本發明涉及(ji)穩壓器技(ji)術領域,尤其涉及(ji)一種數字低壓差穩壓器及(ji)其控制方法。
背景技術:
目前(qian),ldo(lowdropoutregulator,低壓差(cha)穩壓器(qi)(qi))作為(wei)電(dian)(dian)源管理(li)電(dian)(dian)路已被廣泛應(ying)用(yong)在(zai)便攜式(shi)電(dian)(dian)子設備(bei)、無(wu)線(xian)(xian)能(neng)量(liang)傳輸系(xi)統等領(ling)域。傳統的ldo為(wei)線(xian)(xian)性電(dian)(dian)路,相比于開關穩壓器(qi)(qi)電(dian)(dian)路,其(qi)(qi)具(ju)有輸出紋波小(xiao)、電(dian)(dian)路結構簡單、占用(yong)芯(xin)片面積小(xiao)且(qie)可(ke)(ke)以實現全集成等優(you)點。但由于其(qi)(qi)具(ju)有模擬電(dian)(dian)路特(te)性,導致其(qi)(qi)工藝可(ke)(ke)遷(qian)移性較差(cha),且(qie)難以在(zai)低電(dian)(dian)壓下(xia)工作。因此,數字(zi)ldo結構應(ying)運而生,數字(zi)ldo具(ju)備(bei)數字(zi)電(dian)(dian)路特(te)性,具(ju)有良好(hao)的工藝可(ke)(ke)遷(qian)移性,并且(qie)能(neng)夠(gou)工作在(zai)較低的電(dian)(dian)源電(dian)(dian)壓下(xia)。
傳(chuan)統的(de)(de)無(wu)片外(wai)電(dian)(dian)(dian)容(rong)的(de)(de)數字ldo包括一個(ge)電(dian)(dian)(dian)壓(ya)(ya)(ya)比(bi)較器(qi)(qi)、一個(ge)計數器(qi)(qi)、一個(ge)pmosfet(metal-oxide-semiconductorfield-effecttransistor,金屬-氧化層(ceng)半(ban)導體(ti)場(chang)效晶體(ti)管)陣列(lie)和一個(ge)反(fan)饋電(dian)(dian)(dian)阻網絡。當輸(shu)(shu)出(chu)反(fan)饋電(dian)(dian)(dian)壓(ya)(ya)(ya)小(xiao)于基準電(dian)(dian)(dian)壓(ya)(ya)(ya)時比(bi)較器(qi)(qi)輸(shu)(shu)出(chu)低電(dian)(dian)(dian)平,反(fan)之輸(shu)(shu)出(chu)高電(dian)(dian)(dian)平,計數器(qi)(qi)根據比(bi)較器(qi)(qi)的(de)(de)輸(shu)(shu)出(chu)值(zhi)來控(kong)制pmosfet陣列(lie)中晶體(ti)管導通數目,進而(er)調整輸(shu)(shu)出(chu)電(dian)(dian)(dian)壓(ya)(ya)(ya),最終達到穩(wen)(wen)定輸(shu)(shu)出(chu)電(dian)(dian)(dian)壓(ya)(ya)(ya)的(de)(de)目的(de)(de)。現有技術中,由于數字ldo中pmos晶體(ti)管在每個(ge)時鐘周(zhou)期只有一個(ge)發生跳變,所以數字ldo的(de)(de)響應速度較慢。因此,如何(he)使數字低壓(ya)(ya)(ya)差穩(wen)(wen)壓(ya)(ya)(ya)器(qi)(qi)盡(jin)快達到穩(wen)(wen)壓(ya)(ya)(ya)值(zhi)以實現輸(shu)(shu)出(chu)穩(wen)(wen)壓(ya)(ya)(ya)成為待解決的(de)(de)問題(ti)。
技術實現要素:
本發明的(de)實(shi)施例提供一種數字低壓(ya)差(cha)穩(wen)壓(ya)器及其控制方(fang)法,用(yong)于使數字低壓(ya)差(cha)穩(wen)壓(ya)器盡快達(da)到穩(wen)壓(ya)值(zhi)以(yi)實(shi)現輸出穩(wen)壓(ya)。
為達到上述目的,本發明的實施例采用如(ru)下技術方案(an):
第一(yi)方面,提供(gong)一(yi)種數字低(di)壓(ya)差穩壓(ya)器,包括:電壓(ya)比較器、計數器、解碼器、pmosfet陣列以及除法器;
電壓比(bi)較(jiao)器(qi)的(de)(de)輸(shu)(shu)(shu)(shu)(shu)出(chu)(chu)端(duan)(duan)(duan)連(lian)(lian)接(jie)(jie)(jie)計(ji)數(shu)器(qi)的(de)(de)第(di)一(yi)輸(shu)(shu)(shu)(shu)(shu)入(ru)端(duan)(duan)(duan),計(ji)數(shu)器(qi)的(de)(de)輸(shu)(shu)(shu)(shu)(shu)出(chu)(chu)端(duan)(duan)(duan)連(lian)(lian)接(jie)(jie)(jie)解(jie)碼器(qi)的(de)(de)輸(shu)(shu)(shu)(shu)(shu)入(ru)端(duan)(duan)(duan),解(jie)碼器(qi)的(de)(de)輸(shu)(shu)(shu)(shu)(shu)出(chu)(chu)端(duan)(duan)(duan)連(lian)(lian)接(jie)(jie)(jie)pmosfet陣(zhen)列的(de)(de)輸(shu)(shu)(shu)(shu)(shu)入(ru)端(duan)(duan)(duan),pmosfet陣(zhen)列的(de)(de)輸(shu)(shu)(shu)(shu)(shu)出(chu)(chu)端(duan)(duan)(duan)分(fen)別(bie)連(lian)(lian)接(jie)(jie)(jie)電壓比(bi)較(jiao)器(qi)的(de)(de)正向輸(shu)(shu)(shu)(shu)(shu)入(ru)端(duan)(duan)(duan)以及除法(fa)器(qi)的(de)(de)第(di)一(yi)輸(shu)(shu)(shu)(shu)(shu)入(ru)端(duan)(duan)(duan),除法(fa)器(qi)的(de)(de)輸(shu)(shu)(shu)(shu)(shu)出(chu)(chu)端(duan)(duan)(duan)連(lian)(lian)接(jie)(jie)(jie)計(ji)數(shu)器(qi)的(de)(de)第(di)二輸(shu)(shu)(shu)(shu)(shu)入(ru)端(duan)(duan)(duan),電壓比(bi)較(jiao)器(qi)的(de)(de)負(fu)向輸(shu)(shu)(shu)(shu)(shu)入(ru)端(duan)(duan)(duan)接(jie)(jie)(jie)收參考電壓;
