本發明(ming)涉及(ji)(ji)半導體領域，特別涉及(ji)(ji)電可編程熔絲(si)單(dan)元、陣列以及(ji)(ji)存儲單(dan)元。

背景技術：

在傳統的(de)(de)eFuse(電(dian)(dian)可編程熔絲)陣(zhen)(zhen)列(lie)中，為了(le)實現兼(jian)容性(xing)等，在eFuse陣(zhen)(zhen)列(lie)中的(de)(de)所(suo)有(you)(you)器(qi)件都是(shi)(shi)核心(xin)器(qi)件。以(yi)28納米為例，其(qi)核心(xin)器(qi)件可以(yi)用(yong)最小(xiao)28納米尺寸的(de)(de)器(qi)件。現有(you)(you)技術(shu)中有(you)(you)一(yi)些方法可以(yi)用(yong)來(lai)克服eFuse陣(zhen)(zhen)列(lie)的(de)(de)高(gao)(gao)編程電(dian)(dian)壓(ya)(ya)(ya)：(1)如果編程電(dian)(dian)壓(ya)(ya)(ya)不是(shi)(shi)很高(gao)(gao)，例如小(xiao)于核心(xin)電(dian)(dian)壓(ya)(ya)(ya)的(de)(de)2倍(bei)，可以(yi)通過限制編程次數(shu)來(lai)解決這個問題。由(you)于eFuse是(shi)(shi)一(yi)次編程器(qi)件，所(suo)以(yi)這已經(jing)不是(shi)(shi)問題；(2)當編程電(dian)(dian)壓(ya)(ya)(ya)太高(gao)(gao)時，可以(yi)使(shi)用(yong)LDO(Low dropout regulator，低(di)壓(ya)(ya)(ya)差線性(xing)穩壓(ya)(ya)(ya)器(qi))來(lai)將電(dian)(dian)壓(ya)(ya)(ya)降低(di)到可以(yi)接(jie)受的(de)(de)程度。但(dan)是(shi)(shi)由(you)于增加了(le)具(ju)有(you)(you)高(gao)(gao)電(dian)(dian)流(liu)的(de)(de)LDO，因(yin)此高(gao)(gao)編程電(dian)(dian)壓(ya)(ya)(ya)造成器(qi)件面積大(da)。

eFuse單元可以由電(dian)可編(bian)程熔絲和NMOS連接組成。這(zhe)里的(de)NMOS可以采用(yong)HVNMOS(高(gao)壓NMOS)。施加到HVNMOS的(de)柵極(ji)電(dian)壓等于(yu)編(bian)程電(dian)壓，這(zhe)造成NMOS面積(ji)越小，編(bian)程電(dian)壓越大(da)(da)，因此可以減小eFuse單元的(de)尺寸。但(dan)是由于(yu)HVNMOS面積(ji)大(da)(da)于(yu)核(he)心器件(jian)，造成這(zhe)樣的(de)eFuse陣列的(de)外圍電(dian)路將變得(de)比較大(da)(da)。然(ran)而，對于(yu)低(di)容量的(de)eFuse陣列，LDO占主導(dao)地(di)位；對于(yu)高(gao)容量的(de)eFuse陣列，eFuse單元尺寸占主導(dao)地(di)位，因此總的(de)尺寸還是節(jie)省許多。

由于流(liu)(liu)過(guo)非燒斷eFuse單元的(de)(de)電流(liu)(liu)及其(qi)持(chi)續時間(jian)必須(xu)小于最(zui)大讀(du)操(cao)作(zuo)(zuo)電流(liu)(liu)以(yi)及該(gai)最(zui)大讀(du)操(cao)作(zuo)(zuo)電流(liu)(liu)的(de)(de)持(chi)續時間(jian)，因此這將限制讀(du)操(cao)作(zuo)(zuo)的(de)(de)次(ci)數。

對于(yu)前面提及(ji)的(de)(de)帶有(you)(you)HVNMOS的(de)(de)eFuse單元，存(cun)儲在位(wei)線中(zhong)的(de)(de) 高(gao)電(dian)壓將影響(xiang)讀操作的(de)(de)最(zui)大次數和位(wei)線的(de)(de)長度(du)(即位(wei)線電(dian)容)。通過(guo)使用核(he)心器(qi)件很(hen)難(nan)減小(xiao)外(wai)圍(wei)電(dian)路，這是因(yin)為(wei)外(wai)圍(wei)電(dian)路包(bao)括：字線驅動(dong)器(qi)、通過(guo)柵極及(ji)其驅動(dong)器(qi)、PMOS開關及(ji)其驅動(dong)器(qi)，以及(ji)電(dian)平轉換器(qi)等。現有(you)(you)技術中(zhong)仍然使用LDO的(de)(de)解(jie)決方案來克服高(gao)容量(liang)和高(gao)編程(cheng)電(dian)壓對可靠性和面積的(de)(de)影響(xiang)。

技術實現要素：

本發明需(xu)要(yao)解決的一個技術問題是：減小現有的eFuse單元陣(zhen)列的面積。

根(gen)據(ju)本發明的(de)(de)第(di)(di)(di)一(yi)方面(mian)，提供(gong)了(le)一(yi)種電(dian)可(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲單(dan)元，包(bao)括：電(dian)可(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲、第(di)(di)(di)一(yi)二(er)(er)(er)極(ji)(ji)(ji)(ji)管和(he)第(di)(di)(di)二(er)(er)(er)二(er)(er)(er)極(ji)(ji)(ji)(ji)管；所(suo)述(shu)(shu)(shu)電(dian)可(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲包(bao)括：第(di)(di)(di)一(yi)端(duan)和(he)第(di)(di)(di)二(er)(er)(er)端(duan)；所(suo)述(shu)(shu)(shu)第(di)(di)(di)一(yi)二(er)(er)(er)極(ji)(ji)(ji)(ji)管的(de)(de)負極(ji)(ji)(ji)(ji)連(lian)接所(suo)述(shu)(shu)(shu)電(dian)可(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲的(de)(de)第(di)(di)(di)一(yi)端(duan)，所(suo)述(shu)(shu)(shu)第(di)(di)(di)一(yi)二(er)(er)(er)極(ji)(ji)(ji)(ji)管的(de)(de)正(zheng)極(ji)(ji)(ji)(ji)連(lian)接寫操作位線；所(suo)述(shu)(shu)(shu)第(di)(di)(di)二(er)(er)(er)二(er)(er)(er)極(ji)(ji)(ji)(ji)管的(de)(de)負極(ji)(ji)(ji)(ji)連(lian)接所(suo)述(shu)(shu)(shu)電(dian)可(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲的(de)(de)第(di)(di)(di)一(yi)端(duan)，所(suo)述(shu)(shu)(shu)第(di)(di)(di)二(er)(er)(er)二(er)(er)(er)極(ji)(ji)(ji)(ji)管的(de)(de)正(zheng)極(ji)(ji)(ji)(ji)連(lian)接讀操作位線；其(qi)中，所(suo)述(shu)(shu)(shu)電(dian)可(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲的(de)(de)第(di)(di)(di)二(er)(er)(er)端(duan)連(lian)接至(zhi)共(gong)享NMOSFET的(de)(de)漏極(ji)(ji)(ji)(ji)，所(suo)述(shu)(shu)(shu)共(gong)享NMOSFET的(de)(de)柵極(ji)(ji)(ji)(ji)連(lian)接字線，所(suo)述(shu)(shu)(shu)共(gong)享NMOSFET的(de)(de)源極(ji)(ji)(ji)(ji)接地。

在一(yi)些(xie)實(shi)施例中(zhong)，所(suo)(suo)述(shu)電(dian)可編程熔絲(si)單元還包括：讀(du)(du)操(cao)作(zuo)MOSFET，設(she)置在所(suo)(suo)述(shu)第(di)二(er)二(er)極管與所(suo)(suo)述(shu)讀(du)(du)操(cao)作(zuo)位(wei)線(xian)之間；其(qi)中(zhong)，所(suo)(suo)述(shu)讀(du)(du)操(cao)作(zuo)MOSFET的柵極連接讀(du)(du)操(cao)作(zuo)控制線(xian)。

在一(yi)些實施例(li)中(zhong)，所(suo)(suo)述讀(du)操作(zuo)(zuo)MOSFET為讀(du)操作(zuo)(zuo)NMOSFET；其中(zhong)，所(suo)(suo)述讀(du)操作(zuo)(zuo)NMOSFET的(de)源極(ji)連接所(suo)(suo)述第二(er)(er)二(er)(er)極(ji)管的(de)正極(ji)，所(suo)(suo)述讀(du)操作(zuo)(zuo)NMOSFET的(de)漏極(ji)連接所(suo)(suo)述讀(du)操作(zuo)(zuo)位線。

在一(yi)些實(shi)施例中，所(suo)述(shu)讀操作MOSFET為讀操作PMOSFET；其(qi)中，所(suo)述(shu)讀操作PMOSFET的(de)漏(lou)極(ji)(ji)連(lian)接所(suo)述(shu)第二二極(ji)(ji)管的(de)正極(ji)(ji)，所(suo)述(shu)讀操作PMOSFET的(de)源極(ji)(ji)連(lian)接所(suo)述(shu)讀操作位(wei)線。

根(gen)據(ju)本發明的(de)(de)第(di)(di)二方面，提供了一(yi)種電(dian)可(ke)編(bian)程熔絲(si)單元陣列，包括：n×m個(ge)如前所(suo)述(shu)電(dian)可(ke)編(bian)程熔絲(si)單元和n個(ge)共享NMOSFET；n≥1，且為(wei)正(zheng)(zheng)整(zheng)數(shu)；m≥1，且為(wei)正(zheng)(zheng)整(zheng)數(shu)；其中，第(di)(di)i行的(de)(de)電(dian)可(ke)編(bian)程熔 絲(si)單元的(de)(de)電(dian)可(ke)編(bian)程熔絲(si)的(de)(de)第(di)(di)二端(duan)連接至(zhi)第(di)(di)i個(ge)共享NMOSFET的(de)(de)漏(lou)極(ji)，所(suo)述(shu)第(di)(di)i個(ge)共享NMOSFET的(de)(de)柵(zha)極(ji)連接第(di)(di)i條字線，以及所(suo)述(shu)第(di)(di)i個(ge)共享NMOSFET的(de)(de)源(yuan)極(ji)接地(di)；1≤i≤n，且i為(wei)正(zheng)(zheng)整(zheng)數(shu)；第(di)(di)j列的(de)(de)電(dian)可(ke)編(bian)程熔絲(si)單元的(de)(de)第(di)(di)一(yi)二極(ji)管的(de)(de)正(zheng)(zheng)極(ji)連接第(di)(di)j條寫操作位線；1≤j≤m，且j為(wei)正(zheng)(zheng)整(zheng)數(shu)。

