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750kV電抗器局部放電試驗裝置用電容器的制作方法

文(wen)檔序號:11214104閱讀:668來源:國知局
750kV電抗器局部放電試驗裝置用電容器的制造方法

本發明涉(she)(she)及一種電(dian)(dian)容器(qi)(qi),具體(ti)涉(she)(she)及一種750kv電(dian)(dian)抗器(qi)(qi)局部放電(dian)(dian)試(shi)驗(yan)裝置用電(dian)(dian)容器(qi)(qi),屬于(yu)高壓電(dian)(dian)器(qi)(qi)技(ji)術領域。



背景技術:

隨著(zhu)電(dian)(dian)力系統(tong)和(he)輸(shu)(shu)電(dian)(dian)規模的擴大、高新技術(shu)的發(fa)展,推(tui)動了高壓輸(shu)(shu)電(dian)(dian)技術(shu)的發(fa)展與研(yan)究。空氣(qi)間(jian)隙的要求(qiu)是電(dian)(dian)氣(qi)一次設備(bei)高壓試驗(yan)系統(tong)首先要考慮(lv)的問題,其(qi)直(zhi)接(jie)決定著(zhu)高壓試驗(yan)設備(bei)在(zai)不同(tong)海拔地區能(neng)夠正(zheng)常使用。

國(guo)家(jia)提出智能電(dian)(dian)網發展戰略,為(wei)了(le)滿足未來(lai)我(wo)國(guo)經濟社會發展的(de)用(yong)電(dian)(dian)需(xu)求(qiu),國(guo)家(jia)對國(guo)內(nei)電(dian)(dian)力(li)(li)系統(tong)升級,特別是高壓(ya)試驗基地(di)的(de)建立(li),這(zhe)(zhe)(zhe)就(jiu)需(xu)要電(dian)(dian)力(li)(li)設備廠家(jia)對生產(chan)(chan)的(de)電(dian)(dian)力(li)(li)產(chan)(chan)品參數、性能都有所提高。為(wei)了(le)保證這(zhe)(zhe)(zhe)些電(dian)(dian)力(li)(li)產(chan)(chan)品能夠(gou)安全運(yun)行輸配電(dian)(dian)系統(tong),同(tong)時兼顧這(zhe)(zhe)(zhe)類沖擊電(dian)(dian)容器使用(yong)范圍廣的(de)特點,生產(chan)(chan)一種電(dian)(dian)壓(ya)等級高、適應于高海拔地(di)區的(de)電(dian)(dian)容器成為(wei)需(xu)求(qiu)。

目前(qian)現有電(dian)容(rong)(rong)器往往被應(ying)(ying)用(yong)于海拔1000米以下(xia)的(de)(de)地區,當(dang)其(qi)被應(ying)(ying)用(yong)在(zai)海拔高達3000米的(de)(de)地區時(shi)(shi),由于空氣較為稀薄,介(jie)電(dian)常(chang)數(shu)下(xia)降,極易出現表面爬電(dian)現象。此(ci)外,隨著(zhu)電(dian)力電(dian)容(rong)(rong)器事業的(de)(de)發展,客戶對電(dian)容(rong)(rong)器的(de)(de)容(rong)(rong)量(liang)要求越來越大(da),普通電(dian)容(rong)(rong)器的(de)(de)容(rong)(rong)量(liang)已經不能滿足客戶需求了,在(zai)增(zeng)大(da)殼體(ti)體(ti)積的(de)(de)同時(shi)(shi),單純增(zeng)大(da)電(dian)容(rong)(rong)元件的(de)(de)體(ti)積,增(zeng)加的(de)(de)容(rong)(rong)量(liang)是很小的(de)(de),如(ru)何在(zai)不增(zeng)大(da)殼體(ti)的(de)(de)同時(shi)(shi)大(da)幅增(zeng)大(da)容(rong)(rong)量(liang)成(cheng)為本技(ji)術(shu)領域(yu)技(ji)術(shu)人員所要解決的(de)(de)首要問題。