電(dian)(dian)壓比較器用(yong)于(yu)通(tong)過正向(xiang)(xiang)輸入端接收(shou)pmosfet陣(zhen)列輸出的實際電(dian)(dian)壓,通(tong)過負向(xiang)(xiang)輸入端接收(shou)參考(kao)電(dian)(dian)壓,比較實際電(dian)(dian)壓和(he)參考(kao)電(dian)(dian)壓獲取電(dian)(dian)平信(xin)號,并(bing)將電(dian)(dian)平信(xin)號發送至(zhi)計數器;
除法器用于根據(ju)為pmosfet陣(zhen)(zhen)列預配置的(de)輸(shu)出(chu)電(dian)壓以及至(zhi)少兩個時鐘周期(qi)內pmosfet陣(zhen)(zhen)列輸(shu)出(chu)的(de)實際電(dian)壓進行(xing)計算,得出(chu)第一數(shu)(shu)值(zhi)并將(jiang)第一數(shu)(shu)值(zhi)發送至(zhi)計數(shu)(shu)器,其中(zhong)第一數(shu)(shu)值(zhi)對應解碼器對pmosfet陣(zhen)(zhen)列中(zhong)pmosfet控(kong)制的(de)數(shu)(shu)量;
計(ji)數器用(yong)于根(gen)據電(dian)平信(xin)號(hao)(hao)以及(ji)第一數值(zhi)生成控(kong)(kong)制信(xin)號(hao)(hao),并將控(kong)(kong)制信(xin)號(hao)(hao)發送至解碼器;
解碼器(qi)用(yong)于(yu)接(jie)收計數器(qi)發送的控制(zhi)信號并根據控制(zhi)信號控制(zhi)pmosfet陣列中晶體管(guan)的導通數目。
具體的,除法器具體用于根據公式
可選的(de),除法器還用于將n的(de)值通過四舍五入取得整數(shu)c,通過進(jin)(jin)制(zhi)轉換將c的(de)值轉換為第一數(shu)值并發送至計數(shu)器,其中(zhong)進(jin)(jin)制(zhi)轉換為將十進(jin)(jin)制(zhi)數(shu)轉換為二進(jin)(jin)制(zhi)數(shu)。
可選(xuan)的(de),計數器的(de)第三(san)輸入端(duan)連(lian)接第一時鐘信號(hao)端(duan),除法器的(de)第二輸入端(duan)連(lian)接第二時鐘信號(hao)端(duan);
計數器還(huan)用于根據第一時鐘信號端(duan)獲(huo)取時鐘周期;
除法器還用于存儲pmosfet陣列預(yu)配置(zhi)的輸出電壓,除法器還用于根據第(di)二時(shi)鐘信(xin)號(hao)端的時(shi)鐘信(xin)號(hao)獲取時(shi)鐘周期。
可選的,該數(shu)字低壓(ya)差穩壓(ya)器(qi)還包括:反(fan)饋電(dian)阻(zu)(zu)網絡,反(fan)饋電(dian)阻(zu)(zu)網絡的第一端(duan)連接(jie)pmosfet陣列的輸出端(duan),反(fan)饋電(dian)阻(zu)(zu)網絡的第二端(duan)接(jie)地;
反饋(kui)電阻(zu)網絡(luo)用于對pmosfet陣列的輸出端輸出的電流進行分流。
第二方面(mian),提供一種數字(zi)低(di)(di)壓(ya)差(cha)(cha)穩(wen)壓(ya)器的控(kong)制(zhi)方法(fa),用于(yu)控(kong)制(zhi)第一方面(mian)實施例所(suo)述的數字(zi)低(di)(di)壓(ya)差(cha)(cha)穩(wen)壓(ya)器,該(gai)方法(fa)包括:
接(jie)收參考電(dian)(dian)壓以(yi)及pmosfet陣列輸出的目(mu)標電(dian)(dian)壓,比較目(mu)標電(dian)(dian)壓和參考電(dian)(dian)壓獲取電(dian)(dian)平信(xin)號;
根據為pmosfet陣列預配置(zhi)的(de)輸出電壓以及至少兩個(ge)時鐘(zhong)周(zhou)期內pmosfet陣列輸出的(de)實際電壓進(jin)行計算,得(de)出第(di)一數值(zhi)并將第(di)一數值(zhi),第(di)一數值(zhi)對應pmosfet陣列中pmosfet控制的(de)數量;
根據電平信號(hao)以(yi)及第一(yi)數值生成控制(zhi)信號(hao);
根據控制信(xin)號控制pmosfet陣列中(zhong)晶體管的導通數(shu)目。
具體(ti)的(de),根(gen)據為pmosfet陣列預(yu)配置的(de)輸(shu)出(chu)電壓以(yi)及至(zhi)少兩個(ge)時鐘周期(qi)內pmosfet陣列輸(shu)出(chu)的(de)實(shi)際(ji)電壓進(jin)行計算,包括(kuo):
根據公式
可選的(de),得出第一數值(zhi)包(bao)括:
將n的值通(tong)過四舍五入(ru)取得整數(shu)(shu)c,通(tong)過進制轉(zhuan)(zhuan)(zhuan)換(huan)將c的值轉(zhuan)(zhuan)(zhuan)換(huan)為第一數(shu)(shu)值,其中進制轉(zhuan)(zhuan)(zhuan)換(huan)為將十進制數(shu)(shu)轉(zhuan)(zhuan)(zhuan)換(huan)為二進制數(shu)(shu)。
可選的,該方法還包(bao)括:獲取時鐘周(zhou)期,存儲pmosfet陣列預配置的輸出電(dian)壓。
可選的(de),該方法還(huan)包括:對pmosfet陣列輸出的(de)電流(liu)進行分流(liu)。
本發(fa)明(ming)實(shi)(shi)施例提供的(de)(de)(de)數(shu)(shu)(shu)字(zi)低壓(ya)(ya)(ya)(ya)(ya)差(cha)穩(wen)壓(ya)(ya)(ya)(ya)(ya)器(qi)(qi),包括:電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)比較器(qi)(qi)、計(ji)(ji)(ji)數(shu)(shu)(shu)器(qi)(qi)、解碼(ma)器(qi)(qi)、pmosfet陣(zhen)(zhen)(zhen)列(lie)以(yi)及除(chu)法(fa)器(qi)(qi);電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)比較器(qi)(qi)通(tong)(tong)過正向輸(shu)(shu)入端接收pmosfet陣(zhen)(zhen)(zhen)列(lie)輸(shu)(shu)出(chu)(chu)(chu)的(de)(de)(de)實(shi)(shi)際(ji)(ji)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya),通(tong)(tong)過負向輸(shu)(shu)入端接收參考(kao