根據(ju)本(ben)發明(ming)的(de)(de)第三方面，提供(gong)了一種存儲單(dan)元(yuan)，包(bao)括(kuo)：如前所述電可(ke)編程(cheng)熔絲(si)單(dan)元(yuan)陣列(lie)、字線(xian)譯碼(ma)器、寫操作位(wei)(wei)(wei)線(xian)譯碼(ma)器以及m個(ge)(ge)位(wei)(wei)(wei)線(xian)PMOSFET；其中，所述字線(xian)譯碼(ma)器的(de)(de)第i個(ge)(ge)輸出端(duan)通過(guo)字線(xian)連(lian)接第i個(ge)(ge)共享NMOSFET的(de)(de)柵極(ji)；第j個(ge)(ge)位(wei)(wei)(wei)線(xian)PMOSFET的(de)(de)漏極(ji)通過(guo)第j條寫操作位(wei)(wei)(wei)線(xian)連(lian)接第j列(lie)的(de)(de)電可(ke)編程(cheng)熔絲(si)單(dan)元(yuan)的(de)(de)第一二極(ji)管的(de)(de)正極(ji)，所述第j個(ge)(ge)位(wei)(wei)(wei)線(xian)PMOSFET的(de)(de)源極(ji)連(lian)接寫操作電源，所述第j個(ge)(ge)位(wei)(wei)(wei)線(xian)PMOSFET的(de)(de)柵極(ji)連(lian)接至所述寫操作位(wei)(wei)(wei)線(xian)譯碼(ma)器的(de)(de)第j個(ge)(ge)輸出端(duan)。

在(zai)(zai)一些實(shi)施例(li)中，在(zai)(zai)各個電(dian)可編(bian)程熔絲(si)單元的第二二極管與相應的讀(du)操作(zuo)(zuo)位(wei)線(xian)之間設置(zhi)讀(du)操作(zuo)(zuo)MOSFET，所述(shu)讀(du)操作(zuo)(zuo)MOSFET的柵極連(lian)接讀(du)操作(zuo)(zuo)控制線(xian)；所述(shu)讀(du)操作(zuo)(zuo)位(wei)線(xian)連(lian)接讀(du)操作(zuo)(zuo)電(dian)源。

在一(yi)些實施例中(zhong)，所述(shu)存儲單(dan)元(yuan)還包括：讀操作(zuo)(zuo)單(dan)元(yuan)，其輸出端連(lian)接對(dui)應的讀操作(zuo)(zuo)控(kong)(kong)制線(xian)，通(tong)過所述(shu)對(dui)應的讀操作(zuo)(zuo)控(kong)(kong)制線(xian)輸出選(xuan)通(tong)信(xin)號至對(dui)應的讀操作(zuo)(zuo)MOSFET的柵極，以選(xuan)通(tong)所述(shu)對(dui)應的讀操作(zuo)(zuo)MOSFET。

根據本發明(ming)的第(di)四方面，提供了一種電(dian)(dian)可編程(cheng)熔絲(si)(si)單元(yuan)，包(bao)(bao)括：PNP型(xing)(xing)晶體管和(he)(he)電(dian)(dian)可編程(cheng)熔絲(si)(si)；所(suo)(suo)述(shu)(shu)(shu)電(dian)(dian)可編程(cheng)熔絲(si)(si)包(bao)(bao)括：第(di)一端(duan)(duan)和(he)(he)第(di)二端(duan)(duan)；所(suo)(suo)述(shu)(shu)(shu)PNP型(xing)(xing)晶體管包(bao)(bao)括：N型(xing)(xing)區(qu)(qu)(qu)域(yu)，以及分別鄰接(jie)在所(suo)(suo)述(shu)(shu)(shu)N型(xing)(xing)區(qu)(qu)(qu)域(yu)兩邊的第(di)一P型(xing)(xing)區(qu)(qu)(qu)域(yu)和(he)(he)第(di)二P型(xing)(xing)區(qu)(qu)(qu)域(yu)；所(suo)(suo)述(shu)(shu)(shu)N型(xing)(xing)區(qu)(qu)(qu)域(yu)連(lian)(lian)(lian)接(jie)所(suo)(suo)述(shu)(shu)(shu)電(dian)(dian)可編程(cheng)熔絲(si)(si)的第(di)一端(duan)(duan)，所(suo)(suo)述(shu)(shu)(shu)第(di)一P型(xing)(xing)區(qu)(qu)(qu)域(yu)連(lian)(lian)(lian)接(jie)寫(xie)操(cao)作位線，所(suo)(suo)述(shu)(shu)(shu)第(di)二P型(xing)(xing)區(qu)(qu)(qu)域(yu)連(lian)(lian)(lian)接(jie)讀操(cao)作位線；其中，所(suo)(suo)述(shu)(shu)(shu)電(dian)(dian)可編程(cheng)熔絲(si)(si)的第(di)二端(duan)(duan)連(lian)(lian)(lian)接(jie)至(zhi)共(gong)享NMOSFET的漏極，所(suo)(suo)述(shu)(shu)(shu)共(gong)享NMOSFET的柵(zha)極連(lian)(lian)(lian)接(jie)字線，所(suo)(suo)述(shu)(shu)(shu)共(gong)享NMOSFET的源(yuan)極接(jie)地。

在一些實施例中，所述電可編程熔絲單元還包括：讀(du)(du)操(cao)(cao)作MOSFET，設置在所述PNP型晶體管的第二P型區域與所述讀(du)(du)操(cao)(cao)作 位(wei)線之間；其中，所述讀(du)(du)操(cao)(cao)作MOSFET的柵極連接(jie)讀(du)(du)操(cao)(cao)作控制線。

在一(yi)些(xie)實(shi)施(shi)例中(zhong)，所述讀(du)操作MOSFET為讀(du)操作NMOSFET；其中(zhong)，所述讀(du)操作NMOSFET的(de)(de)源極(ji)(ji)連接(jie)所述第(di)二(er)P型(xing)區域，所述讀(du)操作NMOSFET的(de)(de)漏極(ji)(ji)連接(jie)所述讀(du)操作位線。

在一些實施例中，所(suo)述讀(du)(du)操(cao)作(zuo)(zuo)MOSFET為讀(du)(du)操(cao)作(zuo)(zuo)PMOSFET；其中，所(suo)述讀(du)(du)操(cao)作(zuo)(zuo)PMOSFET的漏極連(lian)接所(suo)述第二P型區域，所(suo)述讀(du)(du)操(cao)作(zuo)(zuo)PMOSFET的源極連(lian)接所(suo)述讀(du)(du)操(cao)作(zuo)(zuo)位線(xian)。

根據本發明(ming)的第(di)(di)五方面(mian)，提供了一種電(dian)(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)絲(si)單元陣列，包括(kuo)：n×m個如前所述電(dian)(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)絲(si)單元和n個共享(xiang)(xiang)NMOSFET；n≥1，且(qie)為(wei)正(zheng)(zheng)整(zheng)(zheng)數(shu)；m≥1，且(qie)為(wei)正(zheng)(zheng)整(zheng)(zheng)數(shu)；其中，第(di)(di)i行的電(dian)(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)絲(si)單元的電(dian)(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)絲(si)的第(di)(di)二端連接至第(di)(di)i個共享(xiang)(xiang)NMOSFET的漏(lou)極，所述第(di)(di)i個共享(xiang)(xiang)NMOSFET的柵極連接第(di)(di)i條字線，以及所述第(di)(di)i個共享(xiang)(xiang)NMOSFET的源極接地；1≤i≤n，且(qie)i為(wei)正(zheng)(zheng)整(zheng)(zheng)數(shu)；第(di)(di)j列的電(dian)(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)絲(si)單元的第(di)(di)一P型區域(yu)連接第(di)(di)j條寫操作位(wei)線；1≤j≤m，且(qie)j為(wei)正(zheng)(zheng)整(zheng)(zheng)數(shu)。

根據(ju)本發明的(de)第(di)(di)六方面，提供了一種(zhong)存儲單(dan)元，包括：如前所(suo)述(shu)電可(ke)編程(cheng)熔絲單(dan)元陣列(lie)、字(zi)線(xian)(xian)譯碼(ma)器(qi)、寫(xie)(xie)操作(zuo)位(wei)(wei)(wei)線(xian)(xian)譯碼(ma)器(qi)以及m個(ge)位(wei)(wei)(wei)線(xian)(xian)PMOSFET；其中，所(suo)述(shu)字(zi)線(xian)(xian)譯碼(ma)器(qi)的(de)第(di)(di)i個(ge)輸出(chu)端(duan)通過字(zi)線(xian)(xian)連(lian)接(jie)第(di)(di)i個(ge)共享NMOSFET的(de)柵(zha)極；第(di)(di)j個(ge)位(wei)(wei)(wei)線(xian)(xian)PMOSFET的(de)漏極通過第(di)(di)j條寫(xie)(xie)操作(zuo)位(wei)(wei)(wei)線(xian)(xian)連(lian)接(jie)第(di)(di)j列(lie)的(de)電可(ke)編程(cheng)熔絲單(dan)元的(de)第(di)(di)一P型區域，所(suo)述(shu)第(di)(di)j個(ge)位(wei)(wei)(wei)線(xian)(xian)PMOSFET的(de)源極連(lian)接(jie)寫(xie)(xie)操作(zuo)電源，所(suo)述(shu)第(di)(di)j個(ge)位(wei)(wei)(wei)線(xian)(xian)PMOSFET的(de)柵(zha)極連(lian)接(jie)至(zhi)所(suo)述(shu)寫(xie)(xie)操作(zuo)位(wei)(wei)(wei)線(xian)(xian)譯碼(ma)器(qi)的(de)第(di)(di)j個(ge)輸出(chu)端(duan)。

在一些實施例中，在各個電可編程熔(rong)絲單元(yuan)的(de)第二(er)P型區域(yu)與(yu)相應(ying)的(de)讀(du)(du)操作(zuo)(zuo)位線(xian)之(zhi)間(jian)設置讀(du)(du)操作(zuo)(zuo)MOSFET，所述讀(du)(du)操作(zuo)(zuo)MOSFET的(de)柵(zha)極連(lian)接(jie)讀(du)(du)操作(zuo)(zuo)控制線(xian)；所述讀(du)(du)操作(zuo)(zuo)位線(xian)連(lian)接(jie)讀(du)(du)操作(zuo)(zuo)電源。

在一些實施例(li)中，所述(shu)存儲單(dan)元(yuan)還包括：讀(du)操(cao)作單(dan)元(yuan)，其輸(shu)出(chu)端連接對應的(de)(de)讀(du)操(cao)作控制線，通(tong)(tong)過所述(shu)對應的(de)(de)讀(du)操(cao)作控制線輸(shu)出(chu)選通(tong)(tong)信號至對應的(de)(de)讀(du)操(cao)作MOSFET的(de)(de)柵極，以選通(tong)(tong)所述(shu)對應的(de)(de)讀(du)操(cao)作MOSFET。

