本發(fa)明涉及半導體(ti)器(qi)件領(ling)域，特(te)別(bie)是涉及一種含有氮(dan)鎵(jia)鋁和氮(dan)鎵(jia)銦(yin)的緩存層(ceng)的半導體(ti)器(qi)件及其制(zhi)造方法。

背景技術：

Ⅲ族氮化物(wu)半導(dao)(dao)體(ti)材料(liao)被譽為是(shi)第三(san)代(dai)(dai)半導(dao)(dao)體(ti)材料(liao)，包括氮化鎵(jia)(GaN)、氮化鋁(AlN)、氮化銦(yin)(yin)(InN)以及他們之間形成的(de)三(san)、四元合金，如(ru)氮鎵(jia)鋁(AlGaN)、氮鋁銦(yin)(yin)(InAlN)和氮鎵(jia)銦(yin)(yin)(InGaN)。以氮化鎵(jia)(GaN)為主(zhu)的(de)Ⅲ族氮化物(wu)半導(dao)(dao)體(ti)材料(liao)具有寬的(de)直接代(dai)(dai)隙(Eg＝3.36eV)、高(gao)(gao)熔(rong)點(dian)、高(gao)(gao)熱導(dao)(dao)率、高(gao)(gao)飽和電子速(su)率、高(gao)(gao)臨界擊穿電場強度(du)和高(gao)(gao)電子室溫遷(qian)移率，被廣(guang)泛應用于(yu)金屬半導(dao)(dao)體(ti)場效(xiao)應晶體(ti)管(guan)(MESFET)、高(gao)(gao)電子遷(qian)移率晶體(ti)管(guan)(HEMT)、異質結場效(xiao)應晶體(ti)管(guan)(HFET)、發光二極管(guan)(LED)等耐高(gao)(gao)溫、高(gao)(gao)壓和高(gao)(gao)頻交換器件。

由于(yu)目前很難得(de)到(dao)大尺寸(cun)的(de)(de)氮(dan)(dan)化(hua)鎵(jia)單(dan)晶體材(cai)料(liao)(liao)，為(wei)了獲得(de)高(gao)質(zhi)量(liang)的(de)(de)氮(dan)(dan)化(hua)鎵(jia)薄(bo)膜，通(tong)過在硅(gui)(gui)、藍寶(bao)石或(huo)碳化(hua)硅(gui)(gui)等(deng)襯底(di)(di)材(cai)料(liao)(liao)上(shang)進行異質(zhi)外延生長(chang)。其(qi)中硅(gui)(gui)具(ju)有高(gao)質(zhi)量(liang)、價格低、易(yi)于(yu)解理和(he)制作電極(ji)等(deng)優勢，是(shi)最具(ju)有潛力的(de)(de)襯底(di)(di)材(cai)料(liao)(liao)。但是(shi)由于(yu)硅(gui)(gui)和(he)氮(dan)(dan)化(hua)鎵(jia)有較大的(de)(de)晶格失(shi)配和(he)熱失(shi)配，如氮(dan)(dan)化(hua)鎵(jia)與硅(gui)(gui)之間的(de)(de)熱失(shi)配為(wei)56％，晶格失(shi)配為(wei)19.6％，在硅(gui)(gui)襯底(di)(di)生長(chang)的(de)(de)氮(dan)(dan)化(hua)鎵(jia)外延層(ceng)(ceng)上(shang)會產生較多(duo)的(de)(de)位錯缺陷(xian)(xian)和(he)較大的(de)(de)內(nei)應力，而(er)這些缺陷(xian)(xian)會導致外延層(ceng)(ceng)生產裂紋，制約著高(gao)質(zhi)量(liang)的(de)(de)氮(dan)(dan)化(hua)鎵(jia)薄(bo)膜的(de)(de)生長(chang)。

為了更好的(de)(de)抑制氮(dan)化鎵層因應(ying)力產(chan)(chan)生的(de)(de)裂紋，提高其(qi)(qi)晶(jing)體(ti)質(zhi)量，在(zai)異質(zhi)外延生長中(zhong)通(tong)常包含(han)籽晶(jing)層和(he)緩(huan)(huan)沖層。傳統的(de)(de)半導(dao)體(ti)器件的(de)(de)緩(huan)(huan)存(cun)(cun)層在(zai)硅襯底氮(dan)化鋁(lv)(lv)籽晶(jing)層上部，形成(cheng)一定(ding)厚度(du)的(de)(de)氮(dan)鎵鋁(lv)(lv)緩(huan)(huan)沖層的(de)(de)結(jie)構。但是氮(dan)鎵鋁(lv)(lv)緩(huan)(huan)存(cun)(cun)層隨著厚度(du)的(de)(de)增加，會產(chan)(chan)生較多(duo)的(de)(de)位錯缺陷和(he)較大(da)的(de)(de)內應(ying)力，導(dao)致其(qi)(qi)上成(cheng)長的(de)(de)氮(dan)化鎵層的(de)(de)品質(zhi)低下。