)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya),比較實(shi)(shi)際(ji)(ji)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)和參考(kao)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)獲取電(dian)(dian)(dian)平(ping)信(xin)(xin)號(hao)(hao),并(bing)將電(dian)(dian)(dian)平(ping)信(xin)(xin)號(hao)(hao)發(fa)送(song)至(zhi)計(ji)(ji)(ji)數(shu)(shu)(shu)器(qi)(qi);除(chu)法(fa)器(qi)(qi)根據為pmosfet陣(zhen)(zhen)(zhen)列(lie)預配置(zhi)的(de)(de)(de)輸(shu)(shu)出(chu)(chu)(chu)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)以(yi)及至(zhi)少兩個時鐘周期內pmosfet陣(zhen)(zhen)(zhen)列(lie)輸(shu)(shu)出(chu)(chu)(chu)的(de)(de)(de)實(shi)(shi)際(ji)(ji)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)進(jin)行(xing)計(ji)(ji)(ji)算,得(de)出(chu)(chu)(chu)第(di)(di)一(yi)(yi)數(shu)(shu)(shu)值并(bing)將第(di)(di)一(yi)(yi)數(shu)(shu)(shu)值發(fa)送(song)至(zhi)計(ji)(ji)(ji)數(shu)(shu)(shu)器(qi)(qi),其中第(di)(di)一(yi)(yi)數(shu)(shu)(shu)值對(dui)應解碼(ma)器(qi)(qi)對(dui)pmosfet陣(zhen)(zhen)(zhen)列(lie)中pmosfet控(kong)(kong)制(zhi)的(de)(de)(de)數(shu)(shu)(shu)量;計(ji)(ji)(ji)數(shu)(shu)(shu)器(qi)(qi)根據電(dian)(dian)(dian)平(ping)信(xin)(xin)號(hao)(hao)以(yi)及第(di)(di)一(yi)(yi)數(shu)(shu)(shu)值生(sheng)成(cheng)控(kong)(kong)制(zhi)信(xin)(xin)號(hao)(hao),并(bing)將控(kong)(kong)制(zhi)信(xin)(xin)號(hao)(hao)發(fa)送(song)至(zhi)解碼(ma)器(qi)(qi);解碼(ma)器(qi)(qi)接收計(ji)(ji)(ji)數(shu)(shu)(shu)器(qi)(qi)發(fa)送(song)的(de)(de)(de)控(kong)(kong)制(zhi)信(xin)(xin)號(hao)(hao)并(bing)根據控(kong)(kong)制(zhi)信(xin)(xin)號(hao)(hao)控(kong)(kong)制(zhi)pmosfet陣(zhen)(zhen)(zhen)列(lie)中晶體管的(de)(de)(de)導通(tong)(tong)數(shu)(shu)(shu)目,可以(yi)使數(shu)(shu)(shu)字(zi)低壓(ya)(ya)(ya)(ya)(ya)差(cha)穩(wen)壓(ya)(ya)(ya)(ya)(ya)器(qi)(qi)盡快達到穩(wen)壓(ya)(ya)(ya)(ya)(ya)值以(yi)實(shi)(shi)現輸(shu)(shu)出(chu)(chu)(chu)穩(wen)壓(ya)(ya)(ya)(ya)(ya)。
附圖說明
為了(le)更清楚地說明(ming)(ming)本發明(ming)(ming)實施(shi)例或現(xian)(xian)有技(ji)(ji)術中(zhong)的(de)技(ji)(ji)術方案,下(xia)面將對實施(shi)例或現(xian)(xian)有技(ji)(ji)術描(miao)述中(zhong)所需要使用的(de)附(fu)圖(tu)作簡單地介紹(shao),顯而(er)易(yi)見地,下(xia)面描(miao)述中(zhong)的(de)附(fu)圖(tu)僅(jin)僅(jin)是本發明(ming)(ming)的(de)一(yi)些(xie)實施(shi)例,對于本領域普通技(ji)(ji)術人員來講,在不付出創造性勞動的(de)前提下(xia),還(huan)可以根據(ju)這些(xie)附(fu)圖(tu)獲得其(qi)他的(de)附(fu)圖(tu)。
圖1為本(ben)發明的(de)實(shi)施例提供的(de)數字低壓(ya)差穩壓(ya)器示意圖之(zhi)一;
圖2為本發(fa)明的(de)實施例提供的(de)數字(zi)低(di)壓差穩壓器中的(de)pmosfet陣(zhen)列圖;
圖3為本發明的實施例提(ti)供(gong)的數字(zi)低壓(ya)差穩(wen)壓(ya)器示意圖之二(er);
圖4為本發明的(de)(de)實施例提供的(de)(de)數字低壓差穩壓器的(de)(de)控制方(fang)法流程圖;
圖5為(wei)本發明的(de)(de)實施例提供的(de)(de)數(shu)字低壓差(cha)穩壓器的(de)(de)工作流程示意圖。
具體實施方式
下(xia)面將結合本(ben)(ben)發明實(shi)施(shi)(shi)例(li)(li)(li)中(zhong)(zhong)的(de)(de)附圖(tu),對本(ben)(ben)發明實(shi)施(shi)(shi)例(li)(li)(li)中(zhong)(zhong)的(de)(de)技術(shu)方(fang)案(an)進行清(qing)楚、完(wan)整地描述,顯然,所描述的(de)(de)實(shi)施(shi)(shi)例(li)(li)(li)僅僅是本(ben)(ben)發明一部分(fen)實(shi)施(shi)(shi)例(li)(li)(li),而不是全部的(de)(de)實(shi)施(shi)(shi)例(li)(li)(li)。基于本(ben)(ben)發明中(zhong)(zhong)的(de)(de)實(shi)施(shi)(shi)例(li)(li)(li),本(ben)(ben)領域普通技術(shu)人員在沒有做出創(chuang)造性勞動前提下(xia)所獲得的(de)(de)所有其(qi)他實(shi)施(shi)(shi)例(li)(li)(li),都屬于本(ben)(ben)發明保(bao)護的(de)(de)范圍。
本申請中(zhong)的(de)“a和/或b”表示三種選擇(ze):a,或者,b,或者,a和b。也即(ji)“和/或”即(ji)可(ke)以表示“和“的(de)關系(xi),也可(ke)以表示“或”的(de)關系(xi)。