本發明中，去掉了(le)現有技術中每個(ge)(ge)eFuse單(dan)(dan)元中的NMOS(該NMOS占據了(le)器件大(da)部分面(mian)積)，而使得每一行的電(dian)可(ke)編(bian)程(cheng)熔(rong)(rong)絲(si)單(dan)(dan)元(即(ji)利用同一字(zi)線的電(dian)可(ke)編(bian)程(cheng)熔(rong)(rong)絲(si)單(dan)(dan)元)使用一個(ge)(ge)共(gong)享的NMOSFET(例如HVNMOS)。雖然(ran)每個(ge)(ge)電(dian)可(ke)編(bian)程(cheng)熔(rong)(rong)絲(si)單(dan)(dan)元增加(jia)的兩個(ge)(ge)二(er)極(ji)管，但是整(zheng)體來看，電(dian)可(ke)編(bian)程(cheng)熔(rong)(rong)絲(si)單(dan)(dan)元陣列的總體面(mian)積得到減(jian)小(xiao)(xiao)，從而可(ke)以減(jian)小(xiao)(xiao)器件尺寸。也(ye)將(jiang)兩個(ge)(ge)二(er)極(ji)管合并成一個(ge)(ge)PNP型晶(jing)體管，可(ke)以進一步簡化結構并減(jian)小(xiao)(xiao)面(mian)積。

通過以下參照附(fu)圖對本(ben)發(fa)明的示例(li)性(xing)實施(shi)例(li)的詳細描(miao)述(shu)，本(ben)發(fa)明的其它特征(zheng)及其優點將會變得(de)清楚。

附圖說明

構成說明書(shu)(shu)的(de)(de)一(yi)部分的(de)(de)附圖描述了本(ben)發明的(de)(de)實施例，并且連(lian)同說明書(shu)(shu)一(yi)起用(yong)于(yu)解釋本(ben)發明的(de)(de)原理(li)。

參照附(fu)圖，根據下面的詳細描述，可以更加清楚地理解本(ben)發明，其中：

圖1是示意性地示出根據(ju)本(ben)發明一些實施例(li)的(de)(de)電可編程熔絲(si)單(dan)元陣列的(de)(de)電路連接圖。

圖2是示(shi)意性地示(shi)出根據本(ben)發(fa)明另一(yi)些實施例的電可編程熔絲單元陣列的電路連(lian)接圖。

圖3是示意性地示出根據本發明一些實施(shi)例(li)的(de)存儲單元的(de)電路連(lian)接圖。

圖4是示意性地示出根據(ju)本(ben)發明另一(yi)些實施例的(de)電(dian)可(ke)編程熔絲單元陣列的(de)電(dian)路連接圖。

圖(tu)5是示意性地示出根據本發明另一(yi)些實施(shi)例的電(dian)可(ke)編程熔絲(si)單元陣列的電(dian)路連(lian)接圖(tu)。

具體實施方式

現在將參照附圖(tu)來詳細描述(shu)本(ben)發(fa)明(ming)的(de)各種示例性實施例。應注意到：除非另外(wai)具(ju)體說明(ming)，否則在這(zhe)些(xie)實施例中闡(chan)述(shu)的(de)部件(jian)和(he)步(bu)驟的(de)相 對布置(zhi)、數(shu)字(zi)表達(da)式和(he)數(shu)值不限制本(ben)發(fa)明(ming)的(de)范(fan)圍。

同時，應當明白，為了便于描述，附圖(tu)中所示出(chu)的(de)各個部分(fen)的(de)尺寸并不是(shi)按(an)照實際(ji)的(de)比例(li)關系繪(hui)制的(de)。

以下對(dui)至少一個示例(li)性(xing)實(shi)施例(li)的(de)描述(shu)實(shi)際上僅僅是說明性(xing)的(de)，決不作為對(dui)本發明及(ji)其(qi)應用或使用的(de)任(ren)何限制。

對(dui)于(yu)相關領域普通技(ji)術人員已知的技(ji)術、方法(fa)和設(she)備可能不作詳細討論(lun)，但(dan)在適當情況下，所述技(ji)術、方法(fa)和設(she)備應當被視(shi)為授權說明書的一部分。

在這里示(shi)出和討論的所有示(shi)例(li)中，任何具體值應被解釋為僅(jin)僅(jin)是(shi)示(shi)例(li)性(xing)的，而不(bu)是(shi)作為限(xian)制。因此，示(shi)例(li)性(xing)實施例(li)的其它示(shi)例(li)可(ke)以(yi)具有不(bu)同的值。

應注意到：相似的標號和字母在下面(mian)的附(fu)圖(tu)(tu)中(zhong)表示(shi)類似項，因此，一(yi)旦某一(yi)項在一(yi)個附(fu)圖(tu)(tu)中(zhong)被定義，則(ze)在隨(sui)后的附(fu)圖(tu)(tu)中(zhong)不需要對其進行(xing)進一(yi)步討論。

圖1是(shi)示意性(xing)地示出(chu)根據本發明一(yi)些(xie)實(shi)施例(li)的(de)電(dian)(dian)可(ke)(ke)編(bian)程熔(rong)絲(si)單(dan)元(yuan)陣(zhen)列(lie)的(de)電(dian)(dian)路連接圖。該電(dian)(dian)可(ke)(ke)編(bian)程熔(rong)絲(si)單(dan)元(yuan)陣(zhen)列(lie)10包括：n×m個電(dian)(dian)可(ke)(ke)編(bian)程熔(rong)絲(si)單(dan)元(yuan)。下面以電(dian)(dian)可(ke)(ke)編(bian)程熔(rong)絲(si)單(dan)元(yuan)111為例(li)詳細介(jie)紹本發明一(yi)些(xie)實(shi)施例(li)的(de)電(dian)(dian)可(ke)(ke)編(bian)程熔(rong)絲(si)單(dan)元(yuan)。

如圖(tu)1所示，電(dian)(dian)(dian)可(ke)(ke)(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)單(dan)元111可(ke)(ke)(ke)(ke)以包(bao)(bao)括：電(dian)(dian)(dian)可(ke)(ke)(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)1110、第(di)(di)(di)一二(er)(er)極(ji)(ji)(ji)管(guan)(guan)1111和(he)第(di)(di)(di)二(er)(er)二(er)(er)極(ji)(ji)(ji)管(guan)(guan)1112。該電(dian)(dian)(dian)可(ke)(ke)(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)1110包(bao)(bao)括：第(di)(di)(di)一端(duan)(duan)11101和(he)第(di)(di)(di)二(er)(er)端(duan)(duan)11102。第(di)(di)(di)一二(er)(er)極(ji)(ji)(ji)管(guan)(guan)1111的(de)(de)(de)(de)負極(ji)(ji)(ji)連(lian)(lian)接(jie)(jie)(jie)(jie)(jie)電(dian)(dian)(dian)可(ke)(ke)(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)1110的(de)(de)(de)(de)第(di)(di)(di)一端(duan)(duan)11101，第(di)(di)(di)一二(er)(er)極(ji)(ji)(ji)管(guan)(guan)1111的(de)(de)(de)(de)正極(ji)(ji)(ji)連(lian)(lian)接(jie)(jie)(jie)(jie)(jie)寫操作位(wei)線(xian)BL1。第(di)(di)(di)二(er)(er)二(er)(er)極(ji)(ji)(ji)管(guan)(guan)1112的(de)(de)(de)(de)負極(ji)(ji)(ji)連(lian)(lian)接(jie)(jie)(jie)(jie)(jie)電(dian)(dian)(dian)可(ke)(ke)(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)1110的(de)(de)(de)(de)第(di)(di)(di)一端(duan)(duan)11101，第(di)(di)(di)二(er)(er)二(er)(er)極(ji)(ji)(ji)管(guan)(guan)1112的(de)(de)(de)(de)正極(ji)(ji)(ji)連(lian)(lian)接(jie)(jie)(jie)(jie)(jie)讀操作位(wei)線(xian)BL_RD11。電(dian)(dian)(dian)可(ke)(ke)(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)1110的(de)(de)(de)(de)第(di)(di)(di)二(er)(er)端(duan)(duan)11102連(lian)(lian)接(jie)(jie)(jie)(jie)(jie)至(zhi)共享NMOSFET(N型金屬氧(yang)化物半(ban)導體場效(xiao)應晶體管(guan)(guan))1114的(de)(de)(de)(de)漏(lou)極(ji)(ji)(ji)，該共享NMOSFET 1114的(de)(de)(de)(de)柵極(ji)(ji)(ji)連(lian)(lian)接(jie)(jie)(jie)(jie)(jie)字線(xian)WL1，該共享NMOSFET 1114的(de)(de)(de)(de)源(yuan)極(ji)(ji)(ji)接(jie)(jie)(jie)(jie)(jie)地(di)。圖(tu)1中的(de)(de)(de)(de)其他(ta)電(dian)(dian)(dian)可(ke)(ke)(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)單(dan)元與(yu)電(dian)(dian)(dian)可(ke)(ke)(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)單(dan)元111類(lei)似，這里(li)不再一一贅述。

在(zai)本發(fa)明的上(shang)述實(shi)施例中(zhong)(zhong)，去掉了現有技(ji)術中(zhong)(zhong)每(mei)個(ge)eFuse單(dan)元中(zhong)(zhong) 的NMOS(該NMOS占據了器(qi)件(jian)大部分(fen)面積(ji)(ji))，而使得(de)每(mei)一行的電可(ke)(ke)編(bian)程熔(rong)絲單(dan)元(即利用同(tong)一字(zi)線的電可(ke)(ke)編(bian)程熔(rong)絲單(dan)元)使用一個(ge)共享(xiang)的NMOSFET(例如HVNMOS)。雖然每(mei)個(ge)電可(ke)(ke)編(bian)程熔(rong)絲單(dan)元增加的兩個(ge)二(er)極管，但是整體來(lai)看(kan)，電可(ke)(ke)編(bian)程熔(rong)絲單(dan)元陣列的總體面積(ji)(ji)得(de)到減小(xiao)，從(cong)而可(ke)(ke)以(yi)減小(xiao)器(qi)件(jian)尺寸。

在(zai)(zai)一些(xie)實施例(li)中(zhong)，核(he)心器(qi)(qi)件(jian)的中(zhong)心電壓可以(yi)為1.05V，超(chao)過1.26V可能會有可靠性的問題，例(li)如中(zhong)心電壓1.8V的器(qi)(qi)件(jian)不能作為核(he)心器(qi)(qi)件(jian)，由于在(zai)(zai)讀操作時中(zhong)心電壓為1.05V，所以(yi)二極管以(yi)及其他相關聯的電路均可以(yi)使(shi)用核(he)心器(qi)(qi)件(jian)來(lai)代替，因此這也可以(yi)顯著減(jian)小器(qi)(qi)件(jian)面積。

