)(de)(de)高度應比上(shang)部絕(jue)緣(yuan)層(ceng)(ceng)405的(de)(de)(de)表面(mian)(mian)高出100～120μm左右。層(ceng)(ceng)間(jian)(jian)導(dao)(dao)(dao)電(dian)(dian)(dian)柱(zhu)407的(de)(de)(de)制(zhi)(zhi)作(zuo)(zuo)(zuo)可采用(yong)半(ban)(ban)導(dao)(dao)(dao)體(ti)(ti)(ti)制(zhi)(zhi)作(zuo)(zuo)(zuo)標準(zhun)技術實現，如(ru)真空沉積、電(dian)(dian)(dian)鍍(du)以及(ji)化(hua)學鍍(du)等(deng)。層(ceng)(ceng)間(jian)(jian)導(dao)(dao)(dao)電(dian)(dian)(dian)柱(zhu)407為金屬(shu)材(cai)料，如(ru)Cu、Ni、Pd、Ag、Au或其(qi)合金等(deng)。本發明實施例提供的(de)(de)(de)層(ceng)(ceng)間(jian)(jian)導(dao)(dao)(dao)電(dian)(dian)(dian)柱(zhu)的(de)(de)(de)制(zhi)(zhi)作(zuo)(zuo)(zuo)方法，在(zai)形成的(de)(de)(de)復合絕(jue)緣(yuan)層(ceng)(ceng)上(shang)方首先(xian)先(xian)制(zhi)(zhi)作(zuo)(zuo)(zuo)層(ceng)(ceng)間(jian)(jian)導(dao)(dao)(dao)電(dian)(dian)(dian)柱(zhu)，然后制(zhi)(zhi)作(zuo)(zuo)(zuo)一(yi)體(ti)(ti)(ti)結構和(he)一(yi)體(ti)(ti)(ti)結構的(de)(de)(de)介(jie)電(dian)(dian)(dian)質填充，并且可以采用(yong)低廉的(de)(de)(de)熱固(gu)材(cai)料作(zuo)(zuo)(zuo)為填充的(de)(de)(de)介(jie)電(dian)(dian)(dian)質，而(er)不是昂貴的(de)(de)(de)厚層(ceng)(ceng)光敏介(jie)電(dian)(dian)(dian)材(cai)料，進(jin)而(er)免去在(zai)固(gu)封(feng)層(ceng)(ceng)使用(yong)光刻等(deng)工藝，生產成本下(xia)降；同時由于不需(xu)要(yao)對(dui)固(gu)封(feng)材(cai)料進(jin)行激光鉆(zhan)孔(kong)，也(ye)解決(jue)了激光鉆(zhan)孔(kong)對(dui)節(jie)距限制(zhi)(zhi)的(de)(de)(de)困(kun)難，從(cong)而(er)滿足(zu)大容量傳(chuan)感(gan)器制(zhi)(zhi)作(zuo)(zuo)(zuo)對(dui)超(chao)細節(jie)距的(de)(de)(de)要(yao)求。

至此，完成一個存(cun)儲芯片組的制作。

下面，對另一(yi)個(ge)存(cun)儲(chu)芯片組的制備進(jin)行說明(ming)：

如圖16所示(shi)，用半導(dao)體貼片(pian)(pian)(pian)設(she)(she)備將上(shang)(shang)述的(de)(de)一(yi)(yi)體結構(gou)的(de)(de)主動(dong)面(mian)(mian)朝(chao)上(shang)(shang)，根據設(she)(she)計位(wei)置，以所謂的(de)(de)“Chip-to-Wafer”的(de)(de)方式，繼續貼到(dao)載板300上(shang)(shang)的(de)(de)第(di)一(yi)(yi)上(shang)(shang)部(bu)絕(jue)緣層405上(shang)(shang)。需要說明的(de)(de)是，每(mei)個存儲(chu)芯(xin)片(pian)(pian)(pian)組中的(de)(de)一(yi)(yi)體結構(gou)可以相同，即包括第(di)一(yi)(yi)存儲(chu)芯(xin)片(pian)(pian)(pian)110、第(di)二存儲(chu)芯(xin)片(pian)(pian)(pian)120以及(ji)位(wei)于第(di)一(yi)(yi)存儲(chu)芯(xin)片(pian)(pian)(pian)110主動(dong)面(mian)(mian)上(shang)(shang)的(de)(de)層內導(dao)電柱122和位(wei)于第(di)二存儲(chu)芯(xin)片(pian)(pian)(pian)120主動(dong)面(mian)(mian)上(shang)(shang)的(de)(de)層內導(dao)電柱222。