中國(guo)實用新型專利(專利號:201520095286.6,申(shen)請時間:2015-02-11)公開了一種傘裙外(wai)(wai)(wai)(wai)殼(ke)(ke)(ke)(ke)(ke)電(dian)(dian)(dian)容(rong)(rong)器(qi),包括外(wai)(wai)(wai)(wai)殼(ke)(ke)(ke)(ke)(ke)、端(duan)蓋板(ban)和(he)電(dian)(dian)(dian)容(rong)(rong)芯(xin)子(zi),所述外(wai)(wai)(wai)(wai)殼(ke)(ke)(ke)(ke)(ke)兩端(duan)圓(yuan)(yuan)(yuan)周上設(she)(she)置有(you)(you)(you)向(xiang)內(nei)(nei)(nei)凸出彎折的(de)(de)彎折凸起,外(wai)(wai)(wai)(wai)殼(ke)(ke)(ke)(ke)(ke)內(nei)(nei)(nei)的(de)(de)彎折凸起外(wai)(wai)(wai)(wai)側支撐有(you)(you)(you)端(duan)蓋板(ban),所述端(duan)蓋板(ban)上設(she)(she)置有(you)(you)(you)一層(ceng)用于密封端(duan)蓋板(ban)的(de)(de)密封樹脂,外(wai)(wai)(wai)(wai)殼(ke)(ke)(ke)(ke)(ke)兩端(duan)開口內(nei)(nei)(nei)壁(bi)設(she)(she)置有(you)(you)(you)向(xiang)內(nei)(nei)(nei)彎曲的(de)(de)圓(yuan)(yuan)(yuan)弧(hu)段,密封樹脂四(si)周通過(guo)與(yu)圓(yuan)(yuan)(yuan)弧(hu)段配合的(de)(de)密封圈密封連接(jie)外(wai)(wai)(wai)(wai)殼(ke)(ke)(ke)(ke)(ke)內(nei)(nei)(nei)壁(bi),所述電(dian)(dian)(dian)容(rong)(rong)芯(xin)子(zi)設(she)(she)置在(zai)外(wai)(wai)(wai)(wai)殼(ke)(ke)(ke)(ke)(ke)內(nei)(nei)(nei),電(dian)(dian)(dian)容(rong)(rong)芯(xin)子(zi)圓(yuan)(yuan)(yuan)周壁(bi)與(yu)外(wai)(wai)(wai)(wai)殼(ke)(ke)(ke)(ke)(ke)內(nei)(nei)(nei)壁(bi)之間設(she)(she)置有(you)(you)(you)薄(bo)膜(mo)圈,所述薄(bo)膜(mo)圈貼附在(zai)外(wai)(wai)(wai)(wai)殼(ke)(ke)(ke)(ke)(ke)內(nei)(nei)(nei)壁(bi)上,所述薄(bo)膜(mo)圈與(yu)電(dian)(dian)(dian)容(rong)(rong)芯(xin)子(zi)圓(yuan)(yuan)(yuan)周壁(bi)之間填充(chong)有(you)(you)(you)環(huan)氧聚酯(zhi)圈,所述外(wai)(wai)(wai)(wai)殼(ke)(ke)(ke)(ke)(ke)外(wai)(wai)(wai)(wai)壁(bi)沿軸向(xiang)設(she)(she)置有(you)(you)(you)傘裙結構(gou)。該(gai)電(dian)(dian)(dian)容(rong)(rong)器(qi)結構(gou)簡單,易加工,使用安全方便,爬(pa)電(dian)(dian)(dian)距離長,無需人工清潔(jie)維護,提(ti)高了散熱性能(neng),但是不能(neng)用于高海拔地區,也存在(zai)著電(dian)(dian)(dian)容(rong)(rong)器(qi)容(rong)(rong)量低的(de)(de)問題(ti)。

中國實用新型專利(li)(專利(li)號:201320550968.2,申請(qing)時間:2013-09-06)公開了(le)一種高原交流濾波電(dian)容(rong)(rong)器(qi)(qi),包括電(dian)容(rong)(rong)器(qi)(qi)芯組(zu)、絕緣層(ceng)、填充料(liao)、金屬(shu)(shu)外(wai)殼、殼蓋(gai),所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)電(dian)容(rong)(rong)器(qi)(qi)芯組(zu)設置于所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)金屬(shu)(shu)外(wai)殼內(nei),所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)電(dian)容(rong)(rong)器(qi)(qi)芯組(zu)與所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)金屬(shu)(shu)外(wai)殼之(zhi)間設有(you)(you)所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)絕緣層(ceng),所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)填充料(liao)填充在(zai)所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)金屬(shu)(shu)外(wai)殼內(nei)的空隙(xi)中,所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)殼蓋(gai)上設有(you)(you)引(yin)(yin)出(chu)端子,所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)引(yin)(yin)出(chu)端子與所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)電(dian)容(rong)(rong)器(qi)(qi)芯組(zu)電(dian)連接。該電(dian)容(rong)(rong)器(qi)(qi)雖然可以用于高海(hai)拔地區,但是依然存(cun)在(zai)電(dian)容(rong)(rong)器(qi)(qi)容(rong)(rong)量低的問題(ti)。