當進(jin)(jin)行寫(xie)操(cao)(cao)作(zuo)時(shi)，例如對電(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)(rong)絲(si)(si)單元111進(jin)(jin)行寫(xie)操(cao)(cao)作(zuo)，則(ze)第一條寫(xie)操(cao)(cao)作(zuo)位線BL1連接(jie)高電(dian)平(ping)，第一條字線WL1連接(jie)高電(dian)平(ping)，則(ze)共享NMOSFET 1114導通，有(you)寫(xie)操(cao)(cao)作(zuo)電(dian)流(liu)流(liu)過寫(xie)操(cao)(cao)作(zuo)位線BL1、第一二(er)極管(guan)1111、電(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)(rong)絲(si)(si)1110和(he)共享NMOSFET 1114。流(liu)過電(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)(rong)絲(si)(si)1110的電(dian)流(liu)將電(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)(rong)絲(si)(si)1110“燒(shao)斷”(這里“燒(shao)斷”是指電(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)(rong)絲(si)(si)的阻(zu)值增加幾個量級)，從(cong)而可(ke)(ke)以(yi)認為(wei)在電(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)(rong)絲(si)(si)單元111中存(cun)儲了數字“1”。其他電(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)(rong)絲(si)(si)單元的寫(xie)操(cao)(cao)作(zuo)類(lei)似，這里不(bu)再一一贅述。在寫(xie)操(cao)(cao)作(zuo)時(shi)，需(xu)要電(dian)流(liu)流(liu)經電(dian)可(ke)(ke)編(bian)(bian)程(cheng)熔(rong)(rong)(rong)絲(si)(si)的方(fang)(fang)向(xiang)是固定(ding)的，以(yi)產生電(dian)子遷移(Electron Migration，EM)效(xiao)應。利用第一二(er)極管(guan)的單向(xiang)導通特(te)性，使得(de)電(dian)流(liu)流(liu)經的方(fang)(fang)向(xiang)無論(lun)何時(shi)均是所需(xu)要的固定(ding)方(fang)(fang)向(xiang)。

當進行(xing)寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)時，有(you)些電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)不(bu)(bu)需要(yao)(yao)進行(xing)寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)，這(zhe)時第(di)一(yi)二極管可(ke)(ke)(ke)(ke)(ke)(ke)(ke)以(yi)(yi)抑制反向電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)，例(li)如(ru)(ru)(ru)如(ru)(ru)(ru)圖1所(suo)示，假如(ru)(ru)(ru)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)(dan)元(yuan)(yuan)111需要(yao)(yao)寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)而(er)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)(dan)元(yuan)(yuan)11j(例(li)如(ru)(ru)(ru)j等于2)不(bu)(bu)需要(yao)(yao)進行(xing)寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)，這(zhe)時寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)流(liu)(liu)經寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)位(wei)(wei)(wei)(wei)線(xian)BL1、第(di)一(yi)二極管1111、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)1110，如(ru)(ru)(ru)果(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)(dan)元(yuan)(yuan)11j中(zhong)沒有(you)設置第(di)一(yi)二極管，并且如(ru)(ru)(ru)果(guo)寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓例(li)如(ru)(ru)(ru)是(shi)5V，則第(di)j條(tiao)(tiao)寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)位(wei)(wei)(wei)(wei)線(xian)BLj將(jiang)與電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)1110的(de)(de)(de)(de)(de)第(di)二端(duan)11102的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)位(wei)(wei)(wei)(wei)一(yi)樣(yang)，例(li)如(ru)(ru)(ru)均(jun)為(wei)(wei)1V；所(suo)以(yi)(yi)如(ru)(ru)(ru)果(guo)對電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)(dan)元(yuan)(yuan)111的(de)(de)(de)(de)(de)寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)不(bu)(bu)是(shi)第(di)一(yi)次寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)， 則由于第(di)j條(tiao)(tiao)寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)位(wei)(wei)(wei)(wei)線(xian)BLj電(dian)(dian)(dian)(dian)(dian)(dian)(dian)位(wei)(wei)(wei)(wei)為(wei)(wei)1V，造(zao)成經過電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)1110的(de)(de)(de)(de)(de)寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)將(jiang)經過連線(xian)流(liu)(liu)入電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)(dan)元(yuan)(yuan)11j的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)，從而(er)對電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)(dan)元(yuan)(yuan)11j的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)造(zao)成損(sun)壞，而(er)由于電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)(dan)元(yuan)(yuan)11j中(zhong)設置了第(di)一(yi)二極管，因此第(di)j條(tiao)(tiao)寫(xie)(xie)(xie)操(cao)作(zuo)(zuo)(zuo)位(wei)(wei)(wei)(wei)線(xian)BLj的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)位(wei)(wei)(wei)(wei)不(bu)(bu)與第(di)二端(duan)11102的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)位(wei)(wei)(wei)(wei)一(yi)樣(yang)，而(er)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)以(yi)(yi)保持在初始狀態，可(ke)(ke)(ke)(ke)(ke)(ke)(ke)以(yi)(yi)防止(zhi)對不(bu)(bu)需要(yao)(yao)燒斷的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)(ke)(ke)編(bian)(bian)(bian)(bian)(bian)(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)造(zao)成損(sun)壞。

當(dang)進行讀操(cao)(cao)(cao)作(zuo)時(shi)，例如對(dui)電(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)編(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)(si)單(dan)(dan)元111進行讀操(cao)(cao)(cao)作(zuo)，則(ze)第(di)一條(tiao)讀操(cao)(cao)(cao)作(zuo)位(wei)(wei)線(xian)BL_RD11連接高電(dian)(dian)(dian)(dian)(dian)(dian)平(ping)(ping)，第(di)一條(tiao)字線(xian)WL1連接高電(dian)(dian)(dian)(dian)(dian)(dian)平(ping)(ping)，則(ze)共享(xiang)NMOSFET 1114導通(tong)，有讀操(cao)(cao)(cao)作(zuo)電(dian)(dian)(dian)(dian)(dian)(dian)流流過(guo)讀操(cao)(cao)(cao)作(zuo)位(wei)(wei)線(xian)BL_RD11、第(di)二二極管1112、電(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)編(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)(si)1110和共享(xiang)NMOSFET 1114。通(tong)過(guo)使得(de)該讀操(cao)(cao)(cao)作(zuo)電(dian)(dian)(dian)(dian)(dian)(dian)流流經電(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)編(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)(si)，可(ke)(ke)(ke)(ke)(ke)以(yi)(yi)獲(huo)得(de)該電(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)編(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)(si)的(de)電(dian)(dian)(dian)(dian)(dian)(dian)阻，從而(er)得(de)到該電(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)編(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)(si)是否(fou)已經“燒斷(duan)”，從而(er)讀出電(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)編(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)(si)單(dan)(dan)元存(cun)儲的(de)是“1”還是“0”。由于讀操(cao)(cao)(cao)作(zuo)電(dian)(dian)(dian)(dian)(dian)(dian)流可(ke)(ke)(ke)(ke)(ke)以(yi)(yi)很小，因此對(dui)于沒有存(cun)儲“1”的(de)電(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)編(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)(si)單(dan)(dan)元，不(bu)會將電(dian)(dian)(dian)(dian)(dian)(dian)可(ke)(ke)(ke)(ke)(ke)編(bian)(bian)程(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)(si)“燒斷(duan)”。例如，若寫(xie)操(cao)(cao)(cao)作(zuo)電(dian)(dian)(dian)(dian)(dian)(dian)流是100個單(dan)(dan)位(wei)(wei)，那(nei)么讀操(cao)(cao)(cao)作(zuo)的(de)最(zui)大(da)電(dian)(dian)(dian)(dian)(dian)(dian)流約(yue)(yue)10個單(dan)(dan)位(wei)(wei)，保證測量時(shi)不(bu)損(sun)壞(huai)的(de)最(zui)大(da)電(dian)(dian)(dian)(dian)(dian)(dian)流大(da)約(yue)(yue)是1個單(dan)(dan)位(wei)(wei)，所以(yi)(yi)只(zhi)要保證在讀操(cao)(cao)(cao)作(zuo)時(shi)的(de)最(zui)大(da)電(dian)(dian)(dian)(dian)(dian)(dian)流不(bu)大(da)于測量電(dian)(dian)(dian)(dian)(dian)(dian)流，就可(ke)(ke)(ke)(ke)(ke)以(yi)(yi)無限次地讀取資(zi)料(liao)。

在讀操作(zuo)時，可(ke)(ke)編程熔絲(si)(si)單元陣(zhen)列(lie)(lie)是一個記憶(yi)體陣(zhen)列(lie)(lie)，同一條位線連(lian)接多(duo)個可(ke)(ke)編程熔絲(si)(si)單元。在讀操作(zuo)時，現有技術(shu)中(zhong)的(de)(de)單元陣(zhen)列(lie)(lie)連(lian)接一條長的(de)(de)金屬線電容(串接可(ke)(ke)編程熔絲(si)(si)單元)以(yi)及(ji)很多(duo)單元里(li)的(de)(de)下(xia)拉NMOS。本(ben)發明中(zhong)利用第一二極管單向導通的(de)(de)特(te)性，截斷了金屬線電容和其他(ta)單元里(li)的(de)(de)下(xia)拉NMOS。由于電容減(jian)少，所以(yi)讀操作(zuo)的(de)(de)速(su)度可(ke)(ke)以(yi)加快。

在(zai)本(ben)發明中，在(zai)寫(xie)操(cao)(cao)作(zuo)時，由于(yu)第(di)一(yi)二極(ji)管(guan)是(shi)(shi)導(dao)(dao)通的(de)(de)，而(er)第(di)二二極(ji)管(guan)是(shi)(shi)反(fan)向無法(fa)導(dao)(dao)通的(de)(de)，因此不會經過讀操(cao)(cao)作(zuo)的(de)(de)路(lu)徑(jing)去干(gan)擾到其他(ta)的(de)(de)可編程熔絲單元(yuan)。反(fan)之在(zai)讀操(cao)(cao)作(zuo)時，第(di)二二極(ji)管(guan)是(shi)(shi)導(dao)(dao)通的(de)(de)，而(er)第(di)一(yi)二極(ji)管(guan)是(shi)(shi)反(fan)向無法(fa)導(dao)(dao)通的(de)(de)，因此不會經過寫(xie)操(cao)(cao)作(zuo)的(de)(de)路(lu)徑(jing)去干(gan)擾到其他(ta)的(de)(de)可編程熔絲單元(yuan)。

圖2是示(shi)意(yi)性地(di)示(shi)出根(gen)據本發明另一些實(shi)施(shi)例的電可(ke)編程(cheng)熔絲單(dan)元(yuan)(yuan)陣列的電路連(lian)接圖。電可(ke)編程(cheng)熔絲單(dan)元(yuan)(yuan)陣列20包(bao)括：n×m個電可(ke)編程(cheng)熔絲單(dan)元(yuan)(yuan)。

