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一種可重構的均衡電路結構與控制方法與流程

文檔序號:11203667閱讀:971來源:國知局(ju)
一種可重構的均衡電路結構與控制方法與流程

本(ben)發明屬(shu)于電(dian)池(chi)均衡(heng)和重構技(ji)術領域,特別提出(chu)一(yi)種針對串聯電(dian)池(chi)組的可(ke)重構的均衡(heng)電(dian)路結構與控制方法。



背景技術:

由于(yu)污染和能(neng)源危機,對新(xin)能(neng)源的研究應用(yong)在世界范圍內大幅度增(zeng)加,如(ru)(ru)電(dian)(dian)動車、光伏發(fa)(fa)電(dian)(dian)、風力(li)發(fa)(fa)電(dian)(dian)等。這些應用(yong)中最關鍵的部件(jian)就是(shi)電(dian)(dian)池儲(chu)能(neng)系統,為(wei)了滿足動力(li)和能(neng)量的需求,電(dian)(dian)池儲(chu)能(neng)系統需要(yao)上百甚至上千電(dian)(dian)池單元(yuan)串聯(lian)或并聯(lian)連接(jie),使用(yong)如(ru)(ru)此多電(dian)(dian)池單元(yuan),特(te)別是(shi)對于(yu)串聯(lian),電(dian)(dian)池不均衡問題不能(neng)忽視。

電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)均(jun)衡就是通過(guo)某種方法使(shi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)(zu)中(zhong)各(ge)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)單體的(de)(de)狀態(tai)趨于(yu)(yu)一致(zhi)。電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)均(jun)衡對于(yu)(yu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)儲能(neng)系統(tong)至(zhi)關(guan)重要,電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)單體由于(yu)(yu)其內阻、容(rong)(rong)量(liang)、荷電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)狀態(tai)、外界(jie)環(huan)境等因(yin)素的(de)(de)不(bu)同(tong),在實際(ji)使(shi)用時會(hui)處于(yu)(yu)不(bu)均(jun)衡的(de)(de)狀態(tai)。電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)(zu)中(zhong)一些(xie)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)具有較小的(de)(de)容(rong)(rong)量(liang),這些(xie)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)在放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)時將(jiang)(jiang)更早的(de)(de)達到放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓限制(zhi),而系統(tong)將(jiang)(jiang)為了(le)安全停止(zhi)整個電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)(zu)放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian),導致(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)(zu)中(zhong)良好電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)不(bu)能(neng)完(wan)全放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian),充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)過(guo)程(cheng)也是相同(tong)的(de)(de)。因(yin)此,電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)(zu)的(de)(de)總容(rong)(rong)量(liang)將(jiang)(jiang)減小即“木桶效應”。電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)間不(bu)均(jun)衡會(hui)導致(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)(zu)的(de)(de)實際(ji)使(shi)用容(rong)(rong)量(liang)低于(yu)(yu)額定值,部分(fen)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)還可(ke)能(neng)出現(xian)過(guo)充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)或過(guo)放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)的(de)(de)情況(kuang),影響(xiang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)使(shi)用特性(xing),降(jiang)低使(shi)用壽命。