技術實現要素：

基于此，有(you)必要(yao)針對氮鎵鋁(lv)緩(huan)存層隨著(zhu)厚(hou)度的(de)(de)增加，會產生較(jiao)多(duo)的(de)(de)位錯缺(que)陷和較(jiao)大的(de)(de)內(nei)應力的(de)(de)問題(ti)，提供一種含有(you)氮鎵鋁(lv)和氮鎵銦的(de)(de)緩(huan)存層的(de)(de)半導(dao)體器件(jian)及其制造方(fang)法。

一種含有氮鎵鋁(lv)和(he)氮鎵銦的(de)緩存層的(de)半導體(ti)器件，包(bao)括(kuo)：

襯底；

籽晶(jing)層(ceng)，所述(shu)籽晶(jing)層(ceng)設在所述(shu)襯底的(de)上部；

緩(huan)沖(chong)(chong)層，所(suo)述(shu)(shu)緩(huan)沖(chong)(chong)層設(she)置在(zai)所(suo)述(shu)(shu)籽(zi)晶層的上(shang)部(bu)，所(suo)述(shu)(shu)緩(huan)沖(chong)(chong)層包括(kuo)氮鎵(jia)鋁層和氮鎵(jia)銦層；以及

Ⅲ族氮化物外(wai)延(yan)層，所(suo)述Ⅲ族氮化物外(wai)延(yan)層設置在(zai)所(suo)述緩沖層的上部。

在其中一個實施例(li)中，所述緩沖(chong)層(ceng)(ceng)(ceng)包括單層(ceng)(ceng)(ceng)氮鎵鋁層(ceng)(ceng)(ceng)和單層(ceng)(ceng)(ceng)氮鎵銦(yin)層(ceng)(ceng)(ceng)。

在其中一個實施例中，所(suo)述(shu)氮(dan)鎵(jia)鋁(lv)層和/或氮(dan)鎵(jia)銦層為多層，且所(suo)述(shu)氮(dan)鎵(jia)銦層與所(suo)述(shu)氮(dan)鎵(jia)鋁(lv)層交替層疊。

在其(qi)中(zhong)(zhong)(zhong)(zhong)一(yi)個實施例(li)中(zhong)(zhong)(zhong)(zhong)，當所述氮鎵鋁層(ceng)(ceng)有多層(ceng)(ceng)時，所述緩存層(ceng)(ceng)中(zhong)(zhong)(zhong)(zhong)的(de)(de)(de)每一(yi)層(ceng)(ceng)氮鎵鋁層(ceng)(ceng)中(zhong)(zhong)(zhong)(zhong)鋁的(de)(de)(de)摻雜濃(nong)度是不同的(de)(de)(de)，所述氮鎵鋁層(ceng)(ceng)中(zhong)(zhong)(zhong)(zhong)鋁的(de)(de)(de)摻雜濃(nong)度小于等于1。

在(zai)其(qi)中一個實施例中，所述襯底(di)為藍寶(bao)石(shi)襯底(di)、硅襯底(di)或(huo)碳化(hua)硅襯底(di)。

在其中一個實施例中，所述籽晶層為氮化鋁(lv)層和/或氮鎵鋁(lv)層。

在其(qi)中(zhong)一(yi)個實(shi)施例中(zhong)，所(suo)述(shu)Ⅲ族氮(dan)(dan)化物外(wai)延(yan)(yan)層(ceng)(ceng)包(bao)括氮(dan)(dan)化鎵外(wai)延(yan)(yan)層(ceng)(ceng)及氮(dan)(dan)鎵鋁外(wai)延(yan)(yan)層(ceng)(ceng)中(zhong)的(de)至(zhi)少一(yi)層(ceng)(ceng)，且所(suo)述(shu)Ⅲ族氮(dan)(dan)化物外(wai)延(yan)(yan)層(ceng)(ceng)中(zhong)具有由氮(dan)(dan)化鎵外(wai)延(yan)(yan)層(ceng)(ceng)與氮(dan)(dan)鎵鋁外(wai)延(yan)(yan)層(ceng)(ceng)構(gou)成的(de)異質結構(gou)。

在其(qi)中(zhong)(zhong)一(yi)個實施例中(zhong)(zhong)，還(huan)包括(kuo)設置在所(suo)述(shu)Ⅲ族(zu)氮化物外延層(ceng)中(zhong)(zhong)間(jian)的氮化鋁插入層(ceng)和/或(huo)氮鎵鋁插入層(ceng)。