如圖2所(suo)示，以(yi)電(dian)(dian)(dian)(dian)可(ke)(ke)編程(cheng)(cheng)熔(rong)(rong)絲(si)(si)單元(yuan)(yuan)211為例，電(dian)(dian)(dian)(dian)可(ke)(ke)編程(cheng)(cheng)熔(rong)(rong)絲(si)(si)單元(yuan)(yuan)211可(ke)(ke)以(yi)包括：電(dian)(dian)(dian)(dian)可(ke)(ke)編程(cheng)(cheng)熔(rong)(rong)絲(si)(si)1110、第一(yi)二極管1111和第二二極管1112。電(dian)(dian)(dian)(dian)可(ke)(ke)編程(cheng)(cheng)熔(rong)(rong)絲(si)(si)單元(yuan)(yuan)211還可(ke)(ke)以(yi)包括：讀操(cao)(cao)作(zuo)(zuo)MOSFET 2115，設置在第二二極管1112與(yu)讀操(cao)(cao)作(zuo)(zuo)位線BL_RD11之間(jian)。其(qi)中(zhong)，該讀操(cao)(cao)作(zuo)(zuo)MOSFET 2115的柵(zha)極連接讀操(cao)(cao)作(zuo)(zuo)控制線RD11。圖2中(zhong)的其(qi)他(ta)電(dian)(dian)(dian)(dian)可(ke)(ke)編程(cheng)(cheng)熔(rong)(rong)絲(si)(si)單元(yuan)(yuan)與(yu)電(dian)(dian)(dian)(dian)可(ke)(ke)編程(cheng)(cheng)熔(rong)(rong)絲(si)(si)單元(yuan)(yuan)211類似，也設置了讀操(cao)(cao)作(zuo)(zuo)MOSFET，這里不再一(yi)一(yi)贅述。

在一(yi)些實施例(li)(li)(li)中，讀操作(zuo)(zuo)(zuo)MOSFET為讀操作(zuo)(zuo)(zuo)NMOSFET(例(li)(li)(li)如(ru)如(ru)圖2所示)。其中，讀操作(zuo)(zuo)(zuo)NMOSFET的源極(ji)(ji)(ji)連接第二(er)二(er)極(ji)(ji)(ji)管(例(li)(li)(li)如(ru)第二(er)二(er)極(ji)(ji)(ji)管112)的正極(ji)(ji)(ji)，讀操作(zuo)(zuo)(zuo)NMOSFET的漏極(ji)(ji)(ji)連接讀操作(zuo)(zuo)(zuo)位(wei)線(例(li)(li)(li)如(ru)讀操作(zuo)(zuo)(zuo)位(wei)線BL_RD11)。

在另一些實施例(li)中，讀(du)(du)(du)操(cao)(cao)作(zuo)(zuo)MOSFET為讀(du)(du)(du)操(cao)(cao)作(zuo)(zuo)PMOSFET。其中，讀(du)(du)(du)操(cao)(cao)作(zuo)(zuo)PMOSFET的(de)(de)(de)漏(lou)極(ji)(ji)連(lian)接(jie)第(di)二(er)(er)二(er)(er)極(ji)(ji)管(例(li)如第(di)二(er)(er)二(er)(er)極(ji)(ji)管112)的(de)(de)(de)正(zheng)極(ji)(ji)，讀(du)(du)(du)操(cao)(cao)作(zuo)(zuo)PMOSFET的(de)(de)(de)源極(ji)(ji)連(lian)接(jie)讀(du)(du)(du)操(cao)(cao)作(zuo)(zuo)位線(例(li)如讀(du)(du)(du)操(cao)(cao)作(zuo)(zuo)位線BL_RD11)。

在(zai)(zai)本發(fa)明的(de)上述實施例中，雖然在(zai)(zai)每(mei)個電可編(bian)(bian)程熔絲(si)單(dan)元中設(she)置了讀(du)(du)(du)操(cao)(cao)作(zuo)MOSFET，但是由(you)于(yu)每(mei)一(yi)行(xing)電可編(bian)(bian)程熔絲(si)單(dan)元使用一(yi)個共享的(de)NMOSFET，使得對于(yu)整個陣列來說，總體(ti)的(de)面積依然要小(xiao)于(yu)現(xian)有技術中的(de)陣列面積。增加的(de)讀(du)(du)(du)操(cao)(cao)作(zuo)MOSFET可以用來選擇需要讀(du)(du)(du)取(qu)的(de)電可編(bian)(bian)程熔絲(si)單(dan)元。

本(ben)發(fa)明(ming)的(de)實施例中(zhong)(zhong)，將(jiang)現有技術(shu)中(zhong)(zhong)的(de)HVNMOS減(jian)小(xiao)為本(ben)發(fa)明(ming)的(de)讀(du)(du)操(cao)作(zuo)MOSFET，(例如(ru)，與高速(su)(su)靜(jing)態(tai)儲存(cun)器(qi)相類似(si)的(de)NMOS)。現有技術(shu)中(zhong)(zhong)讀(du)(du)速(su)(su)度(du)比(bi)(bi)較(jiao)緩慢的(de)原因是由于字(zi)線(xian)負載(例如(ru)字(zi)線(xian)NMOS/HVNMOS)太(tai)大，造成(cheng)開啟(qi)時間(jian)太(tai)慢。而本(ben)發(fa)明(ming)中(zhong)(zhong)將(jiang)原來的(de)HVNMOS減(jian)小(xiao)，并且讀(du)(du)電(dian)流比(bi)(bi)較(jiao)大(下拉HVNMOS比(bi)(bi)較(jiao)大)，可(ke)以得到比(bi)(bi)高速(su)(su)靜(jing)態(tai)儲存(cun)器(qi)更快的(de)速(su)(su)度(du)。

在讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)時，讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)位(wei)線(xian)連接高(gao)電(dian)(dian)(dian)平，字線(xian)連接高(gao)電(dian)(dian)(dian)平，當對(dui)需要讀(du)(du)(du)(du)(du)取的電(dian)(dian)(dian)可編程(cheng)熔(rong)絲單元進行讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)時，例如(ru)當需要對(dui)電(dian)(dian)(dian)可編程(cheng)熔(rong)絲單元211進行讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)時，若(ruo)讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)MOSFET為(wei)讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)NMOSFET，可以(yi)使(shi)讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)控制(zhi)(zhi)線(xian)RD11連接高(gao)電(dian)(dian)(dian)平，以(yi)選通讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)NMOSFET，從而(er)(er)使(shi)讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)電(dian)(dian)(dian)流(liu)流(liu)過可編程(cheng)熔(rong)絲1110；若(ruo)讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)MOSFET為(wei)讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)PMOSFET，可以(yi)使(shi)讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)控制(zhi)(zhi)線(xian)RD11連接低(di)電(dian)(dian)(dian)平，以(yi)選通讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)PMOSFET，從而(er)(er)使(shi)得(de)讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)電(dian)(dian)(dian)流(liu)流(liu)過可編程(cheng)熔(rong)絲1110，從而(er)(er)實現讀(du)(du)(du)(du)(du)操(cao)(cao)(cao)(cao)(cao)作(zuo)(zuo)。

本發明一些(xie)實施例的(de)(de)(de)(de)電(dian)可(ke)(ke)編(bian)(bian)程(cheng)(cheng)(cheng)熔(rong)(rong)(rong)(rong)絲(si)單元(yuan)陣列(lie)(例如(ru)，如(ru)圖(tu)1所(suo)示(shi)(shi)的(de)(de)(de)(de)電(dian)可(ke)(ke)編(bian)(bian)程(cheng)(cheng)(cheng)熔(rong)(rong)(rong)(rong)絲(si)單元(yuan)陣列(lie)10或者如(ru)圖(tu)2所(suo)示(shi)(shi)的(de)(de)(de)(de)電(dian)可(ke)(ke)編(bian)(bian)程(cheng)(cheng)(cheng)熔(rong)(rong)(rong)(rong)絲(si)單元(yuan)陣列(lie)20)可(ke)(ke)以包括：n×m個(ge)前面所(suo)述電(dian)可(ke)(ke)編(bian)(bian)程(cheng)(cheng)(cheng)熔(rong)(rong)(rong)(rong)絲(si)單元(yuan)和n個(ge)共享NMOSFET；n≥1，且(qie)為正(zheng)(zheng)(zheng)整(zheng)數(shu)；m≥1，且(qie)為正(zheng)(zheng)(zheng)整(zheng)數(shu)，如(ru)圖(tu)1或圖(tu)2所(suo)示(shi)(shi)。其中(zhong)，第(di)(di)(di)i行(xing)的(de)(de)(de)(de)電(dian)可(ke)(ke)編(bian)(bian)程(cheng)(cheng)(cheng)熔(rong)(rong)(rong)(rong)絲(si)單元(yuan)的(de)(de)(de)(de)電(dian)可(ke)(ke)編(bian)(bian)程(cheng)(cheng)(cheng)熔(rong)(rong)(rong)(rong)絲(si)的(de)(de)(de)(de)第(di)(di)(di)二端連(lian)(lian)接至(zhi)第(di)(di)(di)i個(ge)共享NMOSFET的(de)(de)(de)(de)漏極(ji)(ji)(ji)。該(gai)第(di)(di)(di)i個(ge)共享NMOSFET的(de)(de)(de)(de)柵極(ji)(ji)(ji)連(lian)(lian)接第(di)(di)(di)i條字線(xian)WLi，以及該(gai)第(di)(di)(di)i個(ge)共享NMOSFET的(de)(de)(de)(de)源極(ji)(ji)(ji)接地；1≤i≤n，且(qie)i為正(zheng)(zheng)(zheng)整(zheng)數(shu)。第(di)(di)(di)j列(lie)的(de)(de)(de)(de)電(dian)可(ke)(ke)編(bian)(bian)程(cheng)(cheng)(cheng)熔(rong)(rong)(rong)(rong)絲(si)單元(yuan)的(de)(de)(de)(de)第(di)(di)(di)一二極(ji)(ji)(ji)管的(de)(de)(de)(de)正(zheng)(zheng)(zheng)極(ji)(ji)(ji)連(lian)(lian)接第(di)(di)(di)j條寫操作位線(xian)BLj；1≤j≤m，且(qie)j為正(zheng)(zheng)(zheng)整(zheng)數(shu)。

如圖1或圖2所示，每一(yi)(yi)行的(de)電可(ke)編程(cheng)熔絲單元經一(yi)(yi)個共享NMOSFET連(lian)接同一(yi)(yi)條(tiao)字線(xian)(xian)，每一(yi)(yi)列的(de)電可(ke)編程(cheng)熔絲單元連(lian)接同一(yi)(yi)條(tiao)寫操(cao)(cao)作位(wei)(wei)線(xian)(xian)。通過(guo)使得某(mou)一(yi)(yi)條(tiao)字線(xian)(xian)和某(mou)一(yi)(yi)條(tiao)寫操(cao)(cao)作位(wei)(wei)線(xian)(xian)均連(lian)接高電平，以對連(lian)接該條(tiao)字線(xian)(xian)和該條(tiao)寫操(cao)(cao)作位(wei)(wei)線(xian)(xian)的(de)電可(ke)編程(cheng)熔絲單元進行寫操(cao)(cao)作。