如圖17所(suo)示，再次沉積(ji)介質材(cai)(cai)料(liao)(liao)對(dui)整個載板進行固(gu)(gu)封(feng)，形成固(gu)(gu)封(feng)層(ceng)502，即填充包覆一(yi)(yi)體結構(gou)的空隙和(he)表(biao)面。固(gu)(gu)封(feng)層(ceng)502的高度(du)應(ying)比一(yi)(yi)體結構(gou)中(zhong)的所(suo)有層(ceng)內(nei)導電柱及層(ceng)間導電柱407要(yao)高。沉積(ji)方法可(ke)為(wei)(wei)旋涂，印(yin)刷，有機疊層(ceng)和(he)塑封(feng)等。介質材(cai)(cai)料(liao)(liao)一(yi)(yi)般為(wei)(wei)有機熱固(gu)(gu)材(cai)(cai)料(liao)(liao)，但不排除為(wei)(wei)絕緣非(fei)有機材(cai)(cai)料(liao)(liao)。

如圖18所示，對(dui)固封(feng)(feng)層502進行減薄(bo)處(chu)理，減薄(bo)直到一體(ti)結構(gou)上(shang)的(de)層內導(dao)電柱(zhu)和層間導(dao)電柱(zhu)407表面(mian)(mian)露出。減薄(bo)方法采用半導(dao)體(ti)制造的(de)標準磨(mo)拋(pao)技術。磨(mo)拋(pao)后，固封(feng)(feng)層502上(shang)表面(mian)(mian)離一體(ti)結構(gou)上(shang)最上(shang)端表面(mian)(mian)的(de)距離為(wei)20μm左右。

如圖(tu)19所示，在(zai)固封層(ceng)502的(de)正面涂覆可光(guang)刻(ke)的(de)下部(bu)絕緣(yuan)層(ceng)501。下部(bu)絕緣(yuan)層(ceng)501的(de)材料包括(kuo)感光(guang)樹(shu)脂和可以通過(guo)干法刻(ke)蝕等工(gong)藝(yi)形(xing)成圖(tu)形(xing)的(de)樹(shu)脂，例如聚酰亞胺、感光(guang)型環氧樹(shu)脂、雙苯環丁烯樹(shu)脂、苯基并二(er)惡唑樹(shu)脂中(zhong)的(de)一種(zhong)或者多種(zhong)，下部(bu)絕緣(yuan)層(ceng)501的(de)厚度(du)為(wei)5～7μm。

采(cai)用(yong)半導(dao)體器件晶圓制(zhi)作(zuo)的標準工藝，對下部(bu)絕緣(yuan)層(ceng)501進行圖(tu)形制(zhi)作(zuo)，形成第(di)一通孔(kong)，且第(di)一通孔(kong)直至一體結構(gou)中各層(ceng)內導(dao)電(dian)柱(zhu)的表(biao)面(mian)，以露(lu)出各層(ceng)內導(dao)電(dian)柱(zhu)(圖(tu)中未(wei)示(shi)出)。

如圖(tu)20所示，采(cai)用標(biao)準半導(dao)體制(zhi)作(zuo)工藝，在下部(bu)絕緣層(ceng)(ceng)501上制(zhi)作(zuo)重(zhong)布(bu)線層(ceng)(ceng)503。該(gai)過程包含(han)一系列(lie)的(de)薄膜沉積、電(dian)鍍、光(guang)刻、顯影以(yi)及(ji)蝕刻等工藝制(zhi)作(zuo)。重(zhong)布(bu)線層(ceng)(ceng)503一邊的(de)終端經(jing)下部(bu)絕緣層(ceng)(ceng)501上的(de)第一通(tong)孔與(yu)一體結構中的(de)層(ceng)(ceng)內(nei)導(dao)電(dian)柱(zhu)相連(lian)，以(yi)引出第一存儲(chu)芯片(pian)110和第二存儲(chu)芯片(pian)210的(de)電(dian)連(lian)接。重(zhong)布(bu)線層(ceng)(ceng)503的(de)材(cai)料可以(yi)為金(jin)屬材(cai)料，如Al、Au、Cr、Ni、Cu、Mo、Ti、Ta、Ni-Cr、W等及(ji)其(qi)合金(jin)。