還需要說明的(de)是(shi),本(ben)(ben)申請中的(de)“第(di)一”、“第(di)二”等字樣僅僅是(shi)為了對功能和作用基本(ben)(ben)相(xiang)同(tong)的(de)相(xiang)同(tong)項(xiang)或相(xiang)似項(xiang)進(jin)行(xing)區分,“第(di)一”、“第(di)二”等字樣并不是(shi)在對數量和執(zhi)行(xing)次序進(jin)行(xing)限定。
本發明的實施例提供(gong)一種數字(zi)低壓(ya)差穩壓(ya)器,參(can)照(zhao)圖(tu)1所示,包括(kuo)電壓(ya)比較器10、計(ji)數器11、解碼器12、pmosfet陣列13以及除法(fa)器14。
其中,電(dian)(dian)壓比較器(qi)(qi)(qi)10的輸(shu)(shu)出(chu)(chu)端(duan)(duan)(duan)連(lian)接(jie)計數(shu)器(qi)(qi)(qi)11的第一(yi)輸(shu)(shu)入(ru)(ru)端(duan)(duan)(duan),計數(shu)器(qi)(qi)(qi)11的輸(shu)(shu)出(chu)(chu)端(duan)(duan)(duan)連(lian)接(jie)解(jie)碼器(qi)(qi)(qi)12的輸(shu)(shu)入(ru)(ru)端(duan)(duan)(duan),解(jie)碼器(qi)(qi)(qi)12的輸(shu)(shu)出(chu)(chu)端(duan)(duan)(duan)連(lian)接(jie)pmosfet陣列(lie)13的輸(shu)(shu)入(ru)(ru)端(duan)(duan)(duan),pmosfet陣列(lie)13的輸(shu)(shu)出(chu)(chu)端(duan)(duan)(duan)分別連(lian)接(jie)電(dian)(dian)壓比較器(qi)(qi)(qi)10的正向(xiang)輸(shu)(shu)入(ru)(ru)端(duan)(duan)(duan)以及除(chu)法器(qi)(qi)(qi)14的第一(yi)輸(shu)(shu)入(ru)(ru)端(duan)(duan)(duan),除(chu)法器(qi)(qi)(qi)14的輸(shu)(shu)出(chu)(chu)端(duan)(duan)(duan)連(lian)接(jie)計數(shu)器(qi)(qi)(qi)11的第二輸(shu)(shu)入(ru)(ru)端(duan)(duan)(duan),電(dian)(dian)壓比較器(qi)(qi)(qi)10的負向(xiang)輸(shu)(shu)入(ru)(ru)端(duan)(duan)(duan)接(jie)收參考電(dian)(dian)壓(英文:voltagereference,簡稱(cheng):vref)。
電壓(ya)比較器10用于對正輸(shu)入(ru)(ru)端(duan)的(de)輸(shu)入(ru)(ru)電壓(ya)與負輸(shu)入(ru)(ru)端(duan)的(de)輸(shu)入(ru)(ru)電壓(ya)進行比較并輸(shu)出電平(ping)信號。
電(dian)壓(ya)比較器10用(yong)于通(tong)(tong)過(guo)正向輸入(ru)端接收pmosfet陣列13輸出(chu)的實際電(dian)壓(ya),通(tong)(tong)過(guo)負向輸入(ru)端接收參考電(dian)壓(ya),比較實際電(dian)壓(ya)和參考電(dian)壓(ya)獲取電(dian)平(ping)信號(hao),并將電(dian)平(ping)信號(hao)發送至(zhi)計數器11。
示例性(xing)的(de)(de),電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)比(bi)(bi)較器(qi)(qi)10的(de)(de)負向輸(shu)入端(duan)(duan)的(de)(de)接收(shou)的(de)(de)參(can)(can)考(kao)(kao)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)是指測量(liang)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)值時,用(yong)作(zuo)參(can)(can)考(kao)(kao)點(dian)的(de)(de)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)值,在低壓(ya)(ya)(ya)(ya)(ya)(ya)差穩壓(ya)(ya)(ya)(ya)(ya)(ya)器(qi)(qi)進行工作(zuo)下,電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)比(bi)(bi)較器(qi)(qi)10的(de)(de)正向輸(shu)入端(duan)(duan)的(de)(de)輸(shu)入電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)為pmosfet陣列13的(de)(de)輸(shu)出(chu)端(duan)(duan)的(de)(de)輸(shu)出(chu)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya),電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)比(bi)(bi)較器(qi)(qi)10對正輸(shu)入端(duan)(duan)的(de)(de)輸(shu)入電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)與參(can)(can)考(kao)(kao)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)進行比(bi)(bi)較,當電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)比(bi)(bi)較器(qi)(qi)10正輸(shu)入端(duan)(duan)的(de)(de)輸(shu)入電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)大于(yu)參(can)(can)考(kao)(kao)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya),電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)比(bi)(bi)較器(qi)(qi)10輸(shu)出(chu)高電(dian)(dian)(dian)平信號,當電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)比(bi)(bi)較器(qi)(qi)10正輸(shu)入端(duan)(duan)的(de)(de)輸(shu)入電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)小于(yu)參(can)(can)考(kao)(kao)電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya),電(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)比(bi)(bi)較器(qi)(qi)10輸(shu)出(chu)低電(dian)(dian)(dian)平信號。