圖(tu)3是示(shi)意性地示(shi)出根據本發明一(yi)些實(shi)施例的存(cun)儲單(dan)(dan)元的電路連(lian)接(jie)圖(tu)。如圖(tu)3所示(shi)，存(cun)儲單(dan)(dan)元30包(bao)括：電可(ke)(ke)編程熔絲(si)單(dan)(dan)元陣列(包(bao)括n×m個電可(ke)(ke)編程熔絲(si)單(dan)(dan)元組成的陣列301和n個共享(xiang)NMOSFET，例如共享(xiang)NMOSFET 3051至(zhi)305n等)、字線(xian)譯碼器302、寫操作位(wei)線(xian)譯碼器303以及m個位(wei)線(xian)PMOSFET(例如位(wei)線(xian)PMOSFET 3041至(zhi)304m等)。

在一(yi)些實施(shi)例中，對于(yu)這(zhe)里(li)的(de)(de)(de)n×m個(ge)(ge)電(dian)可編(bian)程熔絲(si)(si)單(dan)元(yuan)，每個(ge)(ge) 電(dian)可編(bian)程熔絲(si)(si)單(dan)元(yuan)包含：電(dian)可編(bian)程熔絲(si)(si)、第(di)(di)一(yi)二極管(guan)和第(di)(di)二二極管(guan)。字(zi)線譯碼器302的(de)(de)(de)第(di)(di)i個(ge)(ge)輸出端(duan)通(tong)過(guo)字(zi)線WLi連接(jie)第(di)(di)i個(ge)(ge)共(gong)享NMOSFET的(de)(de)(de)柵極(1≤i≤n，且i為正(zheng)整數(shu))。第(di)(di)j個(ge)(ge)位(wei)線PMOSFET 304j的(de)(de)(de)漏極通(tong)過(guo)第(di)(di)j條寫(xie)操(cao)作位(wei)線BLj連接(jie)第(di)(di)j列的(de)(de)(de)電(dian)可編(bian)程熔絲(si)(si)單(dan)元(yuan)的(de)(de)(de)第(di)(di)一(yi)二極管(guan)(圖3中未示出)的(de)(de)(de)正(zheng)極(1≤j≤m，且j為正(zheng)整數(shu))。該第(di)(di)j個(ge)(ge)位(wei)線PMOSFET 304j的(de)(de)(de)源極連接(jie)寫(xie)操(cao)作電(dian)源VDD。該第(di)(di)j個(ge)(ge)位(wei)線PMOSFET 304j的(de)(de)(de)柵極連接(jie)至寫(xie)操(cao)作位(wei)線譯碼器303的(de)(de)(de)第(di)(di)j個(ge)(ge)輸出端(duan)。

在進行(xing)寫(xie)操(cao)作(zuo)(zuo)時，例如對(dui)連(lian)接第(di)i條字(zi)線(xian)(xian)WLi和第(di)j條寫(xie)操(cao)作(zuo)(zuo)位線(xian)(xian)BLj的(de)(de)(de)電可編程(cheng)熔(rong)絲單(dan)元執(zhi)行(xing)寫(xie)操(cao)作(zuo)(zuo)，寫(xie)操(cao)作(zuo)(zuo)位線(xian)(xian)譯碼器(qi)303的(de)(de)(de)第(di)j個(ge)(ge)輸出端輸出低電平至(zhi)(zhi)第(di)j個(ge)(ge)位線(xian)(xian)PMOSFET 304j的(de)(de)(de)柵極，使得該第(di)j個(ge)(ge)位線(xian)(xian)PMOSFET 304j的(de)(de)(de)源(yuan)(yuan)極和漏極導通；并(bing)且字(zi)線(xian)(xian)譯碼器(qi)302的(de)(de)(de)第(di)i個(ge)(ge)輸出端輸出高電平至(zhi)(zhi)第(di)i個(ge)(ge)共(gong)享NMOSFET的(de)(de)(de)柵極，使得該第(di)i個(ge)(ge)共(gong)享NMOSFET的(de)(de)(de)源(yuan)(yuan)極和漏極導通，從而實現對(dui)所期望的(de)(de)(de)電可編程(cheng)熔(rong)絲單(dan)元的(de)(de)(de)寫(xie)操(cao)作(zuo)(zuo)。

在(zai)一些實施例(li)中(zhong)(zhong)(zhong)，在(zai)圖(tu)3中(zhong)(zhong)(zhong)可以采用圖(tu)2所示(shi)的(de)(de)電(dian)可編程熔(rong)(rong)絲(si)單元陣列20。即(ji)在(zai)各個電(dian)可編程熔(rong)(rong)絲(si)單元的(de)(de)第二二極管與相應的(de)(de)讀(du)操(cao)作位(wei)線(xian)之間設(she)置讀(du)操(cao)作MOSFET(圖(tu)3中(zhong)(zhong)(zhong)未(wei)示(shi)出)，該(gai)讀(du)操(cao)作MOSFET的(de)(de)柵極連接(jie)讀(du)操(cao)作控(kong)制線(xian)(例(li)如(ru)讀(du)操(cao)作控(kong)制線(xian)RD11至RDnm等)；讀(du)操(cao)作位(wei)線(xian)連接(jie)讀(du)操(cao)作電(dian)源(圖(tu)3中(zhong)(zhong)(zhong)未(wei)示(shi)出)，用來為(wei)讀(du)操(cao)作位(wei)線(xian)提供高電(dian)平(ping)。

如(ru)(ru)圖3所(suo)示，存(cun)儲(chu)單(dan)(dan)元30還可(ke)以(yi)(yi)包括：讀(du)(du)操(cao)作(zuo)(zuo)(zuo)單(dan)(dan)元306，其輸出(chu)端連接(jie)對(dui)應(ying)的(de)(de)(de)讀(du)(du)操(cao)作(zuo)(zuo)(zuo)控制線(xian)(例如(ru)(ru)每(mei)個輸出(chu)端分(fen)別連接(jie)讀(du)(du)操(cao)作(zuo)(zuo)(zuo)控制線(xian)RD11至(zhi)RDnm中的(de)(de)(de)每(mei)一個)，通過(guo)對(dui)應(ying)的(de)(de)(de)讀(du)(du)操(cao)作(zuo)(zuo)(zuo)控制線(xian)輸出(chu)選(xuan)通信號至(zhi)對(dui)應(ying)的(de)(de)(de)讀(du)(du)操(cao)作(zuo)(zuo)(zuo)MOSFET的(de)(de)(de)柵極，以(yi)(yi)選(xuan)通該讀(du)(du)操(cao)作(zuo)(zuo)(zuo)MOSFET，并且字(zi)線(xian)譯碼器向所(suo)期望的(de)(de)(de)共享NMOSFET輸出(chu)高電平，從而可(ke)以(yi)(yi)使(shi)得讀(du)(du)操(cao)作(zuo)(zuo)(zuo)電流(liu)經(jing)過(guo)被選(xuan)通的(de)(de)(de)讀(du)(du)操(cao)作(zuo)(zuo)(zuo)MOSFET并且流(liu)經(jing)對(dui)應(ying)的(de)(de)(de)電可(ke)編程熔絲，以(yi)(yi)進行讀(du)(du)操(cao)作(zuo)(zuo)(zuo)。

在另一些(xie)實施(shi)例(li)中(zhong)，在圖(tu)3中(zhong)也可以(yi)采用圖(tu)1所示的(de)電(dian)可編(bian)程熔(rong) 絲單(dan)(dan)元(yuan)陣列10。存儲單(dan)(dan)元(yuan)30也可以(yi)包括：讀(du)操(cao)(cao)(cao)作(zuo)單(dan)(dan)元(yuan)。該(gai)讀(du)操(cao)(cao)(cao)作(zuo)單(dan)(dan)元(yuan)的(de)輸出端可以(yi)連接對應的(de)讀(du)操(cao)(cao)(cao)作(zuo)位(wei)線，當需要讀(du)取哪(na)個電(dian)可編(bian)程熔(rong)絲單(dan)(dan)元(yuan)時，則向對應的(de)讀(du)操(cao)(cao)(cao)作(zuo)位(wei)線輸出讀(du)操(cao)(cao)(cao)作(zuo)電(dian)流，并(bing)且字線譯碼器向對應的(de)共享NMOSFET輸出高電(dian)平，以(yi)進行讀(du)操(cao)(cao)(cao)作(zuo)。

本(ben)領域技(ji)術人員應該(gai)明(ming)白(bai)，本(ben)發明(ming)的(de)(de)存(cun)儲單元還可(ke)以(yi)包括其他部件，例如(ru)PMOS驅動(dong)器、共(gong)享(xiang)NMOSFET驅動(dong)器、通(tong)過門電路(lu)(lu)(Pass Gate)以(yi)及控制電路(lu)(lu)等。為(wei)了避免遮蔽本(ben)發明(ming)的(de)(de)構(gou)思，沒有描(miao)(miao)述(shu)本(ben)領域所公知(zhi)的(de)(de)一些細(xi)節。本(ben)領域技(ji)術人員根據上(shang)面的(de)(de)描(miao)(miao)述(shu)，完全可(ke)以(yi)明(ming)白(bai)如(ru)何連接這些部件以(yi)及實施這里公開的(de)(de)技(ji)術方案。

圖(tu)4是示意性地示出根據本發(fa)明另一些實施例(li)的電(dian)可編程熔絲(si)單(dan)元(yuan)陣(zhen)列的電(dian)路連接圖(tu)。該電(dian)可編程熔絲(si)單(dan)元(yuan)陣(zhen)列40包括：n×m個電(dian)可編程熔絲(si)單(dan)元(yuan)。下面以電(dian)可編程熔絲(si)單(dan)元(yuan)411為(wei)例(li)詳細(xi)介紹本發(fa)明另一些實施例(li)的電(dian)可編程熔絲(si)單(dan)元(yuan)。

如圖(tu)4所(suo)示(shi)，電(dian)(dian)可編(bian)(bian)(bian)程(cheng)熔(rong)(rong)絲(si)(si)單元(yuan)411包括：PNP型(xing)(xing)晶體管4111和(he)電(dian)(dian)可編(bian)(bian)(bian)程(cheng)熔(rong)(rong)絲(si)(si)4110。電(dian)(dian)可編(bian)(bian)(bian)程(cheng)熔(rong)(rong)絲(si)(si)4110包括：第一(yi)(yi)端(duan)41101和(he)第二(er)(er)端(duan)41102。PNP型(xing)(xing)晶體管4111包括：N型(xing)(xing)區(qu)域(yu)41113，以及分別鄰接(jie)在(zai)N型(xing)(xing)區(qu)域(yu)41113兩邊(bian)的第一(yi)(yi)P型(xing)(xing)區(qu)域(yu)41111和(he)第二(er)(er)P型(xing)(xing)區(qu)域(yu)41112(第一(yi)(yi)P型(xing)(xing)區(qu)域(yu)與第二(er)(er)P型(xing)(xing)區(qu)域(yu)不(bu)鄰接(jie))。N型(xing)(xing)區(qu)域(yu)41113連(lian)接(jie)電(dian)(dian)可編(bian)(bian)(bian)程(cheng)熔(rong)(rong)絲(si)(si)4110的第一(yi)(yi)端(duan)41101。第一(yi)(yi)P型(xing)(xing)區(qu)域(yu)41111連(lian)接(jie)寫操作位線BL1。第二(er)(er)P型(xing)(xing)區(qu)域(yu)41112連(lian)接(jie)讀操作位線BL_RD11。其中，電(dian)(dian)可編(bian)(bian)(bian)程(cheng)熔(rong)(rong)絲(si)(si)4110的第二(er)(er)端(duan)41102連(lian)接(jie)至共享(xiang)(xiang)NMOSFET 4114的漏極，該共享(xiang)(xiang)NMOSFET 4114的柵(zha)極連(lian)接(jie)字線WL1，該共享(xiang)(xiang)NMOSFET 4114的源極接(jie)地。圖(tu)4中的其他電(dian)(dian)可編(bian)(bian)(bian)程(cheng)熔(rong)(rong)絲(si)(si)單元(yuan)與電(dian)(dian)可編(bian)(bian)(bian)程(cheng)熔(rong)(rong)絲(si)(si)單元(yuan)411類(lei)似，這里(li)不(bu)再一(yi)(yi)一(yi)(yi)贅(zhui)述。