有(you)鑒(jian)于此(ci),本發明(ming)提供(gong)一種750kv電(dian)抗器(qi)(qi)局部放電(dian)試驗裝(zhuang)置用(yong)電(dian)容器(qi)(qi),以(yi)解(jie)決(jue)上述問題(ti)。



技術實現要素:

針對背景技術中的(de)(de)(de)不足,本發明提供(gong)一種750kv電(dian)抗(kang)器(qi)(qi)局部放電(dian)試驗(yan)裝置(zhi)用(yong)(yong)電(dian)容(rong)器(qi)(qi),在海拔(ba)高(gao)達3000米的(de)(de)(de)地區使用(yong)(yong)時(shi)(shi),不會發生爬電(dian)、放電(dian)以及被(bei)擊穿的(de)(de)(de)現(xian)象,使用(yong)(yong)安(an)全(quan)性(xing)高(gao);通過對電(dian)容(rong)器(qi)(qi)心子元(yuan)件(jian)的(de)(de)(de)結構設計(ji)在不增加殼體(ti)體(ti)積的(de)(de)(de)同時(shi)(shi)增大了電(dian)容(rong)器(qi)(qi)容(rong)量(liang);抗(kang)污閃能(neng)力高(gao),具有加工性(xing)能(neng)好,不易(yi)變(bian)形和抗(kang)電(dian)強(qiang)度大的(de)(de)(de)優點,適(shi)應于高(gao)海拔(ba)高(gao)電(dian)壓的(de)(de)(de)區域使用(yong)(yong)。

為了達到上(shang)述(shu)(shu)目的(de)(de),本發(fa)明所(suo)(suo)采用(yong)的(de)(de)技術方案(an)是:一種750kv電(dian)(dian)(dian)(dian)(dian)(dian)抗器(qi)局部放電(dian)(dian)(dian)(dian)(dian)(dian)試驗(yan)裝置(zhi)用(yong)電(dian)(dian)(dian)(dian)(dian)(dian)容器(qi),包(bao)(bao)括(kuo)外(wai)殼、心子和(he)(he)出線套管(guan),在所(suo)(suo)述(shu)(shu)外(wai)殼上(shang)設(she)(she)置(zhi)有供安裝及(ji)吊運的(de)(de)吊攀;所(suo)(suo)述(shu)(shu)心子包(bao)(bao)括(kuo)元件和(he)(he)絕(jue)緣件,所(suo)(suo)述(shu)(shu)外(wai)殼包(bao)(bao)括(kuo)上(shang)段(duan)(duan)、下段(duan)(duan)以及(ji)設(she)(she)置(zhi)在上(shang)段(duan)(duan)及(ji)下段(duan)(duan)之(zhi)間(jian)(jian)的(de)(de)中(zhong)段(duan)(duan),所(suo)(suo)述(shu)(shu)上(shang)段(duan)(duan)和(he)(he)下段(duan)(duan)上(shang)均設(she)(she)置(zhi)有硅橡膠傘裙(qun);所(suo)(suo)述(shu)(shu)元件包(bao)(bao)括(kuo)平(ping)行(xing)相對設(she)(she)置(zhi)的(de)(de)第(di)一電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)(ji)層(ceng)(ceng)(ceng)(ceng)和(he)(he)第(di)二電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)(ji)層(ceng)(ceng)(ceng)(ceng),以及(ji)設(she)(she)置(zhi)在第(di)一電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)(ji)層(ceng)(ceng)(ceng)(ceng)和(he)(he)第(di)二電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)(ji)層(ceng)(ceng)(ceng)(ceng)之(zhi)間(jian)(jian)的(de)(de)第(di)三電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)(ji)層(ceng)(ceng)(ceng)(ceng)、第(di)四電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)(ji)層(ceng)(ceng)(ceng)(ceng),第(di)三電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)(ji)層(ceng)(ceng)(ceng)(ceng)和(he)(he)第(di)四電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)(ji)層(ceng)(ceng)(ceng)(ceng)之(zhi)間(jian)(jian)通過(guo)絕(jue)緣件彼此(ci)分離。

進一(yi)步的(de),第三電極層(ceng)、第四電極層(ceng)以及絕緣件均呈波浪形(xing)彎(wan)曲(qu)結(jie)構。

進一步的,中段的直徑(jing)(jing)大(da)于硅橡(xiang)膠(jiao)傘群的直徑(jing)(jing),所述(shu)吊攀設置在中段的一組相對側(ce)壁上。

進一步的(de),所述上(shang)段(duan)(duan)和下段(duan)(duan)上(shang)設置有硅橡膠(jiao)傘裙的(de)長(chang)度與中段(duan)(duan)的(de)長(chang)度相等(deng)。