當(dang)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)組(zu)(zu)(zu)中(zhong)的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元(yuan)的(de)(de)(de)(de)(de)容量(liang)幾乎相同(tong)且(qie)僅具有不(bu)同(tong)的(de)(de)(de)(de)(de)荷電(dian)(dian)(dian)(dian)狀態(tai)時(shi),均(jun)衡是(shi)(shi)(shi)足夠的(de)(de)(de)(de)(de)。然而,有時(shi),電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)組(zu)(zu)(zu)中(zhong)的(de)(de)(de)(de)(de)一些電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)體(ti)(ti)(ti)可能(neng)比其他電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)體(ti)(ti)(ti)更(geng)快(kuai)地衰退,這(zhe)些電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)體(ti)(ti)(ti)具有更(geng)少的(de)(de)(de)(de)(de)容量(liang),在(zai)(zai)這(zhe)種(zhong)(zhong)情(qing)況下(xia),均(jun)衡僅會在(zai)(zai)單(dan)體(ti)(ti)(ti)容量(liang)差異(yi)較小時(shi)工作(zuo),當(dang)單(dan)體(ti)(ti)(ti)容量(liang)差異(yi)較大時(shi),一些電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)體(ti)(ti)(ti)將會失效(xiao)。這(zhe)種(zhong)(zhong)情(qing)況下(xia),均(jun)衡技(ji)術不(bu)能(neng)彌補這(zhe)種(zhong)(zhong)不(bu)平(ping)衡,更(geng)換(huan)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)體(ti)(ti)(ti)可能(neng)是(shi)(shi)(shi)最好的(de)(de)(de)(de)(de)解(jie)決(jue)方案。然而,這(zhe)些電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)體(ti)(ti)(ti)通常(chang)存儲(chu)在(zai)(zai)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)組(zu)(zu)(zu)中(zhong),更(geng)換(huan)它們(men)是(shi)(shi)(shi)非常(chang)困(kun)難、耗時(shi)和昂貴的(de)(de)(de)(de)(de)。重構技(ji)術被認為是(shi)(shi)(shi)上述(shu)問題(ti)的(de)(de)(de)(de)(de)另一種(zhong)(zhong)解(jie)決(jue)方案,它可以提(ti)高電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)組(zu)(zu)(zu)性(xing)能(neng)和延長電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)組(zu)(zu)(zu)的(de)(de)(de)(de)(de)壽命。重構電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)組(zu)(zu)(zu)提(ti)高了連(lian)接或(huo)(huo)移(yi)除電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)組(zu)(zu)(zu)中(zhong)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)體(ti)(ti)(ti)的(de)(de)(de)(de)(de)靈活性(xing)并(bing)且(qie)多(duo)個電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)體(ti)(ti)(ti)可以串聯(lian)、并(bing)聯(lian)或(huo)(huo)以串、并(bing)聯(lian)的(de)(de)(de)(de)(de)混合(he)方式配置。

然而,重構技(ji)術(shu)需要(yao)大(da)量開關及開關驅(qu)動電路,導致可靠性(xing)和價格昂貴問題不可避免。此外,在(zai)一個簡易系統(tong)中同時(shi)實(shi)現均衡(heng)和重構功能(neng)是非(fei)常困難的。



技術實現要素:

為了克服(fu)上述現有技術存在(zai)的(de)(de)缺陷,本發明的(de)(de)目的(de)(de)在(zai)于提供一種可重構的(de)(de)均(jun)(jun)衡電路結(jie)構與(yu)控(kong)制方(fang)法,電路結(jie)構簡單,控(kong)制復雜度低,兼具均(jun)(jun)衡與(yu)重構的(de)(de)作(zuo)用(yong)。

本發(fa)明是通過(guo)以下技術方(fang)案來實現:

本發(fa)明公開了一(yi)種可重構的(de)(de)均衡(heng)電路結(jie)構,由電池組與電池組熔斷絲fs串聯(lian)構成(cheng);其中,電池組包括n個串聯(lian)的(de)(de)電池模塊bmi;

所(suo)述電池(chi)模(mo)塊bmi包括電池(chi)單(dan)體bi、熔(rong)斷絲(si)fi、n溝(gou)道(dao)mosfetmi和(he)驅(qu)動(dong)電路di;電池(chi)單(dan)體bi和(he)熔(rong)斷絲(si)fi串聯(lian),電池(chi)單(dan)體bi和(he)熔(rong)斷絲(si)fi的(de)兩(liang)端分別與n溝(gou)道(dao)mosfetmi的(de)漏極和(he)源極相連(lian),n溝(gou)道(dao)mosfetmi的(de)柵極與驅(qu)動(dong)電路di相連(lian),形成環路。