除(chu)法器14用(yong)于(yu)根據為pmosfet陣列(lie)預配置的輸出電壓(ya)以及(ji)至(zhi)少兩個時鐘周期內pmosfet陣列(lie)輸出的實際電壓(ya)進行(xing)計算,得出第一數值(zhi)并將第一數值(zhi)發(fa)送至(zhi)計數器11,其中第一數值(zhi)對應解碼器12對pmosfet陣列(lie)13中pmosfet控制的數量(liang)。
具體的,除法器14獲取相鄰兩個周期內pmosfet陣列13輸出的實際電壓的變化值vx,需要說明的是,也可以將時鐘周期范圍擴大,設置為三個周期或者更多的時鐘周期來測pmosfet陣列13輸出的實際電壓的變化值的平均值vx,即vx為至少兩個周期內,每相鄰兩個周期之間pmosfet陣列輸出的實際電壓的變化值的平均值,本發明的實施例以相鄰兩個時鐘周期為例進行說明,除法器14存儲的pmosfet陣列13預配置的輸出電壓為vo,除法器14根據設置的公式
計數器11用于(yu)根據(ju)電平信號以及(ji)第一數值生(sheng)成控制(zhi)信號,并將(jiang)控制(zhi)信號發送至(zhi)解碼器12;
具(ju)體的(de)(de),計(ji)數器(qi)(qi)(qi)(qi)11通過接收電(dian)壓比較器(qi)(qi)(qi)(qi)10發(fa)(fa)(fa)(fa)(fa)送的(de)(de)高(gao)電(dian)平信號或低電(dian)平信號以及(ji)除法器(qi)(qi)(qi)(qi)14發(fa)(fa)(fa)(fa)(fa)送的(de)(de)第一數值生(sheng)成(cheng)控(kong)制(zhi)(zhi)信號,并將(jiang)控(kong)制(zhi)(zhi)信號發(fa)(fa)(fa)(fa)(fa)送至解(jie)碼器(qi)(qi)(qi)(qi)12。示例性(xing)的(de)(de),計(ji)數器(qi)(qi)(qi)(qi)是由基本的(de)(de)計(ji)數單元和(he)一些控(kong)制(zhi)(zhi)門(men)所組(zu)成(cheng),計(ji)數單元則由一系列(lie)具(ju)有(you)存(cun)儲(chu)信息功能的(de)(de)各類(lei)觸發(fa)(fa)(fa)(fa)(fa)器(qi)(qi)(qi)(qi)構(gou)成(cheng),這些觸發(fa)(fa)(fa)(fa)(fa)器(qi)(qi)(qi)(qi)有(you)rs觸發(fa)(fa)(fa)(fa)(fa)器(qi)(qi)(qi)(qi)、t觸發(fa)(fa)(fa)(fa)(fa)器(qi)(qi)(qi)(qi)、d觸發(fa)(fa)(fa)(fa)(fa)器(qi)(qi)(qi)(qi)及(ji)jk觸發(fa)(fa)(fa)(fa)(fa)器(qi)(qi)(qi)(qi)等(deng)。其不(bu)僅能記錄輸入時(shi)鐘(zhong)脈沖的(de)(de)個(ge)數,還(huan)可以實現分(fen)(fen)頻(pin)、定時(shi)、產生(sheng)節拍(pai)脈沖和(he)脈沖序列(lie)等(deng)。例如,計(ji)算機中(zhong)的(de)(de)時(shi)序發(fa)(fa)(fa)(fa)(fa)生(sheng)器(qi)(qi)(qi)(qi)、分(fen)(fen)頻(pin)器(qi)(qi)(qi)(qi)、指令計(ji)數器(qi)(qi)(qi)(qi)等(deng)都(dou)要使用計(ji)數器(qi)(qi)(qi)(qi)。計(ji)數器(qi)(qi)(qi)(qi)的(de)(de)種類(lei)很多。按(an)時(shi)鐘(zhong)脈沖輸入方式(shi)的(de)(de)不(bu)同(tong)(tong),可分(fen)(fen)為(wei)同(tong)(tong)步計(ji)數器(qi)(qi)(qi)(qi)和(he)異(yi)步計(ji)數器(qi)(qi)(qi)(qi);按(an)進位體制(zhi)(zhi)的(de)(de)不(bu)同(tong)(tong),可分(fen)(fen)為(wei)二(er)進制(zhi)(zhi)計(ji)數器(qi)(qi)(qi)(qi)和(he)非二(er)進制(zhi)(zhi)計(ji)數器(qi)(qi)(qi)(qi);按(an)計(ji)數過程中(zhong)數字增減(jian)趨勢的(de)(de)不(bu)同(tong)(tong),可分(fen)(fen)為(wei)加計(ji)數器(qi)(qi)(qi)(qi)、減(jian)計(ji)數器(qi)(qi)(qi)(qi)和(he)可逆計(ji)數器(qi)(qi)(qi)(qi)。
可(ke)選的,計(ji)數(shu)器11的第(di)(di)(di)(di)三輸(shu)入(ru)端連接(jie)第(di)(di)(di)(di)一(yi)時(shi)(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信(xin)(xin)號(hao)(hao)端clk1,計(ji)數(shu)器11根(gen)據第(di)(di)(di)(di)一(yi)時(shi)(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信(xin)(xin)號(hao)(hao)端clk1獲取時(shi)(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)周(zhou)期(qi),除法器14的第(di)(di)(di)(di)二輸(shu)入(ru)端連接(jie)第(di)(di)(di)(di)二時(shi)(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信(xin)(xin)號(hao)(hao)端,根(gen)據第(di)(di)(di)(di)二時(shi)(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信(xin)(xin)號(hao)(hao)端clk2的時(shi)(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信(xin)(xin)號(hao)(hao)獲取時(shi)(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)周(zhou)期(qi)。