在(zai)重布線層(ceng)503及下部絕緣(yuan)(yuan)層(ceng)501上(shang)制作可光刻的(de)上(shang)部絕緣(yuan)(yuan)層(ceng)505，以形(xing)成第二層(ceng)存儲芯片組510。上(shang)部絕緣(yuan)(yuan)層(ceng)505的(de)材料包括感光樹(shu)脂(zhi)(zhi)和可以通過干(gan)法刻蝕等(deng)工藝形(xing)成圖形(xing)的(de)樹(shu)脂(zhi)(zhi)，例如(ru)聚酰亞胺(an)、感光型環氧樹(shu)脂(zhi)(zhi)、雙(shuang)苯環丁烯樹(shu)脂(zhi)(zhi)、苯基并(bing)二惡唑(zuo)樹(shu)脂(zhi)(zhi)中的(de)一種(zhong)或者多種(zhong)。上(shang)部絕緣(yuan)(yuan)層(ceng)505的(de)厚度為5～7μm。

采(cai)用(yong)半導(dao)體器(qi)件晶(jing)圓制作(zuo)的標準工藝，對上部(bu)絕(jue)緣(yuan)層(ceng)505進行(xing)圖(tu)形(xing)(xing)制作(zuo)，形(xing)(xing)成第二(er)通孔，且該第二(er)通孔直至重布線層(ceng)503各相應端面，使(shi)其露出。上部(bu)絕(jue)緣(yuan)層(ceng)505圖(tu)形(xing)(xing)制作(zuo)可采(cai)用(yong)標準半導(dao)體的前(qian)道或中道工藝，如通過曝(pu)光、顯影、濕(shi)法或干法刻(ke)蝕(shi)等工藝。

形(xing)成(cheng)上(shang)部絕(jue)(jue)緣層(ceng)之后，首先(xian)在所述上(shang)部絕(jue)(jue)緣層(ceng)上(shang)形(xing)成(cheng)層(ceng)間導(dao)(dao)電柱，所述層(ceng)間導(dao)(dao)電柱用于連接相鄰的兩個存儲(chu)芯片組。

具(ju)體(ti)地，如(ru)(ru)圖(tu)21所示，在(zai)上(shang)部絕(jue)(jue)緣(yuan)層(ceng)505上(shang)，采用(yong)半(ban)導(dao)(dao)體(ti)晶(jing)圓制(zhi)作(zuo)的(de)(de)(de)(de)標(biao)準工藝，制(zhi)作(zuo)一體(ti)結構的(de)(de)(de)(de)層(ceng)間導(dao)(dao)電(dian)(dian)柱(zhu)(zhu)(zhu)507。層(ceng)間導(dao)(dao)電(dian)(dian)柱(zhu)(zhu)(zhu)507的(de)(de)(de)(de)一端(duan)通(tong)(tong)過(guo)(guo)上(shang)部絕(jue)(jue)緣(yuan)層(ceng)505的(de)(de)(de)(de)第二通(tong)(tong)孔，與重(zhong)布(bu)線層(ceng)503各相應端(duan)面連(lian)接(jie)。層(ceng)間導(dao)(dao)電(dian)(dian)柱(zhu)(zhu)(zhu)507另一端(duan)的(de)(de)(de)(de)高度(du)應比上(shang)部絕(jue)(jue)緣(yuan)層(ceng)505的(de)(de)(de)(de)表面高出100～120μm左右。層(ceng)間導(dao)(dao)電(dian)(dian)柱(zhu)(zhu)(zhu)507的(de)(de)(de)(de)制(zhi)作(zuo)可采用(yong)半(ban)導(dao)(dao)體(ti)制(zhi)作(zuo)標(biao)準技術實(shi)現，如(ru)(ru)真空沉積、電(dian)(dian)鍍以及化(hua)學(xue)鍍等(deng)。這樣(yang)，一體(ti)結構中的(de)(de)(de)(de)各存儲芯片通(tong)(tong)過(guo)(guo)重(zhong)布(bu)線層(ceng)403和一體(ti)結構的(de)(de)(de)(de)層(ceng)導(dao)(dao)電(dian)(dian)柱(zhu)(zhu)(zhu)407一起(qi)實(shi)現了與外界(jie)的(de)(de)(de)(de)電(dian)(dian)連(lian)接(jie)。層(ceng)間導(dao)(dao)電(dian)(dian)柱(zhu)(zhu)(zhu)507與層(ceng)間導(dao)(dao)電(dian)(dian)柱(zhu)(zhu)(zhu)407一樣(yang)，為金(jin)屬材料，如(ru)(ru)，Cu、Ni、Pd、Ag、Au或其(qi)合(he)金(jin)等(deng)。