進一(yi)步的,所述元件由(you)聚丙烯薄膜和鋁箔(bo)極板(ban)卷制而成。

本發(fa)明的(de)有益效果是(shi):

1、氣壓特征指(zhi)數(shu)優越(yue),在(zai)海拔高(gao)達3000米的地區使(shi)(shi)用(yong)時,不會發生爬電(dian)、放電(dian)以及被擊穿的現(xian)象,使(shi)(shi)用(yong)安全性高(gao),適用(yong)范(fan)圍較廣;

2、電(dian)容(rong)器心子元件采用波浪交叉彎(wan)曲的結構,在不增加殼體(ti)體(ti)積的同時大大增加了電(dian)容(rong)器容(rong)量;

3、傘(san)裙結構的設置極大的增(zeng)加了電(dian)(dian)(dian)(dian)極層之間的爬(pa)電(dian)(dian)(dian)(dian)距離(li),能有效改善電(dian)(dian)(dian)(dian)容器(qi)周圍的電(dian)(dian)(dian)(dian)場分布,提高(gao)電(dian)(dian)(dian)(dian)容器(qi)的抗污閃性能,滿足在高(gao)電(dian)(dian)(dian)(dian)壓、高(gao)污穢、高(gao)濕多(duo)霉(mei)菌等惡劣環境下的使用要求(qiu);

4、不需要特制大規格的(de)(de)電(dian)容(rong)元件(jian),可以使用現有技(ji)術大批量(liang)生(sheng)產(chan)的(de)(de)小(xiao)規格型號(hao)的(de)(de)電(dian)容(rong)元件(jian)來制作,降低生(sheng)產(chan)成本;

5、所述電(dian)容器還具有加工性能好、不易變形、抗電(dian)強度大的優點。

附圖說明

附(fu)圖1為本發明所述的(de)750kv電抗器(qi)局(ju)部放電試(shi)驗裝置用電容器(qi)的(de)結(jie)構示(shi)意(yi)圖;

附圖2為(wei)本(ben)發明所述(shu)的元件(jian)的結(jie)構(gou)示意圖。

圖(tu)中:1-外殼(ke);2-出線套管;3-吊攀;4-第一電(dian)極(ji)層;5-第二電(dian)極(ji)層;6-第三電(dian)極(ji)層;7-第四電(dian)極(ji)層;8-絕緣(yuan)件;11-上段;12-下段;13-中段。

具體實施方式

為了更好的(de)理解本(ben)發(fa)明(ming),下(xia)面結合實施例進一步(bu)闡(chan)明(ming)本(ben)發(fa)明(ming)的(de)內容(rong),但本(ben)發(fa)明(ming)的(de)內容(rong)不僅(jin)僅(jin)局(ju)限于(yu)下(xia)面的(de)實施例。

下(xia)面結合附圖與實(shi)施(shi)例對本發明(ming)做進一(yi)步說(shuo)明(ming)。如圖1所(suo)(suo)(suo)示,本發明(ming)所(suo)(suo)(suo)述(shu)的(de)一(yi)種750kv電抗器局部(bu)放電試驗裝置(zhi)(zhi)用電容器,包(bao)括外殼1、心子和出(chu)線(xian)套管2,在(zai)所(suo)(suo)(suo)述(shu)外殼1上(shang)設置(zhi)(zhi)有供安裝及吊運的(de)吊攀(pan)3;所(suo)(suo)(suo)述(shu)心子包(bao)括元件和絕緣件8,所(suo)(suo)(suo)述(shu)外殼1包(bao)括上(shang)段(duan)(duan)11、下(xia)段(duan)(duan)12以及設置(zhi)(zhi)在(zai)上(shang)段(duan)(duan)11及下(xia)段(duan)(duan)12之間的(de)中段(duan)(duan)13。所(suo)(suo)(suo)述(shu)上(shang)段(duan)(duan)11和下(xia)段(duan)(duan)12上(shang)均設置(zhi)(zhi)有硅橡(xiang)膠傘裙(qun)14,所(suo)(suo)(suo)述(shu)中段(duan)(duan)13為加厚無(wu)傘裙(qun)硅橡(xiang)膠段(duan)(duan)。

所述電容器為(wei)柱狀(zhuang)或者長(chang)(chang)方(fang)體形,優選(xuan)為(wei)柱狀(zhuang)結構。中(zhong)段13的(de)直(zhi)徑(jing)大于(yu)硅(gui)橡膠傘群14的(de)外(wai)直(zhi)徑(jing)或者說最(zui)大直(zhi)徑(jing)。所述上段11和下段12上設置有硅(gui)橡膠傘裙14的(de)長(chang)(chang)度(du)與中(zhong)段13的(de)長(chang)(chang)度(du)相(xiang)等。