優選地,所述驅(qu)動(dong)電(dian)(dian)路di由電(dian)(dian)阻(zu)(zu)電(dian)(dian)容(rong)過(guo)濾器(qi)和pwm驅(qu)動(dong)的(de)光(guang)電(dian)(dian)耦(ou)合(he)器(qi)組(zu)成(cheng),pwm與光(guang)電(dian)(dian)耦(ou)合(he)器(qi)的(de)輸(shu)入(ru)端(duan)相(xiang)連(lian),光(guang)電(dian)(dian)耦(ou)合(he)器(qi)輸(shu)出(chu)(chu)端(duan)的(de)一(yi)端(duan)與電(dian)(dian)阻(zu)(zu)電(dian)(dian)容(rong)過(guo)濾器(qi)串(chuan)聯后接(jie)入(ru)n溝道mosfetmi的(de)柵極,光(guang)電(dian)(dian)耦(ou)合(he)器(qi)輸(shu)出(chu)(chu)端(duan)的(de)另(ling)一(yi)端(duan)接(jie)入(ru)n溝道mosfetmi的(de)源極。

優選地,熔斷絲(si)fi的(de)額定電流大于電池組熔斷絲(si)fs的(de)額定電流。

本(ben)發明還公(gong)開了基于(yu)上述的(de)可重(zhong)構(gou)的(de)均衡(heng)電路結構(gou)進行(xing)均衡(heng)和重(zhong)構(gou)的(de)方法,包括(kuo)以下(xia)步驟:

1)系(xi)統初始化,使(shi)n溝道mosfetmi處(chu)于不導通(tong)狀(zhuang)態即off狀(zhuang)態,所(suo)有電(dian)池(chi)模(mo)塊(kuai)bmi處(chu)于正常模(mo)式,所(suo)有電(dian)池(chi)單體bi串聯(lian)連(lian)接組成(cheng)電(dian)池(chi)組,不需(xu)均衡和重構;

2)若有電池單(dan)體(ti)(ti)bi需要均衡,使n溝(gou)道mosfetmi工作在放大區,此時n溝(gou)道mosfetmi處于pwm狀態,等效(xiao)于一個(ge)開(kai)關和一個(ge)電阻的串聯(lian),對應(ying)的熔斷絲fi等效(xiao)于一個(ge)導(dao)體(ti)(ti),電池單(dan)體(ti)(ti)bi通過電阻消耗儲存(cun)的能量,實現單(dan)個(ge)電池單(dan)體(ti)(ti)bi的均衡;

若沒有電(dian)池單體bi需要(yao)均衡,則判斷是(shi)否有電(dian)池單體bi需要(yao)重構,

3)若有(you)(you)電池(chi)單(dan)(dan)體bi需要重構,使(shi)n溝道(dao)mosfetmi處于導(dao)通狀(zhuang)態即(ji)on狀(zhuang)態,等(deng)效于一個開關,電池(chi)單(dan)(dan)體bi被(bei)電池(chi)組旁(pang)路,實現電池(chi)單(dan)(dan)體bi重構;若沒有(you)(you)電池(chi)單(dan)(dan)體bi需要重構,則回(hui)到步驟2);

4)重復(fu)執行(xing)步驟2)和(he)3),直(zhi)至完成對電(dian)池組中(zhong)所有電(dian)池單體bi的(de)均衡(heng)和(he)重構(gou),提高電(dian)池組的(de)性能。

步驟1)、2)、3)中,n溝(gou)道mosfetmi所處的工作狀態,均是通過(guo)(guo)調(diao)節驅動(dong)電(dian)路(lu)dipwm占空比大小和電(dian)阻電(dian)容(rong)過(guo)(guo)濾器的濾波(bo)作用(yong)來(lai)控(kong)制施加到(dao)n溝(gou)道mosfetmi的直流信號實(shi)現。

當一(yi)個(ge)電(dian)池(chi)單體(ti)bi需要均(jun)衡時(shi),使(shi)n溝道(dao)(dao)mosfetmi工作在放大區,此時(shi),n溝道(dao)(dao)mosfetmi處(chu)于(yu)pwm狀態(tai),等效(xiao)于(yu)一(yi)個(ge)開關和(he)一(yi)個(ge)電(dian)阻的串聯(lian),對(dui)應的熔斷絲fi等效(xiao)于(yu)一(yi)個(ge)導體(ti),電(dian)池(chi)單體(ti)bi儲存的能量會通過電(dian)阻消(xiao)耗,實(shi)現單個(ge)電(dian)池(chi)單體(ti)的均(jun)衡。