上(shang)述半導體器件，在(zai)籽(zi)晶(jing)層(ceng)(ceng)上(shang)部形(xing)成一個氮鎵鋁(lv)(lv)層(ceng)(ceng)與氮鎵銦層(ceng)(ceng)層(ceng)(ceng)疊設(she)置的緩(huan)沖(chong)層(ceng)(ceng)，通過(guo)變更鋁(lv)(lv)摻雜(za)濃度調整(zheng)緩(huan)沖(chong)層(ceng)(ceng)中(zhong)氮鎵鋁(lv)(lv)層(ceng)(ceng)的結(jie)構構造，有(you)效緩(huan)解Ⅲ族氮化物外(wai)延(yan)層(ceng)(ceng)與襯(chen)底之間的晶(jing)格失配(pei)和(he)熱失配(pei)，而且因(yin)為(wei)在(zai)緩(huan)沖(chong)層(ceng)(ceng)中(zhong)層(ceng)(ceng)疊設(she)置氮鎵銦層(ceng)(ceng)，使緩(huan)沖(chong)層(ceng)(ceng)中(zhong)生長的氮鎵鋁(lv)(lv)層(ceng)(ceng)處于壓應(ying)變狀態，抑制了氮鎵鋁(lv)(lv)層(ceng)(ceng)隨著厚度增加產生的較多(duo)的位錯(cuo)缺(que)陷(xian)和(he)較大的內應(ying)力，進而可以(yi)得到高(gao)質量的Ⅲ族氮化物外(wai)延(yan)層(ceng)(ceng)。

此外，還有必(bi)要提供(gong)一種含有氮鎵(jia)鋁和氮鎵(jia)銦的緩(huan)存層的半導體器(qi)件的制造方(fang)法。

一種含有氮(dan)鎵(jia)鋁(lv)和(he)氮(dan)鎵(jia)銦的(de)緩存層的(de)半導體器件的(de)制造方法，其(qi)特(te)征在于，所述制造方法包(bao)括以下(xia)步驟：

1)在襯底上形成包含硅(gui)摻(chan)雜氮化鋁層的籽晶層；

2)在所(suo)述(shu)籽晶(jing)層上形成緩沖層，所(suo)述(shu)緩沖層包括氮(dan)鎵鋁層和氮(dan)鎵銦層；

3)在所述緩(huan)沖層上形成Ⅲ族氮化物(wu)外延層。

在其中一個實(shi)施例中，其特征在于，還包括在所述Ⅲ族氮化物外(wai)延層中間(jian)形成(cheng)插入(ru)層的步驟。

通過該方法(fa)制(zhi)造的含有(you)氮鎵鋁和氮鎵銦的緩存(cun)層的半(ban)(ban)導體器(qi)件，具(ju)有(you)較高的高臨界(jie)擊穿電場(chang)強度和高電子(zi)室溫遷移率(lv)，半(ban)(ban)導體器(qi)件的工作性能較好。

附圖說明

圖(tu)1為一實施(shi)方式的(de)(de)含有(you)氮鎵(jia)鋁和氮鎵(jia)銦的(de)(de)緩存層(ceng)的(de)(de)半導體器件的(de)(de)結構示意圖(tu)；

圖2為一實施方式的(de)(de)含有氮鎵(jia)鋁(lv)和氮鎵(jia)銦的(de)(de)緩存層的(de)(de)半導體器件的(de)(de)緩沖層的(de)(de)結(jie)構示意圖。

具體實施方式

為了便(bian)于理(li)解(jie)本(ben)(ben)(ben)發(fa)(fa)(fa)明(ming)，下面(mian)將(jiang)參(can)照相(xiang)關附圖對本(ben)(ben)(ben)發(fa)(fa)(fa)明(ming)的(de)(de)(de)含有硅摻雜氮(dan)化(hua)鋁(lv)層的(de)(de)(de)半導(dao)體器件及其制造(zao)方法(fa)進行更(geng)全面(mian)的(de)(de)(de)描(miao)述。附圖中給出了本(ben)(ben)(ben)發(fa)(fa)(fa)明(ming)的(de)(de)(de)較佳實施例。但是，本(ben)(ben)(ben)發(fa)(fa)(fa)明(ming)可以以許多不同的(de)(de)(de)形式來實現，并(bing)不限于本(ben)(ben)(ben)文所描(miao)述的(de)(de)(de)實施例。相(xiang)反地，提供這(zhe)些實施例的(de)(de)(de)目的(de)(de)(de)是使對本(ben)(ben)(ben)發(fa)(fa)(fa)明(ming)的(de)(de)(de)公開內容的(de)(de)(de)理(li)解(jie)更(geng)加透徹全面(mian)。