至此，完(wan)成第二(er)層存儲芯片(pian)組的制作。

綜上，本發明實(shi)施例描述的具有大容(rong)量存(cun)(cun)儲(chu)能力的存(cun)(cun)儲(chu)芯(xin)(xin)片(pian)(pian)(pian)組，在經歷了(le)兩(liang)大輪工藝(yi)循環后，形成了(le)兩(liang)層(ceng)(ceng)(ceng)“超(chao)級(ji)芯(xin)(xin)片(pian)(pian)(pian)”結構，實(shi)現了(le)四層(ceng)(ceng)(ceng)存(cun)(cun)儲(chu)芯(xin)(xin)片(pian)(pian)(pian)堆(dui)疊。下面(mian)的步驟基本上是(shi)重復以(yi)上的循環，繼續，直至完成四層(ceng)(ceng)(ceng)“超(chao)級(ji)芯(xin)(xin)片(pian)(pian)(pian)”結構(即實(shi)現八層(ceng)(ceng)(ceng)存(cun)(cun)儲(chu)芯(xin)(xin)片(pian)(pian)(pian)堆(dui)疊)，在這不(bu)予以(yi)詳述。

如圖22所(suo)示，310、510、610和(he)710為(wei)存(cun)儲芯(xin)(xin)片組；602和(he)702為(wei)介電質固封層；601和(he)701為(wei)下部(bu)絕緣層，701和(he)705為(wei)上部(bu)絕緣層；603和(he)703重布線層；507和(he)607為(wei)存(cun)儲芯(xin)(xin)片組的層間(jian)導電柱；705為(wei)絕緣鈍(dun)化(hua)層。