在該(gai)實施(shi)例中(zhong)，將前面實施(shi)例中(zhong)的第一(yi)(yi)(yi)二極(ji)(ji)(ji)管(guan)和第二二極(ji)(ji)(ji)管(guan)合并(bing)為一(yi)(yi)(yi)個PNP型(xing)晶體管(guan)(可以(yi)看作第一(yi)(yi)(yi)二極(ji)(ji)(ji)管(guan)和第二二極(ji)(ji)(ji)管(guan)使(shi)用一(yi)(yi)(yi)個共同的N型(xing)區域)，可以(yi)使(shi)得器(qi)件(jian)的結構進一(yi)(yi)(yi)步(bu)簡化，面積也可以(yi)進一(yi)(yi)(yi)步(bu)減小(xiao)，并(bing)且可以(yi)獲(huo)得與使(shi)用第一(yi)(yi)(yi)二極(ji)(ji)(ji)管(guan)和第二二極(ji)(ji)(ji)管(guan)類似的效(xiao)果。

本領域(yu)(yu)技術人員應該明了(le)，由(you)于(yu)(yu)這(zhe)里(li)(li)第(di)(di)一P型區(qu)域(yu)(yu)與(yu)N型區(qu)域(yu)(yu)形成的PN結(jie)對(dui)(dui)應于(yu)(yu)前面(mian)所(suo)述的第(di)(di)一二極(ji)管，第(di)(di)二P型區(qu)域(yu)(yu)與(yu)N型區(qu)域(yu)(yu)形成的PN結(jie)對(dui)(dui)應于(yu)(yu)前面(mian)所(suo)述的第(di)(di)二二極(ji)管，因(yin)此前面(mian)關于(yu)(yu)使用第(di)(di)一二極(ji)管和第(di)(di)二二極(ji)管的電可編(bian)程(cheng)熔(rong)絲單(dan)元所(suo)分別進行的寫操(cao)作、讀操(cao)作以及所(suo)獲得的效果同樣適用于(yu)(yu)這(zhe)里(li)(li)使用PNP型晶體管的電可編(bian)程(cheng)熔(rong)絲單(dan)元，這(zhe)里(li)(li)不再一一贅述。

圖(tu)5是示意性地示出(chu)根據本發(fa)明另一些實施(shi)例的電可(ke)編程(cheng)(cheng)熔絲(si)(si)單元陣列(lie)(lie)的電路連接圖(tu)。電可(ke)編程(cheng)(cheng)熔絲(si)(si)單元陣列(lie)(lie)50包括：n×m個電可(ke)編程(cheng)(cheng)熔絲(si)(si)單元。

如圖5所示，以(yi)電(dian)(dian)(dian)(dian)可編(bian)程(cheng)熔絲(si)單(dan)元(yuan)(yuan)511為(wei)例，電(dian)(dian)(dian)(dian)可編(bian)程(cheng)熔絲(si)單(dan)元(yuan)(yuan)511可以(yi)包(bao)(bao)括:PNP型晶體管(guan)4111和電(dian)(dian)(dian)(dian)可編(bian)程(cheng)熔絲(si)4110。電(dian)(dian)(dian)(dian)可編(bian)程(cheng)熔絲(si)單(dan)元(yuan)(yuan)511還可以(yi)包(bao)(bao)括：讀(du)(du)(du)操(cao)作MOSFET 5115，設(she)置在PNP型晶體管(guan)4111的(de)第二P型區(qu)域(yu)41112與(yu)讀(du)(du)(du)操(cao)作位線(xian)(xian)BL_RD11之間(jian)；其中，讀(du)(du)(du)操(cao)作MOSFET 5115的(de)柵極連接(jie)讀(du)(du)(du)操(cao)作控制線(xian)(xian)RD11。圖5中的(de)其他電(dian)(dian)(dian)(dian)可編(bian)程(cheng)熔絲(si)單(dan)元(yuan)(yuan)與(yu)電(dian)(dian)(dian)(dian)可編(bian)程(cheng)熔絲(si)單(dan)元(yuan)(yuan)511類似，也(ye)設(she)置了(le)讀(du)(du)(du)操(cao)作MOSFET，這(zhe)里(li)不再一(yi)一(yi)贅述(shu)。

在一些實施例(li)中，讀(du)操(cao)(cao)(cao)作(zuo)(zuo)MOSFET為(wei)讀(du)操(cao)(cao)(cao)作(zuo)(zuo)NMOSFET(例(li)如如圖5所示(shi))。其(qi)中，讀(du)操(cao)(cao)(cao)作(zuo)(zuo)NMOSFET的(de)源極連(lian)(lian)接(jie)第二P型區(qu)域(yu)(例(li)如第二P型區(qu)域(yu)41112)，該讀(du)操(cao)(cao)(cao)作(zuo)(zuo)NMOSFET的(de)漏極連(lian)(lian)接(jie)讀(du)操(cao)(cao)(cao)作(zuo)(zuo)位線(xian)(例(li)如讀(du)操(cao)(cao)(cao)作(zuo)(zuo)位線(xian)BL_RD11)。

在另一些實施例中(zhong)，讀(du)操(cao)作(zuo)MOSFET為讀(du)操(cao)作(zuo)PMOSFET。其中(zhong)，讀(du)操(cao)作(zuo)PMOSFET的(de)漏極連接(jie)第(di)二P型區(qu)域(yu)(例如(ru)(ru)第(di)二P型區(qu)域(yu)41112)，該(gai)讀(du)操(cao)作(zuo)PMOSFET的(de)源(yuan)極連接(jie)讀(du)操(cao)作(zuo)位(wei)線(xian)(例如(ru)(ru)讀(du)操(cao)作(zuo)位(wei)線(xian)BL_RD11)。

在本發明的上(shang)述實施例(li)中，雖然(ran)在每(mei)個電(dian)可(ke)編(bian)程(cheng)熔(rong)絲單元中設置了讀(du)操作MOSFET，但是由于每(mei)一行電(dian)可(ke)編(bian)程(cheng)熔(rong)絲單元使用(yong)一個共享的NMOSFET，使得(de)對于整個陣列來說，總體的面積依然(ran)要(yao)小于現(xian)有(you)技術中的陣列面積。增加(jia)的讀(du)操作MOSFET可(ke)以用(yong)來選擇(ze)需要(yao)讀(du)取的電(dian)可(ke)編(bian)程(cheng)熔(rong)絲單元。

關于利(li)用讀操(cao)作MOSFET 5115來執(zhi)行讀操(cao)作的方法與前面利(li)用讀操(cao)作MOSFET 2115的方法類似，這里不再贅述。

本發(fa)明(ming)另一些實施例的(de)電(dian)可(ke)編(bian)程(cheng)(cheng)(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)元(yuan)陣(zhen)(zhen)列(lie)(例如(ru)，如(ru)圖4所示的(de)電(dian)可(ke)編(bian)程(cheng)(cheng)(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)元(yuan)陣(zhen)(zhen)列(lie)40或者如(ru)圖5所示的(de)電(dian)可(ke)編(bian)程(cheng)(cheng)(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)元(yuan)陣(zhen)(zhen)列(lie)50)可(ke)以包(bao)括：n×m個如(ru)前所述電(dian)可(ke)編(bian)程(cheng)(cheng)(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)元(yuan)和n個共(gong)(gong)享(xiang)NMOSFET；n≥1，且為(wei)(wei)正整數；m≥1，且為(wei)(wei)正整數。其中，第(di)i行的(de)電(dian)可(ke)編(bian)程(cheng)(cheng)(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)元(yuan)的(de)電(dian)可(ke)編(bian)程(cheng)(cheng)(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)的(de)第(di)二端連(lian)接至第(di)i個共(gong)(gong)享(xiang)NMOSFET的(de)漏極。該(gai)第(di)i個共(gong)(gong)享(xiang)NMOSFET的(de)柵極連(lian)接第(di)i條字線WLi，以及(ji)該(gai)第(di)i個共(gong)(gong)享(xiang)NMOSFET的(de)源(yuan)極接地；1≤i≤n，且i為(wei)(wei)正整數。第(di)j列(lie)的(de)電(dian)可(ke)編(bian)程(cheng)(cheng)(cheng)(cheng)熔(rong)(rong)絲(si)(si)(si)單(dan)元(yuan)的(de)第(di)一P型(xing)區域連(lian)接第(di)j條寫(xie)操(cao)作位線BLj；1≤j≤m，且j為(wei)(wei)正整數。

如(ru)圖4或圖5所示，每(mei)一(yi)(yi)(yi)(yi)行(xing)的電(dian)可編(bian)程熔絲單元(yuan)經一(yi)(yi)(yi)(yi)個共享NMOSFET連(lian)接(jie)(jie)同一(yi)(yi)(yi)(yi)條(tiao)(tiao)字(zi)線(xian)，每(mei)一(yi)(yi)(yi)(yi)列(lie)的電(dian)可編(bian)程熔絲單元(yuan)連(lian)接(jie)(jie)同一(yi)(yi)(yi)(yi)條(tiao)(tiao)寫(xie)操作位(wei)線(xian)。通過(guo)使(shi)得某(mou)一(yi)(yi)(yi)(yi)條(tiao)(tiao)字(zi)線(xian)和某(mou)一(yi)(yi)(yi)(yi)條(tiao)(tiao)寫(xie)操作位(wei)線(xian)均連(lian)接(jie)(jie)高電(dian)平，以對(dui)連(lian)接(jie)(jie)該條(tiao)(tiao)字(zi)線(xian)和該條(tiao)(tiao)寫(xie)操作位(wei)線(xian)的電(dian)可編(bian)程熔絲單元(yuan)進行(xing)寫(xie)操作。

在前面描述的存儲單(dan)元30的實(shi)施例中，對于n×m個(ge)電可(ke)編(bian)程熔絲(si)單(dan)元，每(mei)個(ge)電可(ke)編(bian)程熔絲(si)單(dan)元包含：電可(ke)編(bian)程熔絲(si)、第一二極(ji)管(guan)和第二二極(ji)管(guan)。