除(chu)非另有(you)定義(yi)(yi)，本(ben)文(wen)所使用(yong)的(de)(de)(de)(de)(de)(de)所有(you)的(de)(de)(de)(de)(de)(de)技術(shu)和科學術(shu)語與(yu)屬于本(ben)發明(ming)(ming)的(de)(de)(de)(de)(de)(de)技術(shu)領域的(de)(de)(de)(de)(de)(de)技術(shu)人員通常理(li)解的(de)(de)(de)(de)(de)(de)含義(yi)(yi)相(xiang)同。本(ben)文(wen)中(zhong)(zhong)在本(ben)發明(ming)(ming)的(de)(de)(de)(de)(de)(de)說明(ming)(ming)書(shu)中(zhong)(zhong)所使用(yong)的(de)(de)(de)(de)(de)(de)術(shu)語只是為了描述具體(ti)的(de)(de)(de)(de)(de)(de)實施例的(de)(de)(de)(de)(de)(de)目的(de)(de)(de)(de)(de)(de)，不是旨(zhi)在于限制本(ben)發明(ming)(ming)。本(ben)文(wen)所使用(yong)的(de)(de)(de)(de)(de)(de)術(shu)語“及/或”包括一個或多個相(xiang)關的(de)(de)(de)(de)(de)(de)所列(lie)項目的(de)(de)(de)(de)(de)(de)任意的(de)(de)(de)(de)(de)(de)和所有(you)的(de)(de)(de)(de)(de)(de)組合。

如圖1所示，一(yi)實施方式的半導體(ti)器件包括(kuo)襯底(di)101、籽晶層(ceng)102、緩沖層(ceng)103、第(di)一(yi)Ⅲ族氮化物(wu)外(wai)延(yan)層(ceng)104以及第(di)二Ⅲ族氮化物(wu)外(wai)延(yan)層(ceng)106。

在本(ben)實施(shi)方(fang)式(shi)中(zhong)，襯(chen)底(di)101的(de)材(cai)(cai)(cai)料選擇除(chu)了要考慮(lv)晶格失配度、材(cai)(cai)(cai)料的(de)熱膨(peng)脹系數，還(huan)要綜合考慮(lv)材(cai)(cai)(cai)料的(de)尺寸和(he)價格。在本(ben)實施(shi)方(fang)式(shi)中(zhong)，襯(chen)底(di)101的(de)材(cai)(cai)(cai)料選用硅。可以理(li)解(jie)，在其他實施(shi)方(fang)式(shi)中(zhong)，襯(chen)底(di)101的(de)材(cai)(cai)(cai)料還(huan)可以為藍寶石或(huo)碳化硅等。

籽晶層(ceng)(ceng)(ceng)102位于襯底(di)101的上表面，主要作用是在襯底(di)表面形(xing)成(cheng)成(cheng)核(he)(he)點，有利于Ⅲ族氮(dan)(dan)化(hua)物(wu)在襯底(di)上形(xing)核(he)(he)和(he)生長。在本實施(shi)方(fang)式中，籽晶層(ceng)(ceng)(ceng)102的材(cai)料是氮(dan)(dan)化(hua)鋁。籽晶層(ceng)(ceng)(ceng)102由一層(ceng)(ceng)(ceng)或(huo)(huo)多層(ceng)(ceng)(ceng)氮(dan)(dan)化(hua)鋁層(ceng)(ceng)(ceng)構(gou)造而成(cheng)。優(you)選的，籽晶層(ceng)(ceng)(ceng)102的厚(hou)度小于等于500nm。可以理(li)解，在其(qi)他實施(shi)方(fang)式中，籽晶層(ceng)(ceng)(ceng)102的材(cai)料是氮(dan)(dan)鎵鋁、氮(dan)(dan)化(hua)鎵、氮(dan)(dan)化(hua)硅(gui)等其(qi)他Ⅲ族氮(dan)(dan)化(hua)物(wu)，或(huo)(huo)幾者的組合。籽晶層(ceng)(ceng)(ceng)102是含有氮(dan)(dan)化(hua)鋁層(ceng)(ceng)(ceng)、氮(dan)(dan)化(hua)鎵層(ceng)(ceng)(ceng)、氮(dan)(dan)化(hua)硅(gui)層(ceng)(ceng)(ceng)等其(qi)他Ⅲ族氮(dan)(dan)化(hua)物(wu)層(ceng)(ceng)(ceng)構(gou)成(cheng)的一層(ceng)(ceng)(ceng)或(huo)(huo)多層(ceng)(ceng)(ceng)結構(gou)。