“超級芯(xin)(xin)片”間空隙(xi)填充(chong)，包(bao)(bao)覆介(jie)電(dian)(dian)質(zhi)的(de)(de)沉積方法(fa)(fa)可(ke)(ke)(ke)為(wei)旋涂(tu)，印(yin)刷，有(you)(you)機(ji)疊層(ceng)(ceng)(ceng)(laminate)或(huo)塑(su)封等(deng)。其(qi)材(cai)(cai)料(liao)(liao)(liao)(liao)性質(zhi)一般為(wei)有(you)(you)機(ji)熱固材(cai)(cai)料(liao)(liao)(liao)(liao)，但并不排除(chu)為(wei)絕緣(yuan)非有(you)(you)機(ji)材(cai)(cai)料(liao)(liao)(liao)(liao)。絕緣(yuan)介(jie)電(dian)(dian)質(zhi)的(de)(de)沉積可(ke)(ke)(ke)采用標(biao)(biao)準半導體(ti)的(de)(de)前道或(huo)中(zhong)道工藝(yi)(yi)，如(ru)(ru)通(tong)過(guo)曝光(guang)(guang)(guang)、顯影(ying)、濕法(fa)(fa)或(huo)干(gan)(gan)法(fa)(fa)刻(ke)蝕(shi)(shi)(shi)等(deng)工藝(yi)(yi)。絕緣(yuan)介(jie)電(dian)(dian)質(zhi)材(cai)(cai)料(liao)(liao)(liao)(liao)包(bao)(bao)括感光(guang)(guang)(guang)樹(shu)(shu)脂(zhi)(zhi)(zhi)(zhi)和可(ke)(ke)(ke)以通(tong)過(guo)干(gan)(gan)法(fa)(fa)刻(ke)蝕(shi)(shi)(shi)等(deng)工藝(yi)(yi)形成圖(tu)(tu)形的(de)(de)樹(shu)(shu)脂(zhi)(zhi)(zhi)(zhi)，例如(ru)(ru)聚酰亞(ya)胺、感光(guang)(guang)(guang)型環氧樹(shu)(shu)脂(zhi)(zhi)(zhi)(zhi)、BCB(雙苯環丁烯(xi)樹(shu)(shu)脂(zhi)(zhi)(zhi)(zhi))、PBO(苯基并二(er)惡唑(zuo)樹(shu)(shu)脂(zhi)(zhi)(zhi)(zhi))中(zhong)的(de)(de)一種或(huo)者(zhe)多(duo)(duo)種。RDL層(ceng)(ceng)(ceng)的(de)(de)制(zhi)作(zuo)包(bao)(bao)含一系列的(de)(de)薄(bo)膜沉積、電(dian)(dian)鍍(du)、光(guang)(guang)(guang)刻(ke)、顯影(ying)、蝕(shi)(shi)(shi)刻(ke)等(deng)工藝(yi)(yi)。RDL材(cai)(cai)料(liao)(liao)(liao)(liao)為(wei)金屬(shu)材(cai)(cai)料(liao)(liao)(liao)(liao)，如(ru)(ru)Al、Au、Cr、Ni、Cu、Mo、Ti、Ta、Ni-Cr、W等(deng)及其(qi)合金。“超級芯(xin)(xin)片”層(ceng)(ceng)(ceng)間導電(dian)(dian)柱(zhu)的(de)(de)制(zhi)作(zuo)可(ke)(ke)(ke)采用半導體(ti)制(zhi)作(zuo)標(biao)(biao)準技術實現，如(ru)(ru)，真空沉積，電(dian)(dian)鍍(du)，化(hua)學鍍(du)等(deng)。“超級芯(xin)(xin)片”層(ceng)(ceng)(ceng)間導電(dian)(dian)柱(zhu)為(wei)金屬(shu)材(cai)(cai)料(liao)(liao)(liao)(liao)，如(ru)(ru)Cu、Ni、Pd、Ag、Au或(huo)其(qi)合金等(deng)。絕緣(yuan)鈍化(hua)層(ceng)(ceng)(ceng)的(de)(de)制(zhi)作(zuo)采用標(biao)(biao)準半導體(ti)的(de)(de)前道或(huo)中(zhong)道工藝(yi)(yi)，如(ru)(ru)通(tong)過(guo)曝光(guang)(guang)(guang)、顯影(ying)、濕法(fa)(fa)或(huo)干(gan)(gan)法(fa)(fa)刻(ke)蝕(shi)(shi)(shi)等(deng)工藝(yi)(yi)。鈍化(hua)層(ceng)(ceng)(ceng)材(cai)(cai)料(liao)(liao)(liao)(liao)一般為(wei)有(you)(you)機(ji)材(cai)(cai)料(liao)(liao)(liao)(liao)，但不排除(chu)為(wei)無(wu)機(ji)材(cai)(cai)料(liao)(liao)(liao)(liao)。有(you)(you)機(ji)材(cai)(cai)料(liao)(liao)(liao)(liao)包(bao)(bao)括感光(guang)(guang)(guang)形成圖(tu)(tu)形的(de)(de)樹(shu)(shu)脂(zhi)(zhi)(zhi)(zhi)，例如(ru)(ru)聚酰亞(ya)胺、感光(guang)(guang)(guang)型環氧樹(shu)(shu)脂(zhi)(zhi)(zhi)(zhi)、阻焊油墨、綠漆(qi)、干(gan)(gan)膜、感光(guang)(guang)(guang)型增層(ceng)(ceng)(ceng)材(cai)(cai)料(liao)(liao)(liao)(liao)、BCB(雙苯環丁烯(xi)樹(shu)(shu)脂(zhi)(zhi)(zhi)(zhi))、PBO(苯基苯并二(er)惡唑(zuo)樹(shu)(shu)脂(zhi)(zhi)(zhi)(zhi))中(zhong)的(de)(de)一種或(huo)者(zhe)多(duo)(duo)種。