當(dang)不止一個電(dian)池單(dan)體(ti)bi需要(yao)均(jun)(jun)衡(heng)時,每個需要(yao)均(jun)(jun)衡(heng)的電(dian)池單(dan)體(ti)bi對應的mosfetmi均(jun)(jun)工作在放大區(qu),處于pwm狀態,分別等效于一個開關和一個電(dian)阻(zu)的串聯(lian),多(duo)個電(dian)池單(dan)體(ti)bi通過電(dian)阻(zu)消耗能量(liang),互(hu)不干擾,實現多(duo)個電(dian)池單(dan)體(ti)的均(jun)(jun)衡(heng)。

當一(yi)個(ge)電(dian)(dian)(dian)(dian)池(chi)單體bi需要(yao)重構時,使n溝道mosfetmi處于(yu)導通狀態(tai)即on狀態(tai),等效于(yu)一(yi)個(ge)開關,此時,該電(dian)(dian)(dian)(dian)池(chi)模塊(kuai)bmi短路,短路電(dian)(dian)(dian)(dian)流破(po)壞該電(dian)(dian)(dian)(dian)池(chi)模塊(kuai)bmi的熔斷(duan)絲(si)fi,電(dian)(dian)(dian)(dian)池(chi)單體bi被電(dian)(dian)(dian)(dian)池(chi)組旁路,實現單個(ge)電(dian)(dian)(dian)(dian)池(chi)單體的重構。

當不止一個(ge)電池單(dan)體(ti)bi需要重(zhong)構時,每個(ge)需要重(zhong)構的電池單(dan)體(ti)bi對(dui)應的mosfetmi均處于(yu)導通狀態(tai)即on狀態(tai),等效于(yu)開關,相應的熔(rong)斷絲都會被(bei)破壞,相應的電池單(dan)體(ti)都會被(bei)電池組(zu)旁路,實現(xian)電池組(zu)重(zhong)構。

與現有(you)技術(shu)相比,本發明具(ju)有(you)以下有(you)益的技術(shu)效果:

本發明公(gong)開的(de)(de)(de)可(ke)(ke)重構(gou)(gou)的(de)(de)(de)均(jun)衡電(dian)(dian)(dian)(dian)(dian)路(lu)結構(gou)(gou),由電(dian)(dian)(dian)(dian)(dian)池組(zu)與(yu)(yu)電(dian)(dian)(dian)(dian)(dian)池組(zu)熔(rong)斷(duan)絲(si)fs串聯構(gou)(gou)成;其(qi)中(zhong),電(dian)(dian)(dian)(dian)(dian)池組(zu)包括n個串聯的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)池模塊(kuai)(kuai)bmi;電(dian)(dian)(dian)(dian)(dian)池模塊(kuai)(kuai)bmi包括電(dian)(dian)(dian)(dian)(dian)池單(dan)(dan)體bi、熔(rong)斷(duan)絲(si)fi、n溝(gou)道(dao)mosfetmi和驅動(dong)電(dian)(dian)(dian)(dian)(dian)路(lu)di;電(dian)(dian)(dian)(dian)(dian)池單(dan)(dan)體bi和熔(rong)斷(duan)絲(si)fi串聯,電(dian)(dian)(dian)(dian)(dian)池單(dan)(dan)體bi和熔(rong)斷(duan)絲(si)fi的(de)(de)(de)兩端分別與(yu)(yu)n溝(gou)道(dao)mosfetmi的(de)(de)(de)漏極(ji)和源(yuan)極(ji)相(xiang)(xiang)連,n溝(gou)道(dao)mosfetmi的(de)(de)(de)柵極(ji)與(yu)(yu)驅動(dong)電(dian)(dian)(dian)(dian)(dian)路(lu)di相(xiang)(xiang)連,形(xing)成環路(lu)。本發明的(de)(de)(de)可(ke)(ke)重構(gou)(gou)均(jun)衡電(dian)(dian)(dian)(dian)(dian)路(lu)拓撲結構(gou)(gou)相(xiang)(xiang)比(bi)于其(qi)他均(jun)衡電(dian)(dian)(dian)(dian)(dian)路(lu)拓撲結構(gou)(gou)有(you)效(xiao)的(de)(de)(de)減(jian)少(shao)了(le)mosfet的(de)(de)(de)使(shi)用(yong),雖然增加了(le)熔(rong)斷(duan)絲(si)的(de)(de)(de)使(shi)用(yong),但熔(rong)斷(duan)絲(si)的(de)(de)(de)價格相(xiang)(xiang)比(bi)于mosfet便宜(yi)很多(duo),降低(di)(di)了(le)成本。除(chu)此之外,熔(rong)斷(duan)絲(si)是無源(yuan)元件,不(bu)需(xu)要驅動(dong)電(dian)(dian)(dian)(dian)(dian)路(lu)和控制(zhi)信號,電(dian)(dian)(dian)(dian)(dian)路(lu)控制(zhi)復雜度低(di)(di)。因此,所(suo)提出的(de)(de)(de)可(ke)(ke)重構(gou)(gou)均(jun)衡電(dian)(dian)(dian)(dian)(dian)路(lu)拓撲結構(gou)(gou)簡化了(le)整個控制(zhi)系統(tong)以(yi)及(ji)驅動(dong)系統(tong),有(you)效(xiao)地降低(di)(di)了(le)電(dian)(dian)(dian)(dian)(dian)路(lu)成本。