緩(huan)沖(chong)層(ceng)103位于(yu)籽(zi)晶層(ceng)102的(de)(de)(de)(de)上部，主要(yao)作用(yong)是有(you)效緩(huan)解Ⅲ族氮(dan)化(hua)(hua)(hua)物(wu)外(wai)延(yan)(yan)層(ceng)與襯底之間的(de)(de)(de)(de)晶格失配(pei)和熱失配(pei)，減少了Ⅲ族氮(dan)化(hua)(hua)(hua)物(wu)外(wai)延(yan)(yan)層(ceng)因應力產生的(de)(de)(de)(de)應變(bian)，降低位錯和缺陷的(de)(de)(de)(de)發生，進而形成較好的(de)(de)(de)(de)Ⅲ族氮(dan)化(hua)(hua)(hua)物(wu)外(wai)延(yan)(yan)層(ceng)。在本實(shi)施方(fang)式中(zhong)，緩(huan)沖(chong)層(ceng)103的(de)(de)(de)(de)材(cai)料是氮(dan)鎵銦和氮(dan)化(hua)(hua)(hua)鋁(lv)，其(qi)中(zhong)氮(dan)化(hua)(hua)(hua)鋁(lv)材(cai)料可以根據(ju)外(wai)延(yan)(yan)層(ceng)生長要(yao)求變(bian)更鋁(lv)摻雜濃度(鋁(lv)相對于(yu)氮(dan)化(hua)(hua)(hua)鋁(lv)層(ceng)的(de)(de)(de)(de)質量分數)。優選的(de)(de)(de)(de)，緩(huan)沖(chong)層(ceng)103的(de)(de)(de)(de)厚(hou)度小于(yu)等于(yu)5um。

如圖2所示，緩(huan)沖(chong)層(ceng)(ceng)(ceng)(ceng)(ceng)103為(wei)氮(dan)鎵(jia)(jia)(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)111與氮(dan)鎵(jia)(jia)(jia)(jia)銦層(ceng)(ceng)(ceng)(ceng)(ceng)112依次交替層(ceng)(ceng)(ceng)(ceng)(ceng)疊成(cheng)(cheng)長(chang)構成(cheng)(cheng)的(de)(de)(de)(de)超晶格層(ceng)(ceng)(ceng)(ceng)(ceng)結構。其(qi)中(zhong)(zhong)，緩(huan)沖(chong)層(ceng)(ceng)(ceng)(ceng)(ceng)103中(zhong)(zhong)第(di)(di)(di)二層(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)111中(zhong)(zhong)的(de)(de)(de)(de)鋁(lv)(lv)(lv)的(de)(de)(de)(de)摻(chan)(chan)雜(za)(za)濃(nong)度(du)(du)相(xiang)(xiang)對于第(di)(di)(di)一(yi)層(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)111中(zhong)(zhong)的(de)(de)(de)(de)鋁(lv)(lv)(lv)的(de)(de)(de)(de)摻(chan)(chan)雜(za)(za)濃(nong)度(du)(du)增(zeng)加15％，第(di)(di)(di)三層(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)111中(zhong)(zhong)的(de)(de)(de)(de)鋁(lv)(lv)(lv)的(de)(de)(de)(de)摻(chan)(chan)雜(za)(za)濃(nong)度(du)(du)相(xiang)(xiang)對于第(di)(di)(di)一(yi)層(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)111中(zhong)(zhong)的(de)(de)(de)(de)鋁(lv)(lv)(lv)的(de)(de)(de)(de)摻(chan)(chan)雜(za)(za)濃(nong)度(du)(du)增(zeng)加35％，第(di)(di)(di)三層(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)111中(zhong)(zhong)的(de)(de)(de)(de)鋁(lv)(lv)(lv)的(de)(de)(de)(de)摻(chan)(chan)雜(za)(za)濃(nong)度(du)(du)相(xiang)(xiang)對于第(di)(di)(di)一(yi)層(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)111中(zhong)(zhong)的(de)(de)(de)(de)鋁(lv)(lv)(lv)的(de)(de)(de)(de)摻(chan)(chan)雜(za)(za)濃(nong)度(du)(du)增(zeng)加60％。緩(huan)沖(chong)層(ceng)(ceng)(ceng)(ceng)(ceng)103中(zhong)(zhong)每一(yi)層(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)111中(zhong)(zhong)的(de)(de)(de)(de)鋁(lv)(lv)(lv)的(de)(de)(de)(de)摻(chan)(chan)雜(za)(za)濃(nong)度(du)(du)可以是不固定的(de)(de)(de)(de)，每一(yi)層(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)111中(zhong)(zhong)鋁(lv)(lv)(lv)的(de)(de)(de)(de)摻(chan)(chan)雜(za)(za)濃(nong)度(du)(du)的(de)(de)(de)(de)可以根據Ⅲ族氮(dan)化(hua)物(wu)外延層(ceng)(ceng)(ceng)(ceng)(ceng)的(de)(de)(de)(de)生長(chang)需求(qiu)進行調整，可以是不規律變化(hua)的(de)(de)(de)(de)。優選的(de)(de)(de)(de)，氮(dan)鎵(jia)(jia)(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)111中(zhong)(zhong)鋁(lv)(lv)(lv)的(de)(de)(de)(de)摻(chan)(chan)雜(za)(za)濃(nong)度(du)(du)不超過1。