傘裙結構的(de)(de)設置極大的(de)(de)增加了(le)電極層之間的(de)(de)爬電距離(li),能有效改善電容(rong)器(qi)周(zhou)圍的(de)(de)電場分(fen)布,提高電容(rong)器(qi)的(de)(de)抗污(wu)閃性能,滿足在高電壓、高污(wu)穢、高濕多霉菌等(deng)惡劣(lie)環境(jing)下(xia)的(de)(de)使用要求。

如圖2所示,所述元(yuan)件(jian)包(bao)括平行相對設(she)置的第(di)(di)一(yi)電(dian)(dian)(dian)(dian)極(ji)層(ceng)(ceng)(ceng)(ceng)4和第(di)(di)二電(dian)(dian)(dian)(dian)極(ji)層(ceng)(ceng)(ceng)(ceng)5,以及(ji)設(she)置在(zai)第(di)(di)一(yi)電(dian)(dian)(dian)(dian)極(ji)層(ceng)(ceng)(ceng)(ceng)4和第(di)(di)二電(dian)(dian)(dian)(dian)極(ji)層(ceng)(ceng)(ceng)(ceng)5之(zhi)間(jian)的第(di)(di)三(san)(san)電(dian)(dian)(dian)(dian)極(ji)層(ceng)(ceng)(ceng)(ceng)6、第(di)(di)四電(dian)(dian)(dian)(dian)極(ji)層(ceng)(ceng)(ceng)(ceng)7,第(di)(di)三(san)(san)電(dian)(dian)(dian)(dian)極(ji)層(ceng)(ceng)(ceng)(ceng)6和第(di)(di)四電(dian)(dian)(dian)(dian)極(ji)層(ceng)(ceng)(ceng)(ceng)7之(zhi)間(jian)通過填充絕緣(yuan)(yuan)件(jian)8彼此分(fen)離,絕緣(yuan)(yuan)件(jian)8也可(ke)以稱為(wei)絕緣(yuan)(yuan)層(ceng)(ceng)(ceng)(ceng)。第(di)(di)三(san)(san)電(dian)(dian)(dian)(dian)極(ji)層(ceng)(ceng)(ceng)(ceng)6、第(di)(di)四電(dian)(dian)(dian)(dian)極(ji)層(ceng)(ceng)(ceng)(ceng)7以及(ji)絕緣(yuan)(yuan)件(jian)8均呈波(bo)(bo)浪(lang)形彎(wan)曲結構,且為(wei)彼此交叉(cha)彎(wan)曲,是(shi)一(yi)種波(bo)(bo)浪(lang)形交叉(cha)彎(wan)曲結構。通過上述電(dian)(dian)(dian)(dian)極(ji)層(ceng)(ceng)(ceng)(ceng)的設(she)置使其具有極(ji)大的比(bi)表面積,能(neng)有效(xiao)存儲大量(liang)電(dian)(dian)(dian)(dian)荷,確保了電(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)具有很高的擊穿電(dian)(dian)(dian)(dian)壓,大幅度提高了電(dian)(dian)(dian)(dian)介質電(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)的電(dian)(dian)(dian)(dian)荷存儲能(neng)力,試驗發現該電(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)能(neng)量(liang)密度可(ke)達到(dao)2wh/kg。

所述吊攀3成對設(she)置(zhi),且是相對設(she)置(zhi),具體設(she)置(zhi)在中段13的側壁上。

所述(shu)元件(jian)以聚(ju)丙(bing)烯薄膜(mo)為介質,由聚(ju)丙(bing)烯薄膜(mo)和(he)鋁箔(bo)極板卷制而成,提高(gao)了功率因數,改善電壓質量,降低(di)設備及(ji)線路損耗。

上述實施例對(dui)本(ben)發(fa)明(ming)(ming)做了詳細說明(ming)(ming)。當然,上述說明(ming)(ming)并非對(dui)本(ben)發(fa)明(ming)(ming)的限(xian)制,本(ben)發(fa)明(ming)(ming)也(ye)(ye)不僅限(xian)于(yu)上述例子(zi),相關(guan)技術人員(yuan)在本(ben)發(fa)明(ming)(ming)的實質范圍內所作(zuo)出的變化、改型、添加或(huo)減少、替換,也(ye)(ye)屬于(yu)本(ben)發(fa)明(ming)(ming)的保護范圍。

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