為完(wan)成(cheng)大容量存儲器件的制(zhi)(zhi)作，下(xia)面制(zhi)(zhi)作對外連接(jie)凸塊(kuai)。

采(cai)用半導體器件晶圓制作的標準工(gong)(gong)藝(yi)，對絕(jue)緣鈍化層705進行圖形制作，形成第二通(tong)孔，且該第二通(tong)孔直至重布線層703各相應端面(mian)，使其露出。絕(jue)緣鈍化層705圖形制作可采(cai)用標準半導體的前道或中道工(gong)(gong)藝(yi)，如通(tong)過(guo)曝光、顯影、濕法(fa)或干(gan)法(fa)刻蝕等(deng)工(gong)(gong)藝(yi)。

如圖23所示(shi)，在(zai)絕緣(yuan)鈍化(hua)層705的第(di)二通孔處(chu)制(zhi)作(zuo)凸塊(kuai)下金(jin)屬(shu)(shu)807，該凸塊(kuai)下金(jin)屬(shu)(shu)807與(yu)重布(bu)線層703各端(duan)面(mian)焊(han)(han)盤相連(lian)。凸塊(kuai)下金(jin)屬(shu)(shu)807的制(zhi)作(zuo)通過(guo)濺(jian)射、電(dian)鍍(du)(du)、真空(kong)蒸發(fa)沉積等工藝并輔以(yi)(yi)光(guang)刻、顯影、刻蝕等工藝實現(xian)。凸塊(kuai)下金(jin)屬(shu)(shu)的材料(liao)為(wei)與(yu)焊(han)(han)料(liao)Wetting(相親(qin)和)的金(jin)屬(shu)(shu)或合金(jin)，如Ni、Cu、Pt、Ag及(ji)其合金(jin)。隨后(hou)，在(zai)凸塊(kuai)下金(jin)屬(shu)(shu)807上制(zhi)作(zuo)對外(wai)連(lian)接(jie)凸塊(kuai)907。其制(zhi)作(zuo)可(ke)以(yi)(yi)通過(guo)電(dian)鍍(du)(du)、印(yin)刷、植(zhi)球(qiu)、放球(qiu)等工藝。然后(hou)再進行(xing)回流(liu)工藝。回流(liu)可(ke)以(yi)(yi)通過(guo)熱傳導、對流(liu)、輻射等實現(xian)。對外(wai)連(lian)接(jie)凸塊(kuai)907的材料(liao)主要為(wei)焊(han)(han)料(liao)金(jin)屬(shu)(shu)。如，Sn、Ag、Cu、Pb、Au、Ni、Zn、Mo、Ta、Bi、In、等及(ji)其合金(jin)。

如圖24所(suo)示(shi)，去除載(zai)板和臨時(shi)鍵合膠。載(zai)板和臨時(shi)鍵合膠可以(yi)通過機械、加熱、化學、激(ji)光(guang)等方式去除。然后(hou)，對整(zheng)個大(da)容(rong)量存儲器再(zai)購“晶圓”進行翻(fan)轉(Flip Over)，使第一存儲芯(xin)片組310中的(de)第一存儲芯(xin)片110的(de)非主動面(mian)110b和固封層302的(de)下表(biao)面(mian)處于最頂(ding)層表(biao)面(mian)。

如圖25所(suo)示，在第(di)一(yi)存儲(chu)芯片110的非主(zhu)動面(mian)110b及固封(feng)層302的下(xia)表面(mian)上沉積(ji)一(yi)層保(bao)護膜(mo)909。保(bao)護膜(mo)909的沉積(ji)可以有多種方式，如：旋涂、噴涂、印刷、滾壓、熱壓，或真空壓合，等。保(bao)護膜(mo)材料(liao)為有機材料(liao)。