可(ke)(ke)以(yi)理(li)解，在其(qi)他實(shi)施方式中，緩(huan)沖(chong)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)103可(ke)(ke)以(yi)是(shi)一(yi)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)111與(yu)一(yi)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)銦(yin)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)112構(gou)(gou)(gou)成(cheng)的(de)(de)(de)(de)兩(liang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)結(jie)構(gou)(gou)(gou)、兩(liang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)111與(yu)一(yi)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)銦(yin)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)112構(gou)(gou)(gou)成(cheng)的(de)(de)(de)(de)三(san)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)結(jie)構(gou)(gou)(gou)、一(yi)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)111與(yu)兩(liang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)銦(yin)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)112構(gou)(gou)(gou)成(cheng)的(de)(de)(de)(de)三(san)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)結(jie)構(gou)(gou)(gou)、兩(liang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)111與(yu)兩(liang)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)銦(yin)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)112構(gou)(gou)(gou)成(cheng)的(de)(de)(de)(de)四層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)結(jie)構(gou)(gou)(gou)等氮(dan)鎵(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)111與(yu)氮(dan)鎵(jia)(jia)銦(yin)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)112交替層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)疊成(cheng)長構(gou)(gou)(gou)成(cheng)的(de)(de)(de)(de)超(chao)(chao)晶格(ge)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)結(jie)構(gou)(gou)(gou)。其(qi)中，緩(huan)沖(chong)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)103中每一(yi)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)111中的(de)(de)(de)(de)鋁(lv)(lv)(lv)的(de)(de)(de)(de)摻雜(za)濃度可(ke)(ke)以(yi)是(shi)固(gu)定的(de)(de)(de)(de)，也(ye)可(ke)(ke)以(yi)是(shi)不固(gu)定的(de)(de)(de)(de)。每一(yi)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)氮(dan)鎵(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)111中鋁(lv)(lv)(lv)的(de)(de)(de)(de)摻雜(za)濃度可(ke)(ke)以(yi)根據Ⅲ族氮(dan)化物外(wai)延層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)的(de)(de)(de)(de)生長需求進行(xing)調(diao)整(zheng)，可(ke)(ke)以(yi)是(shi)規律(lv)變化的(de)(de)(de)(de)，也(ye)可(ke)(ke)以(yi)是(shi)不規律(lv)變化的(de)(de)(de)(de)。優選的(de)(de)(de)(de)，氮(dan)鎵(jia)(jia)鋁(lv)(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)111中鋁(lv)(lv)(lv)的(de)(de)(de)(de)摻雜(za)濃度不超(chao)(chao)過1。

Ⅲ族(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)物(wu)(wu)(wu)外(wai)(wai)延(yan)(yan)層(ceng)(ceng)由第(di)一(yi)(yi)Ⅲ族(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)物(wu)(wu)(wu)外(wai)(wai)延(yan)(yan)層(ceng)(ceng)104和第(di)二(er)Ⅲ族(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)物(wu)(wu)(wu)外(wai)(wai)延(yan)(yan)層(ceng)(ceng)106構成。第(di)一(yi)(yi)Ⅲ族(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)物(wu)(wu)(wu)外(wai)(wai)延(yan)(yan)層(ceng)(ceng)104位于緩沖層(ceng)(ceng)103的(de)(de)上(shang)部，第(di)二(er)Ⅲ族(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)物(wu)(wu)(wu)外(wai)(wai)延(yan)(yan)層(ceng)(ceng)106位于第(di)一(yi)(yi)Ⅲ族(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)物(wu)(wu)(wu)外(wai)(wai)延(yan)(yan)層(ceng)(ceng)104的(de)(de)上(shang)部。在本(ben)實施(shi)方式中，第(di)一(yi)(yi)Ⅲ族(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)物(wu)(wu)(wu)外(wai)(wai)延(yan)(yan)層(ceng)(ceng)104的(de)(de)材料(liao)是(shi)氮(dan)(dan)(dan)(dan)化(hua)(hua)鎵，第(di)二(er)Ⅲ族(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)物(wu)(wu)(wu)外(wai)(wai)延(yan)(yan)層(ceng)(ceng)106的(de)(de)材料(liao)是(shi)氮(dan)(dan)(dan)(dan)鎵鋁。

在氮(dan)(dan)化鎵外(wai)延層和氮(dan)(dan)鎵鋁(lv)外(wai)延層之間構成(cheng)一個氮(dan)(dan)鎵鋁(lv)/氮(dan)(dan)化鎵異(yi)質結(jie)構，氮(dan)(dan)鎵鋁(lv)/氮(dan)(dan)化鎵異(yi)質結(jie)構是半導體器件的(de)(de)核心(xin)部件。在氮(dan)(dan)鎵鋁(lv)/氮(dan)(dan)化鎵異(yi)質結(jie)構界(jie)面(mian)(mian)形(xing)(xing)成(cheng)三角(jiao)形(xing)(xing)勢阱，電子的(de)(de)德布(bu)羅意波(bo)長比(bi)勢阱的(de)(de)寬度大，垂直(zhi)于表(biao)(biao)面(mian)(mian)方(fang)向(xiang)(xiang)(xiang)上的(de)(de)能(neng)量將發生(sheng)量子化形(xing)(xing)成(cheng)子能(neng)帶，電子在垂直(zhi)表(biao)(biao)面(mian)(mian)方(fang)向(xiang)(xiang)(xiang)的(de)(de)運動喪失(shi)了自由(you)度，只(zhi)存在沿表(biao)(biao)面(mian)(mian)兩(liang)個方(fang)向(xiang)(xiang)(xiang)的(de)(de)自由(you)度，這些(xie)勢阱中(zhong)具有(you)很高的(de)(de)遷移速(su)度的(de)(de)電子即為(wei)二(er)維電子氣(2DEG)。