在(zai)另一(yi)(yi)些實(shi)施例(li)中，對(dui)于n×m個(ge)(ge)(ge)電(dian)(dian)可(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)絲單元(yuan)(yuan)(yuan)，每(mei)個(ge)(ge)(ge)電(dian)(dian)可(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)絲單元(yuan)(yuan)(yuan)包含(han)：PNP型(xing)(xing)晶體管和電(dian)(dian)可(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)絲，可(ke)(ke)以得到另一(yi)(yi)些實(shi)施例(li)的(de)存(cun)儲(chu)單元(yuan)(yuan)(yuan)30。如圖3所示，存(cun)儲(chu)單元(yuan)(yuan)(yuan)30包括(kuo)(kuo)：電(dian)(dian)可(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)絲單元(yuan)(yuan)(yuan)陣(zhen)列(包括(kuo)(kuo)n×m個(ge)(ge)(ge)電(dian)(dian)可(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)絲單元(yuan)(yuan)(yuan)組成的(de)陣(zhen)列301和n個(ge)(ge)(ge)共(gong)享NMOSFET，例(li)如共(gong)享NMOSFET 3051至(zhi)305n等)、字(zi)(zi)線(xian)譯(yi)碼器(qi)302、寫(xie)(xie)操(cao)作(zuo)位(wei)(wei)線(xian)譯(yi)碼器(qi)303以及(ji)m個(ge)(ge)(ge)位(wei)(wei)線(xian)PMOSFET(例(li)如位(wei)(wei)線(xian)PMOSFET 3041至(zhi)304m等)。其(qi)中，字(zi)(zi)線(xian)譯(yi)碼器(qi)302的(de)第(di)(di)(di)i個(ge)(ge)(ge)輸出(chu)端通過(guo)字(zi)(zi)線(xian)WLi連接第(di)(di)(di)i個(ge)(ge)(ge)共(gong)享NMOSFET的(de)柵(zha)極(1≤i≤n，且i為正(zheng)整數)。第(di)(di)(di)j個(ge)(ge)(ge)位(wei)(wei)線(xian)PMOSFET 304j的(de)漏極通過(guo)第(di)(di)(di)j條寫(xie)(xie)操(cao)作(zuo)位(wei)(wei)線(xian)BLj連接第(di)(di)(di)j列的(de)電(dian)(dian)可(ke)(ke)編(bian)程(cheng)(cheng)熔(rong)絲單元(yuan)(yuan)(yuan)的(de)第(di)(di)(di)一(yi)(yi)P 型(xing)(xing)區(qu)域(圖3中未示出(chu)，1≤j≤m，且j為正(zheng)整數)。該第(di)(di)(di)j個(ge)(ge)(ge)位(wei)(wei)線(xian)PMOSFET 304j的(de)源極連接寫(xie)(xie)操(cao)作(zuo)電(dian)(dian)源VDD。該第(di)(di)(di)j個(ge)(ge)(ge)位(wei)(wei)線(xian)PMOSFET 304j的(de)柵(zha)極連接至(zhi)寫(xie)(xie)操(cao)作(zuo)位(wei)(wei)線(xian)譯(yi)碼器(qi)303的(de)第(di)(di)(di)j個(ge)(ge)(ge)輸出(chu)端。

在進行寫(xie)操(cao)作(zuo)(zuo)(zuo)(zuo)時，例如(ru)對連接(jie)第(di)i條字線(xian)(xian)WLi和(he)第(di)j條寫(xie)操(cao)作(zuo)(zuo)(zuo)(zuo)位(wei)線(xian)(xian)BLj的(de)電(dian)可編(bian)程(cheng)熔(rong)絲單(dan)元執行寫(xie)操(cao)作(zuo)(zuo)(zuo)(zuo)，寫(xie)操(cao)作(zuo)(zuo)(zuo)(zuo)位(wei)線(xian)(xian)譯碼(ma)器303的(de)第(di)j個(ge)(ge)輸(shu)出端(duan)輸(shu)出低電(dian)平(ping)(ping)至第(di)j個(ge)(ge)位(wei)線(xian)(xian)PMOSFET 304j的(de)柵極(ji)，使(shi)得(de)該(gai)第(di)j個(ge)(ge)位(wei)線(xian)(xian)PMOSFET 304j的(de)源(yuan)極(ji)和(he)漏極(ji)導(dao)通(tong)；并且字線(xian)(xian)譯碼(ma)器302的(de)第(di)i個(ge)(ge)輸(shu)出端(duan)輸(shu)出高電(dian)平(ping)(ping)至第(di)i個(ge)(ge)共(gong)享NMOSFET的(de)柵極(ji)，使(shi)得(de)該(gai)第(di)i個(ge)(ge)共(gong)享NMOSFET的(de)源(yuan)極(ji)和(he)漏極(ji)導(dao)通(tong)，從而實現對所期(qi)望的(de)電(dian)可編(bian)程(cheng)熔(rong)絲單(dan)元的(de)寫(xie)操(cao)作(zuo)(zuo)(zuo)(zuo)。

在(zai)一(yi)些實施例(li)中，在(zai)圖(tu)3中可(ke)以采用圖(tu)5所示(shi)的(de)(de)電(dian)可(ke)編(bian)程(cheng)熔絲單元(yuan)陣列50。即(ji)在(zai)各個電(dian)可(ke)編(bian)程(cheng)熔絲單元(yuan)的(de)(de)第二P型(xing)區域(yu)與相(xiang)應的(de)(de)讀(du)操(cao)(cao)作(zuo)(zuo)位線(xian)之(zhi)間設置讀(du)操(cao)(cao)作(zuo)(zuo)MOSFET(圖(tu)3中未示(shi)出)，該讀(du)操(cao)(cao)作(zuo)(zuo)MOSFET的(de)(de)柵極連接(jie)讀(du)操(cao)(cao)作(zuo)(zuo)控制(zhi)線(xian)(例(li)如讀(du)操(cao)(cao)作(zuo)(zuo)控制(zhi)線(xian)RD11至RDnm等)；讀(du)操(cao)(cao)作(zuo)(zuo)位線(xian)連接(jie)讀(du)操(cao)(cao)作(zuo)(zuo)電(dian)源(圖(tu)3中未示(shi)出)，用來為讀(du)操(cao)(cao)作(zuo)(zuo)位線(xian)提供(gong)高電(dian)平(ping)。

如(ru)圖3所示，存儲(chu)單(dan)元30還可以包括：讀(du)(du)(du)(du)操(cao)(cao)作(zuo)單(dan)元306，其輸出端(duan)連接對(dui)應(ying)的讀(du)(du)(du)(du)操(cao)(cao)作(zuo)控(kong)(kong)制(zhi)(zhi)線(例如(ru)每個輸出端(duan)分(fen)別連接讀(du)(du)(du)(du)操(cao)(cao)作(zuo)控(kong)(kong)制(zhi)(zhi)線RD11至RDnm中的每一個)，通(tong)過對(dui)應(ying)的讀(du)(du)(du)(du)操(cao)(cao)作(zuo)控(kong)(kong)制(zhi)(zhi)線輸出選通(tong)信號至對(dui)應(ying)的讀(du)(du)(du)(du)操(cao)(cao)作(zuo)MOSFET的柵極，以選通(tong)該(gai)(gai)讀(du)(du)(du)(du)操(cao)(cao)作(zuo)MOSFET，并且字線譯(yi)碼(ma)器(qi)向所期望的共享NMOSFET輸出高電平，從而可以使得讀(du)(du)(du)(du)操(cao)(cao)作(zuo)電流經過該(gai)(gai)被選通(tong)的讀(du)(du)(du)(du)操(cao)(cao)作(zuo)MOSFET并且流經對(dui)應(ying)的電可編(bian)程(cheng)熔絲，以進行讀(du)(du)(du)(du)操(cao)(cao)作(zuo)。

在(zai)另一(yi)些實施例中(zhong)，在(zai)圖3中(zhong)也(ye)可(ke)(ke)以采用圖4所示的(de)(de)電(dian)(dian)可(ke)(ke)編程熔絲單(dan)元(yuan)(yuan)陣列40。存儲單(dan)元(yuan)(yuan)30也(ye)可(ke)(ke)以包括(kuo)：讀(du)操作(zuo)(zuo)單(dan)元(yuan)(yuan)。該讀(du)操作(zuo)(zuo)單(dan)元(yuan)(yuan)的(de)(de)輸出端(duan)可(ke)(ke)以連接對應(ying)(ying)的(de)(de)讀(du)操作(zuo)(zuo)位(wei)線，當需(xu)要(yao)讀(du)取哪個(ge)電(dian)(dian)可(ke)(ke)編程熔絲單(dan)元(yuan)(yuan)時(shi)，則向(xiang)對應(ying)(ying)的(de)(de)讀(du)操作(zuo)(zuo)位(wei)線輸出讀(du)操作(zuo)(zuo)電(dian)(dian)流，并且字線譯(yi)碼器向(xiang)對應(ying)(ying)的(de)(de)共享NMOSFET輸出高電(dian)(dian)平，以進行(xing)讀(du)操作(zuo)(zuo)。

本領域技術人員應該(gai)明白，本發明的(de)存儲單元還可以包括其他部(bu)件(jian)，例如(ru)PMOS驅(qu)動(dong)(dong)器(qi)、共享NMOSFET驅(qu)動(dong)(dong)器(qi)、通過門電路(Pass Gate)以及控制(zhi)電路等。

至(zhi)此(ci)，已經(jing)詳細描述了本發明。為(wei)了避免(mian)遮蔽本發明的構(gou)思，沒(mei)有描述本領(ling)域(yu)所公知(zhi)的一(yi)些細節(jie)。本領(ling)域(yu)技(ji)術(shu)人(ren)員根據上面的描述，完全可(ke)以明白如何(he)實施這里(li)公開的技(ji)術(shu)方案(an)。

雖然已經通過示(shi)(shi)例(li)對(dui)本發(fa)明(ming)(ming)(ming)(ming)的(de)一些特(te)定實(shi)施例(li)進(jin)(jin)行(xing)了(le)詳(xiang)細說明(ming)(ming)(ming)(ming)，但是本領域的(de)技術人員(yuan)應該理解，以(yi)上(shang)示(shi)(shi)例(li)僅(jin)是為了(le)進(jin)(jin)行(xing)說明(ming)(ming)(ming)(ming)，而不是為了(le)限制本發(fa)明(ming)(ming)(ming)(ming)的(de)范(fan)圍。本領域的(de)技術人員(yuan)應該理解，可在不脫離本發(fa)明(ming)(ming)(ming)(ming)的(de)范(fan)圍和精神的(de)情況(kuang)下，對(dui)以(yi)上(shang)實(shi)施例(li)進(jin)(jin)行(xing)修改。本發(fa)明(ming)(ming)(ming)(ming)的(de)范(fan)圍由所附權(quan)利要求來限定。