需要說明的是(shi),第(di)(di)(di)(di)一(yi)時(shi)(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信(xin)(xin)號(hao)(hao)端clk1與(yu)第(di)(di)(di)(di)二時(shi)(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信(xin)(xin)號(hao)(hao)端clk2輸(shu)出的時(shi)(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信(xin)(xin)號(hao)(hao)是(shi)同步的,因此(ci)計(ji)數(shu)器11的時(shi)(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)周(zhou)期(qi)與(yu)除法器14的時(shi)(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)周(zhou)期(qi)同步。
解碼(ma)器(qi)12用于接收計數(shu)器(qi)發送(song)的控(kong)制信號并(bing)根據(ju)控(kong)制信號控(kong)制pmosfet陣列13中晶體管的導通(tong)數(shu)目。
具體(ti)的,解碼(ma)(ma)器(qi)12將第一(yi)數(shu)值(zhi)進(jin)(jin)行解析,即通(tong)過進(jin)(jin)制(zhi)(zhi)轉換(huan)將第一(yi)數(shu)值(zhi)轉換(huan)為(wei)(wei)(wei)十(shi)進(jin)(jin)制(zhi)(zhi)數(shu),該(gai)十(shi)進(jin)(jin)制(zhi)(zhi)數(shu)為(wei)(wei)(wei)正整(zheng)數(shu),并通(tong)過計數(shu)器(qi)11發送的高(gao)(gao)電(dian)(dian)平(ping)信號或低電(dian)(dian)平(ping)信號以及該(gai)十(shi)進(jin)(jin)制(zhi)(zhi)數(shu)判斷有幾個高(gao)(gao)電(dian)(dian)平(ping)信號或低電(dian)(dian)平(ping)信號,因(yin)為(wei)(wei)(wei)pmosfet陣(zhen)列13中(zhong)為(wei)(wei)(wei)pmos晶體(ti)管(guan)(guan)(guan),pmos晶體(ti)管(guan)(guan)(guan)為(wei)(wei)(wei)高(gao)(gao)電(dian)(dian)平(ping)截止,低電(dian)(dian)平(ping)導通(tong),因(yin)此當該(gai)十(shi)進(jin)(jin)制(zhi)(zhi)數(shu)為(wei)(wei)(wei)20時(shi)且電(dian)(dian)平(ping)信號為(wei)(wei)(wei)低電(dian)(dian)平(ping),解碼(ma)(ma)器(qi)12控制(zhi)(zhi)pmosfet陣(zhen)列13中(zhong)晶體(ti)管(guan)(guan)(guan)的導通(tong)數(shu)目為(wei)(wei)(wei)20。
示例(li)性的(de),參照(zhao)圖2所(suo)示為本發明(ming)的(de)實施例(li)提供的(de)數字低壓差穩壓器中的(de)pmosfet陣(zhen)列圖,所(suo)述pmosfet陣(zhen)列由(you)多(duo)個(ge)pmos晶體管組成(cheng),連接所(suo)述pmosfet陣(zhen)列13輸入端的(de)解碼器12用于向所(suo)述pmosfet陣(zhen)列輸入m個(ge)高(gao)電(dian)平或低電(dian)平信號,當(dang)(dang)輸入m個(ge)高(gao)電(dian)平信號時,則(ze)有m個(ge)pmos晶體管關斷,當(dang)(dang)輸入m個(ge)低電(dian)平信號時,則(ze)有m個(ge)pmos晶體管導通。
示例性的,對本發明實施例提供的數字低壓差穩壓器快速達到穩壓值的過程作舉例說明,在第一個時鐘周期pmosfet陣列的輸出端輸出的電壓為v1,v1=0.2v,第二個時鐘周期pmosfet陣列的輸出端輸出的電壓為v2,v2=0.25v,vx=v2-v1=0.05v,設除法器存儲pmosfet陣列13預配置的輸出電壓v0為1.5v,根據公式
示例性的,在第一個時鐘周期pmosfet陣列的輸出端輸出的電壓為v1,v1=0.2,第二個時鐘周期pmosfet陣列的輸出端輸出的電壓為v2,v2=0.25v,第三個時鐘周期pmosfet陣列的輸出端輸出的電壓為v3,v3=0.32v,
本發明實(shi)施例(li)提供的數(shu)(shu)字(zi)(zi)低壓(ya)(ya)差(cha)穩壓(ya)(ya)器(qi)(qi),包括:電(dian)(dian)(dian)壓(ya)(ya)比(bi)(bi)較(jiao)器(qi)(qi)、計數(shu)(shu)器(qi)(qi)、解碼器(qi)(qi)、pmosfet陣列(lie)以及(ji)除(chu)法(fa)器(qi)(qi);電(dian)(dian)(dian)壓(ya)(ya)比(bi)(bi)較(jiao)器(qi)(qi)通(tong)過正(zheng)向輸(shu)入端(duan)接收(shou)pmosfet陣列(lie)輸(shu)出的實(shi)際(ji)(ji)電(dian)(dian)(dian)壓(ya)(ya),通(tong)過負(fu)向輸(shu)入端(duan)接收(shou)參考電(dian)(dian)(dian)壓(ya)(ya),比(bi)(bi)較(jiao)實(shi)際(ji)(ji)電(dian)(dian)(dian)壓(ya)(ya)和(he)參考電(dian)(dian)(dian)壓(ya)(ya)獲取電(dian)(dian)(dian)平信(xin)號,并將(jiang)電(dian)(dian)(dian)平信(xin)號發送(song)至計數(shu)(shu)器(qi)(qi);除(chu)法(fa)器(qi)(qi)根(gen)據(ju)為pmosfet陣列(lie)預配置的輸(shu)出電(dian)(dian)(dian)壓(ya)(ya)以及(ji)至少兩個時鐘(zhong)周期內(nei)pmosfet陣列(lie)輸(shu)出的實(shi)際(ji)(ji)電(dian)(dian)(dian)壓(ya)(ya)進行計算,得出第一(yi)數(shu)(shu)值并將(jiang)第一(yi)數(shu)(shu)值