可以理解，在其他實施方(fang)式中，第(di)(di)一(yi)(yi)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)104的(de)(de)材料(liao)(liao)是(shi)氮(dan)(dan)(dan)(dan)嫁鋁或(huo)氮(dan)(dan)(dan)(dan)鎵(jia)(jia)銦等(deng)(deng)其他Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)，第(di)(di)二(er)(er)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)106的(de)(de)材料(liao)(liao)是(shi)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)鎵(jia)(jia)或(huo)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)銦等(deng)(deng)其他Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)。Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)為一(yi)(yi)層(ceng)(ceng)(ceng)(ceng)第(di)(di)一(yi)(yi)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)104與(yu)一(yi)(yi)層(ceng)(ceng)(ceng)(ceng)第(di)(di)二(er)(er)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)106構(gou)成(cheng)的(de)(de)兩(liang)層(ceng)(ceng)(ceng)(ceng)結(jie)構(gou)、兩(liang)層(ceng)(ceng)(ceng)(ceng)第(di)(di)一(yi)(yi)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)104與(yu)一(yi)(yi)層(ceng)(ceng)(ceng)(ceng)第(di)(di)二(er)(er)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)106構(gou)成(cheng)的(de)(de)三層(ceng)(ceng)(ceng)(ceng)結(jie)構(gou)、一(yi)(yi)層(ceng)(ceng)(ceng)(ceng)第(di)(di)一(yi)(yi)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)104與(yu)兩(liang)層(ceng)(ceng)(ceng)(ceng)第(di)(di)二(er)(er)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)106構(gou)成(cheng)的(de)(de)三層(ceng)(ceng)(ceng)(ceng)結(jie)構(gou)、兩(liang)層(ceng)(ceng)(ceng)(ceng)第(di)(di)一(yi)(yi)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)104與(yu)兩(liang)層(ceng)(ceng)(ceng)(ceng)第(di)(di)二(er)(er)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)106構(gou)成(cheng)的(de)(de)四層(ceng)(ceng)(ceng)(ceng)結(jie)構(gou)等(deng)(deng)包括第(di)(di)一(yi)(yi)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)104及(ji)第(di)(di)二(er)(er)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)106構(gou)成(cheng)的(de)(de)多層(ceng)(ceng)(ceng)(ceng)結(jie)構(gou)，且(qie)Ⅲ族(zu)(zu)(zu)(zu)氮(dan)(dan)(dan)(dan)化(hua)(hua)(hua)物(wu)外(wai)(wai)延(yan)(yan)(yan)層(ceng)(ceng)(ceng)(ceng)具有(you)至少一(yi)(yi)個異(yi)質結(jie)構(gou)。

優(you)(you)選的(de)，如圖1所示，在(zai)(zai)(zai)(zai)本(ben)實施方式(shi)中，在(zai)(zai)(zai)(zai)第一Ⅲ族氮(dan)化(hua)物(wu)外延(yan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)104的(de)中間(jian)還有插(cha)入(ru)(ru)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)105。插(cha)入(ru)(ru)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)105的(de)主要作用是(shi)使后續生長的(de)外延(yan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)處于壓(ya)應變狀態，減少外延(yan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)中的(de)應力和位(wei)錯，進(jin)而消(xiao)除外延(yan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)中的(de)裂紋，得到高質量無裂紋的(de)Ⅲ族氮(dan)化(hua)物(wu)外延(yan)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)。在(zai)(zai)(zai)(zai)本(ben)實施方式(shi)中，插(cha)入(ru)(ru)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)105的(de)材料是(shi)氮(dan)化(hua)鋁(lv)(lv)。優(you)(you)選的(de)，插(cha)入(ru)(ru)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)105的(de)厚(hou)度小(xiao)于等于100nm。插(cha)入(ru)(ru)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)105是(shi)氮(dan)化(hua)鋁(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)構成的(de)一層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)或多層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)結(jie)構。可以理解(jie)，在(zai)(zai)(zai)(zai)其他實施方式(shi)中，插(cha)入(ru)(ru)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)105的(de)材料是(shi)氮(dan)鎵鋁(lv)(lv)，插(cha)入(ru)(ru)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)可以是(shi)氮(dan)鎵鋁(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)構成的(de)一層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)或多層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)結(jie)構，也可以是(shi)氮(dan)化(hua)鋁(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)與氮(dan)鎵鋁(lv)(lv)層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)構成的(de)多層(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)(ceng)混合結(jie)構。