基于所(suo)提出(chu)的(de)(de)(de)(de)可重(zhong)構(gou)均衡電(dian)(dian)路拓撲(pu)結(jie)構(gou),本發明所(suo)提出(chu)的(de)(de)(de)(de)控(kong)制方法通(tong)過對(dui)驅動電(dian)(dian)路pwm占(zhan)空(kong)比的(de)(de)(de)(de)控(kong)制實現(xian)了電(dian)(dian)池(chi)組無泄放電(dian)(dian)阻(zu)的(de)(de)(de)(de)被動均衡,以(yi)及(ji)旁(pang)路電(dian)(dian)池(chi)組中的(de)(de)(de)(de)故(gu)障(zhang)電(dian)(dian)池(chi)模(mo)塊,實現(xian)重(zhong)構(gou)。在很好的(de)(de)(de)(de)保(bao)證(zheng)串聯(lian)電(dian)(dian)池(chi)組的(de)(de)(de)(de)均衡功(gong)能的(de)(de)(de)(de)同(tong)時(shi),也使系統具有很好的(de)(de)(de)(de)重(zhong)構(gou)功(gong)能。

附圖說明

圖1為本發明可重構的均(jun)衡電路的拓撲(pu)結構圖;

圖2為電池模塊(kuai)bi組成電路(lu)圖;

圖(tu)3為本發明的控(kong)制方(fang)法具體(ti)流程圖(tu);

圖(tu)4為正(zheng)常模式下電池組的拓撲(pu)結(jie)構(gou)圖(tu);

圖(tu)5為單個電(dian)池模塊(kuai)bi均衡過程圖(tu);

圖(tu)6為多(duo)個(ge)電(dian)池模塊均(jun)衡過(guo)程(cheng)圖(tu);

圖(tu)7為單個電池模塊(kuai)重構(gou)過程(cheng)圖(tu);

圖(tu)8為多個(ge)電池模塊重構過程圖(tu)。

具體實施方式

下面結合具體的實施(shi)例對(dui)本發明做進一步的詳細說明,所述是對(dui)本發明的解(jie)釋而(er)不是限定。

參(can)見圖1,本發(fa)明的(de)(de)針(zhen)對串聯電池(chi)(chi)(chi)組的(de)(de)可重構均衡電路結構,由電池(chi)(chi)(chi)組與電池(chi)(chi)(chi)組熔斷絲fs串聯構成(cheng);其中,電池(chi)(chi)(chi)組包(bao)括(kuo)n個串聯的(de)(de)電池(chi)(chi)(chi)模塊bmi;