發送(song)至計數(shu)(shu)器(qi)(qi),其中第一(yi)數(shu)(shu)值對(dui)應解碼器(qi)(qi)對(dui)pmosfet陣列(lie)中pmosfet控(kong)(kong)制(zhi)的數(shu)(shu)量;計數(shu)(shu)器(qi)(qi)根(gen)據(ju)電(dian)(dian)(dian)平信(xin)號以及(ji)第一(yi)數(shu)(shu)值生成控(kong)(kong)制(zhi)信(xin)號,并將(jiang)控(kong)(kong)制(zhi)信(xin)號發送(song)至解碼器(qi)(qi);解碼器(qi)(qi)接收(shou)計數(shu)(shu)器(qi)(qi)發送(song)的控(kong)(kong)制(zhi)信(xin)號并根(gen)據(ju)控(kong)(kong)制(zhi)信(xin)號控(kong)(kong)制(zhi)pmosfet陣列(lie)中晶體管的導通(tong)數(shu)(shu)目,可以使數(shu)(shu)字(zi)(zi)低壓(ya)(ya)差(cha)穩壓(ya)(ya)器(qi)(qi)盡快達(da)到穩壓(ya)(ya)值以實(shi)現輸(shu)出穩壓(ya)(ya)。
可(ke)選的(de),本發明實(shi)施例(li)提供的(de)數字低(di)壓(ya)差穩壓(ya)器中(zhong),參(can)照圖(tu)3所(suo)示,還包括(kuo):反饋(kui)電阻網(wang)絡(luo)15,反饋(kui)電阻網(wang)絡(luo)15的(de)第(di)一端(duan)連接(jie)pmosfet陣列13的(de)輸出端(duan),反饋(kui)電阻網(wang)絡(luo)15的(de)第(di)二端(duan)接(jie)地,反饋(kui)電阻網(wang)絡(luo)15用于對pmosfet陣列13的(de)輸出端(duan)輸出的(de)電流進行分(fen)流。
示例性的(de)(de)(de)(de),反(fan)(fan)饋(kui)(kui)電(dian)阻網(wang)(wang)絡15包(bao)括一個電(dian)阻r1,該(gai)電(dian)阻r1用于對(dui)pmosfet陣列(lie)13的(de)(de)(de)(de)輸(shu)出(chu)端的(de)(de)(de)(de)電(dian)流(liu)(liu)進(jin)行(xing)分流(liu)(liu)以(yi)(yi)避免數(shu)字低壓(ya)差穩壓(ya)器的(de)(de)(de)(de)電(dian)流(liu)(liu)過大而導致內(nei)部器件損壞。進(jin)一步的(de)(de)(de)(de),該(gai)反(fan)(fan)饋(kui)(kui)電(dian)阻網(wang)(wang)絡15也可以(yi)(yi)包(bao)括兩(liang)個或兩(liang)個以(yi)(yi)上的(de)(de)(de)(de)電(dian)阻以(yi)(yi)及(ji)其任意的(de)(de)(de)(de)組合(he)連接方式(shi),本(ben)發明對(dui)反(fan)(fan)饋(kui)(kui)電(dian)阻網(wang)(wang)絡15中的(de)(de)(de)(de)電(dian)阻以(yi)(yi)及(ji)其互相的(de)(de)(de)(de)連接方式(shi)不做限(xian)定,只要能實(shi)現(xian)對(dui)pmosfet陣列(lie)13的(de)(de)(de)(de)輸(shu)出(chu)端的(de)(de)(de)(de)電(dian)流(liu)(liu)進(jin)行(xing)分流(liu)(liu)的(de)(de)(de)(de)作(zuo)用即可。
本發明實施(shi)例提(ti)供一種數字(zi)低(di)壓差穩(wen)壓器的控(kong)制(zhi)方法,用于控(kong)制(zhi)上述實施(shi)例的提(ti)供的數字(zi)低(di)壓差穩(wen)壓器,參照(zhao)圖4所示,該方法包括:
s11、接收參考電壓(ya)以及pmosfet陣列輸出的目(mu)標電壓(ya),比較目(mu)標電壓(ya)和(he)參考電壓(ya)獲取(qu)電平信號。
具體的,電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)比(bi)較(jiao)器(qi)(qi)的負向輸(shu)入(ru)端(duan)的接(jie)收電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)為(wei)參(can)考(kao)(kao)(kao)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya),參(can)考(kao)(kao)(kao)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)是(shi)指測量電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)值時(shi),用作參(can)考(kao)(kao)(kao)點(dian)的電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)值,在低壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)差穩壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)器(qi)(qi)進行(xing)工作下,電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)比(bi)較(jiao)器(qi)(qi)的正(zheng)(zheng)向輸(shu)入(ru)端(duan)的輸(shu)入(ru)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)為(wei)pmosfet陣列的輸(shu)出(chu)端(duan)的輸(shu)出(chu)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya),電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)比(bi)較(jiao)器(qi)(qi)對正(zheng)(zheng)輸(shu)入(ru)端(duan)的輸(shu)入(ru)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)與參(can)考(kao)(kao)(kao)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)進行(xing)比(bi)較(jiao),當電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