此外，本實(shi)施方(fang)(fang)式還提(ti)供(gong)了一種上(shang)述含有硅摻(chan)雜氮化鋁層(ceng)的半導體器件的制造方(fang)(fang)法(fa)，其具體包括(kuo)如下步驟：

步驟(zou)一：在(zai)提供的襯底(di)101上(shang)沉積(ji)形成含(han)有硅(gui)摻雜氮化鋁(lv)的籽晶層102。

在本實施方(fang)式中，在1000度以(yi)上的NH3氛圍中注入三(san)甲(jia)基(ji)鋁通過氣相外(wai)延生長(MOCDV)的方(fang)式形成籽晶層102。

在形成(cheng)籽晶層(ceng)102之前，還包含(han)用濕刻或者干刻蝕去除襯(chen)底(di)101的(de)自然氧化(hua)層(ceng)的(de)步驟。

步驟二：在籽晶層102上形成緩沖層103。

優選的(de)，緩沖層包(bao)括氮(dan)(dan)鎵(jia)鋁層和氮(dan)(dan)鎵(jia)銦(yin)層，所(suo)述(shu)氮(dan)(dan)鎵(jia)鋁層與所(suo)述(shu)氮(dan)(dan)鎵(jia)銦(yin)層層疊設(she)置。

步(bu)驟三：在緩(huan)沖層103上形成(cheng)成(cheng)核點，促(cu)進Ⅲ族氮化物的(de)島狀生長和小(xiao)島聯并，逐步(bu)形成(cheng)第(di)一Ⅲ族氮化物外延層104。

優選的(de)，在第(di)一Ⅲ族(zu)氮化(hua)(hua)物(wu)外延(yan)層104的(de)形(xing)成過程中，還包(bao)括在預(yu)(yu)先生長的(de)Ⅲ族(zu)氮化(hua)(hua)物(wu)層表面形(xing)成插入(ru)層105的(de)步驟，接著(zhu)在插入(ru)層105上繼續生長Ⅲ族(zu)氮化(hua)(hua)物(wu)以與預(yu)(yu)先生長的(de)Ⅲ族(zu)氮化(hua)(hua)物(wu)層形(xing)成第(di)一Ⅲ族(zu)氮化(hua)(hua)物(wu)外延(yan)層104。在第(di)一Ⅲ族(zu)氮化(hua)(hua)物(wu)外延(yan)層104中形(xing)成插入(ru)層105可以減少隨著(zhu)Ⅲ族(zu)氮化(hua)(hua)物(wu)層厚(hou)度增加產生的(de)內應力和位(wei)錯。

步驟四：在第一Ⅲ族氮(dan)化(hua)物(wu)外(wai)延層(ceng)104上(shang)形成第二Ⅲ族氮(dan)化(hua)物(wu)外(wai)延層(ceng)106，完成Ⅲ族氮(dan)化(hua)物(wu)外(wai)延層(ceng)的生長。

以上(shang)(shang)所(suo)述(shu)(shu)實施例(li)(li)的(de)(de)(de)各(ge)技(ji)術(shu)特(te)征(zheng)(zheng)可以進(jin)行任意的(de)(de)(de)組合(he)，為使(shi)描述(shu)(shu)簡潔，未對上(shang)(shang)述(shu)(shu)實施例(li)(li)中的(de)(de)(de)各(ge)個技(ji)術(shu)特(te)征(zheng)(zheng)所(suo)有可能(neng)的(de)(de)(de)組合(he)都進(jin)行描述(shu)(shu)，然而，只要這些(xie)技(ji)術(shu)特(te)征(zheng)(zheng)的(de)(de)(de)組合(he)不存(cun)在矛盾，都應(ying)當認為是本(ben)說明書記載(zai)的(de)(de)(de)范圍。

以(yi)(yi)上所(suo)述實施(shi)例僅表達了本發明(ming)(ming)的(de)(de)幾種(zhong)實施(shi)方(fang)式，其描述較為(wei)具體和詳細，但并(bing)不能因(yin)此(ci)而(er)理解(jie)為(wei)對發明(ming)(ming)專利(li)范圍的(de)(de)限(xian)制。應當指出(chu)的(de)(de)是，對于本領(ling)域的(de)(de)普通(tong)技(ji)術人(ren)員來說，在不脫(tuo)離本發明(ming)(ming)構思(si)的(de)(de)前提下，還可以(yi)(yi)做(zuo)出(chu)若干變形和改進(jin)，這些(xie)都屬于本發明(ming)(ming)的(de)(de)保(bao)護范圍。因(yin)此(ci)，本發明(ming)(ming)專利(li)的(de)(de)保(bao)護范圍應以(yi)(yi)所(suo)附權(quan)利(li)要求為(wei)準。