所述電(dian)(dian)池(chi)模塊bmi包括電(dian)(dian)池(chi)單體(ti)bi、熔斷絲(si)fi、n溝道(dao)(dao)mosfetmi和驅動(dong)電(dian)(dian)路di;電(dian)(dian)池(chi)單體(ti)bi和熔斷絲(si)fi串聯,電(dian)(dian)池(chi)單體(ti)bi和熔斷絲(si)fi的兩端分別與n溝道(dao)(dao)mosfetmi的漏極(ji)和源(yuan)極(ji)相連,n溝道(dao)(dao)mosfetmi的柵極(ji)與驅動(dong)電(dian)(dian)路di相連,形成環(huan)路。

參見圖2,所述(shu)驅(qu)動(dong)(dong)電(dian)(dian)路di由電(dian)(dian)阻電(dian)(dian)容過濾(lv)器(qi)(qi)和(he)pwm驅(qu)動(dong)(dong)的(de)(de)光(guang)電(dian)(dian)耦(ou)(ou)(ou)合器(qi)(qi)組成,pwm與(yu)光(guang)電(dian)(dian)耦(ou)(ou)(ou)合器(qi)(qi)的(de)(de)輸(shu)入(ru)端(duan)相連,光(guang)電(dian)(dian)耦(ou)(ou)(ou)合器(qi)(qi)輸(shu)出端(duan)的(de)(de)一(yi)端(duan)與(yu)電(dian)(dian)阻電(dian)(dian)容過濾(lv)器(qi)(qi)串聯后接(jie)入(ru)n溝(gou)道(dao)mosfetmi的(de)(de)柵極(ji),光(guang)電(dian)(dian)耦(ou)(ou)(ou)合器(qi)(qi)輸(shu)出端(duan)的(de)(de)另一(yi)端(duan)接(jie)入(ru)n溝(gou)道(dao)mosfetmi的(de)(de)源極(ji)。

優選地,熔斷絲(si)fi的額定電(dian)流大于電(dian)池組(zu)熔斷絲(si)fs的額定電(dian)流。

參見圖(tu)3,本發(fa)明的電池單(dan)體間均衡和電池組重(zhong)構方(fang)法,包(bao)括以下步驟:

1)系統初(chu)始化,通(tong)過調節(jie)n溝道mosfetmi驅動(dong)電(dian)路pwm占空比大小和(he)電(dian)阻電(dian)容過濾器(qi)的(de)濾波作(zuo)用,控(kong)制施(shi)加到n溝道mosfetmi的(de)直流(liu)信(xin)號,使n溝道mosfetmi處于不(bu)(bu)導通(tong)狀態即off狀態,參(can)見圖4,此時,所(suo)(suo)有電(dian)池(chi)(chi)模塊bmi處于正(zheng)常模式,所(suo)(suo)有電(dian)池(chi)(chi)單體(ti)bi串聯連接組成(cheng)電(dian)池(chi)(chi)組,不(bu)(bu)需(xu)均(jun)衡和(he)重構;

2)若有電(dian)池(chi)(chi)單(dan)(dan)(dan)體(ti)bi需要均(jun)(jun)(jun)衡(heng),通過調節n溝道mosfetmi驅動電(dian)路pwm占空比大(da)小和電(dian)阻電(dian)容過濾(lv)器的(de)濾(lv)波作(zuo)用,使n溝道mosfetmi工作(zuo)在放大(da)區,因此(ci)均(jun)(jun)(jun)衡(heng)電(dian)流可以(yi)被控(kong)制且不需要為(wei)了耗散能(neng)量(liang)(liang)而添加電(dian)阻。參(can)見圖5,此(ci)時(shi)n溝道mosfetmi處于(yu)pwm狀(zhuang)態(tai),等效于(yu)一(yi)(yi)(yi)個開(kai)關和一(yi)(yi)(yi)個電(dian)阻的(de)串聯,對應的(de)熔斷絲fi等效于(yu)一(yi)(yi)(yi)個導體(ti),由此(ci),電(dian)池(chi)(chi)單(dan)(dan)(dan)體(ti)bi通過電(dian)阻消耗儲存(cun)的(de)能(neng)量(liang)(liang),實現單(dan)(dan)(dan)個電(dian)池(chi)(chi)單(dan)(dan)(dan)體(ti)bi的(de)均(jun)(jun)(jun)衡(heng);