如圖26所示(shi)，最后對所形成的大容量存儲器(qi)結構，進行分(fen)離(li)切割。

如圖(tu)27所示，經過以上工(gong)藝流程后得到單顆大容量半導體存儲器。

本發明實施(shi)例提(ti)供(gong)的(de)半導(dao)體存(cun)儲(chu)器的(de)制作方(fang)法，通過依次制作至少(shao)(shao)兩(liang)個存(cun)儲(chu)芯(xin)(xin)(xin)(xin)片(pian)組(zu)，以及制作層(ceng)(ceng)(ceng)間(jian)導(dao)電(dian)(dian)柱(zhu)，層(ceng)(ceng)(ceng)間(jian)導(dao)電(dian)(dian)柱(zhu)分別(bie)與上下相鄰的(de)兩(liang)個存(cun)儲(chu)芯(xin)(xin)(xin)(xin)片(pian)組(zu)的(de)重布(bu)(bu)線(xian)(xian)層(ceng)(ceng)(ceng)電(dian)(dian)連(lian)接，且位于最(zui)上方(fang)的(de)存(cun)儲(chu)芯(xin)(xin)(xin)(xin)片(pian)組(zu)的(de)重布(bu)(bu)線(xian)(xian)層(ceng)(ceng)(ceng)與對外連(lian)接凸塊電(dian)(dian)連(lian)接；其中任一(yi)存(cun)儲(chu)芯(xin)(xin)(xin)(xin)片(pian)組(zu)為(wei)至少(shao)(shao)兩(liang)個存(cun)儲(chu)芯(xin)(xin)(xin)(xin)片(pian)依次堆疊，至少(shao)(shao)兩(liang)個存(cun)儲(chu)芯(xin)(xin)(xin)(xin)片(pian)的(de)層(ceng)(ceng)(ceng)內導(dao)電(dian)(dian)柱(zhu)錯開預設角度(du)，并將至少(shao)(shao)兩(liang)個存(cun)儲(chu)芯(xin)(xin)(xin)(xin)片(pian)包封為(wei)一(yi)體結構，以及在一(yi)體結構上方(fang)形成(cheng)復(fu)(fu)合絕緣(yuan)層(ceng)(ceng)(ceng)，復(fu)(fu)合絕緣(yuan)層(ceng)(ceng)(ceng)中形成(cheng)有(you)重布(bu)(bu)線(xian)(xian)層(ceng)(ceng)(ceng)，重布(bu)(bu)線(xian)(xian)層(ceng)(ceng)(ceng)與層(ceng)(ceng)(ceng)內導(dao)電(dian)(dian)柱(zhu)電(dian)(dian)連(lian)接。采(cai)用上述技術方(fang)法，可(ke)以有(you)效提(ti)高存(cun)儲(chu)器的(de)堆疊效率，并且降低堆疊難度(du)。

注意，上述(shu)僅(jin)為(wei)本(ben)(ben)發明的(de)(de)較(jiao)佳(jia)實(shi)(shi)施(shi)(shi)例(li)及所運用技術原理(li)(li)。本(ben)(ben)領(ling)域(yu)技術人員(yuan)會理(li)(li)解，本(ben)(ben)發明不限于這里所述(shu)的(de)(de)特定(ding)實(shi)(shi)施(shi)(shi)例(li)，對本(ben)(ben)領(ling)域(yu)技術人員(yuan)來(lai)說能夠進(jin)行各種明顯的(de)(de)變化、重(zhong)新調整和替代而不會脫離(li)本(ben)(ben)發明的(de)(de)保護范圍(wei)(wei)。因(yin)此(ci)，雖然通過以(yi)(yi)上實(shi)(shi)施(shi)(shi)例(li)對本(ben)(ben)發明進(jin)行了較(jiao)為(wei)詳細(xi)的(de)(de)說明，但是(shi)本(ben)(ben)發明不僅(jin)僅(jin)限于以(yi)(yi)上實(shi)(shi)施(shi)(shi)例(li)，在不脫離(li)本(ben)(ben)發明構思的(de)(de)情(qing)況下，還可以(yi)(yi)包括更多其他等效(xiao)實(shi)(shi)施(shi)(shi)例(li)，而本(ben)(ben)發明的(de)(de)范圍(wei)(wei)由所附的(de)(de)權利(li)要求范圍(wei)(wei)決定(ding)。