參照(zhao)圖6,如果(guo)不止一個電(dian)(dian)池單(dan)體(ti)需(xu)要均(jun)衡(heng)(heng),則需(xu)要均(jun)衡(heng)(heng)的電(dian)(dian)池單(dan)體(ti)對應的n溝(gou)道(dao)mosfetmi都會工(gong)作在放大區,處于pwm狀態,分(fen)別等效于一個開關和一個電(dian)(dian)阻的串聯,多(duo)塊電(dian)(dian)池單(dan)體(ti)通過(guo)電(dian)(dian)阻消(xiao)耗能量,互不干擾,實現多(duo)個電(dian)(dian)池單(dan)體(ti)的均(jun)衡(heng)(heng);

若沒有電(dian)池單體bi需要均衡,則判斷是否有電(dian)池單體bi需要重(zhong)構,

3)若有電(dian)(dian)池(chi)(chi)單體(ti)(ti)bi失效需要(yao)重構,參見圖7,需要(yao)重構,則通(tong)過(guo)調節n溝道(dao)mosfetmi驅(qu)動電(dian)(dian)路pwm占(zhan)空比大小(xiao)和(he)電(dian)(dian)阻電(dian)(dian)容(rong)過(guo)濾器的(de)濾波(bo)作(zuo)用,控制施(shi)加(jia)到n溝道(dao)mosfetmi的(de)直流(liu)信(xin)號,使n溝道(dao)mosfetmi處于導(dao)通(tong)狀(zhuang)態(tai)即on狀(zhuang)態(tai),等效于一個開關,此時(shi),該電(dian)(dian)池(chi)(chi)模塊短路,由于短路電(dian)(dian)流(liu)非常大,會破壞該電(dian)(dian)池(chi)(chi)模塊熔斷絲fi,電(dian)(dian)池(chi)(chi)單體(ti)(ti)bi被電(dian)(dian)池(chi)(chi)組旁(pang)路,實現電(dian)(dian)池(chi)(chi)單體(ti)(ti)bi重構;

當不止一個電(dian)池(chi)單(dan)(dan)體(ti)bi需要(yao)重構(gou)時,參見(jian)圖8,每個需要(yao)重構(gou)的(de)(de)電(dian)池(chi)單(dan)(dan)體(ti)bi對應的(de)(de)mosfetmi均(jun)處于導通狀(zhuang)態即on狀(zhuang)態,等效(xiao)于開關(guan),相應的(de)(de)熔斷(duan)絲都(dou)會被破(po)壞,相應的(de)(de)電(dian)池(chi)單(dan)(dan)體(ti)都(dou)會被電(dian)池(chi)組(zu)旁路,實(shi)現電(dian)池(chi)組(zu)重構(gou);

若(ruo)沒有電(dian)池單體bi需要重構,則回到步(bu)驟2);

4)重復執行步驟2)和3),直至完成(cheng)對電池組中所有電池單體bi的(de)均(jun)衡(heng)和重構(gou),提高電池組的(de)性能。

綜上所述,本發(fa)明根據所提出(chu)的(de)(de)可(ke)重構均(jun)衡電路拓(tuo)撲結構實現了(le)無泄放(fang)電阻的(de)(de)被動均(jun)衡,以及電池組中的(de)(de)故障電池模(mo)塊被旁路,實現重構。在(zai)很好(hao)的(de)(de)保證串聯電池組的(de)(de)均(jun)衡功能(neng)并具有(you)(you)很好(hao)的(de)(de)重構功能(neng)的(de)(de)同時,有(you)(you)效的(de)(de)減少開關的(de)(de)使(shi)(shi)用(yong),使(shi)(shi)整個控制系統(tong)及其驅動系統(tong)都能(neng)得到相應的(de)(de)簡化,從(cong)而有(you)(you)效降低該電路的(de)(de)成本。

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