)比(bi)較(jiao)器(qi)(qi)正(zheng)(zheng)輸(shu)入(ru)端(duan)的輸(shu)入(ru)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)大于參(can)考(kao)(kao)(kao)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya),電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)比(bi)較(jiao)器(qi)(qi)輸(shu)出(chu)高電(dian)(dian)(dian)(dian)(dian)平信(xin)號,當電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)比(bi)較(jiao)器(qi)(qi)正(zheng)(zheng)輸(shu)入(ru)端(duan)的輸(shu)入(ru)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)小于參(can)考(kao)(kao)(kao)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya),電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)(ya)(ya)比(bi)較(jiao)器(qi)(qi)輸(shu)出(chu)低電(dian)(dian)(dian)(dian)(dian)平信(xin)號。
s12、根據為pmosfet陣(zhen)列預配置的(de)輸(shu)出電壓(ya)以(yi)及至少(shao)兩個時鐘周期內(nei)pmosfet陣(zhen)列輸(shu)出的(de)實(shi)際電壓(ya)進行計算,得出第(di)(di)一(yi)(yi)數(shu)(shu)(shu)值并將第(di)(di)一(yi)(yi)數(shu)(shu)(shu)值,第(di)(di)一(yi)(yi)數(shu)(shu)(shu)值對應pmosfet陣(zhen)列中pmosfet控制(zhi)的(de)數(shu)(shu)(shu)量(liang)。
具體的,參照圖5所示的數字低壓差穩壓器的工作流程示意圖,除法器14獲取相鄰兩個周期內pmosfet陣列13輸出的實際電壓的變化值vx,需要說明的是,也可以將時鐘周期范圍擴大,設置為三個周期或者更多的時鐘周期來測pmosfet陣列13輸出的實際電壓的變化值的平均值vx,即vx為至少兩個周期內,每相鄰兩個周期之間pmosfet陣列輸出的實際電壓的變化值的平均值,本發明的實施例以相鄰兩個時鐘周期為例進行說明,除法器14存儲的pmosfet陣列13預配置的輸出電壓為vo,除法器14根據設置的公式
示例性的,在第一個周期pmosfet陣列的輸出端輸出的電壓為v1,v1=0.2v,第二個周期pmosfet陣列的輸出端輸出的電壓為v2,v2=0.25v,vx=v2-v1=0.05v,設除法器存儲pmosfet陣列13預配置的輸出電壓v0為1.5v,根據公式
示例性的,在第一個時鐘周期pmosfet陣列的輸出端輸出的電壓為v1,v1=0.2v,第二個時鐘周期pmosfet陣列的輸出端輸出的電壓為v2,v2=0.25v,第三個時鐘周期pmosfet陣列的輸出端輸出的電壓為v3,v3=0.32v,
s13、根據(ju)電平(ping)信(xin)號以及(ji)第一(yi)數值生成控制信(xin)號。
具體(ti)的(de)(de)(de),計(ji)(ji)(ji)(ji)數(shu)器(qi)(qi)(qi)(qi)11通(tong)過接收電(dian)(dian)壓比較器(qi)(qi)(qi)(qi)10發(fa)(fa)(fa)(fa)(fa)送的(de)(de)(de)高電(dian)(dian)平(ping)信號(hao)或低(di)電(dian)(dian)平(ping)信號(hao)以(yi)及(ji)除法器(qi)(qi)(qi)(qi)14發(fa)(fa)(fa)(fa)(fa)送的(de)(de)(de)第(di)一(yi)數(shu)值生成控(kong)制(zhi)(zhi)信號(hao),并將控(kong)制(zhi)(zhi)信號(hao)發(fa)(fa)(fa)(fa)(fa)送至解碼器(qi)(qi)(qi)(qi)12。示例性的(de)(de)(de),計(ji)(ji)(ji)(ji)數(shu)器(qi)(qi)(qi)(qi)是(shi)由基本(ben)的(de)(de)(de)計(ji)(ji)(ji)(ji)數(shu)單元和(he)(he)(he)一(yi)些控(kong)制(zhi)(zhi)門所組成,計(ji)(ji)(ji)(ji)數(shu)單元則由一(yi)系(xi)列(lie)具有存儲信息功能的(de)(de)(de)各(ge)類觸(chu)發(fa)(fa)(fa)(fa)(fa)器(qi)(qi)(qi)(qi)構成,這些觸(chu)發(fa)(fa)(fa)(fa)(fa)器(qi)(qi)(qi)(qi)有rs觸(chu)發(fa)(fa)(fa)(fa)(fa)器(qi)(qi)(qi)(qi)、t觸(chu)發(fa)(fa)(fa)(fa)(fa)器(qi)(qi)(qi)(qi)、d觸(chu)發(fa)(fa)(fa)(fa)(fa)器(qi)(qi)(qi)(qi)及(ji)jk觸(chu)發(fa)(fa)(fa)(fa)(fa)器(qi)(qi)(qi)(qi)等。其不僅能記錄輸(shu)入(ru)時(shi)鐘脈(mo)沖的(de)(de)(de)個數(shu),還可(ke)(ke)(ke)以(yi)實現(xian)分(fen)(fen)頻(pin)(pin)、定時(shi)、產生節拍脈(mo)沖和(he)(he)(he)脈(mo)沖序(xu)列(lie)等。例如,計(ji)(ji)(ji)(ji)算機中(zhong)的(de)(de)(de)時(shi)序(xu)發(fa)(fa)(fa)(fa)(fa)生器(qi)(qi)(qi)(qi)、分(fen)(fen)頻(pin)(pin)器(qi)(qi)(qi)(qi)、指(zhi)令計(ji)(ji)(ji)(ji)數(shu)器(qi)(qi)(qi)(qi)等都要使(shi)用計(ji)(ji)(ji)(ji)數(shu)器(qi)(qi)(qi)(qi)。計(ji)(ji)(ji)(ji)數(shu)器(qi)(qi)(qi)(qi)的(de)(de)(de)種(zhong)類很多。按時(shi)鐘脈(mo)沖輸(shu)入(ru)方式(shi)的(de)(de)(de)不同,可(ke)(ke)(ke)分(fen)(fen)為(wei)同步計(ji)(ji)(ji)(ji)數(shu)器(qi)(qi)(qi)(qi)和(he)(he)(he)異步計(ji)(ji)(ji)(ji)數(shu)器(qi)(qi)(qi)(qi);按進位(wei)體(ti)制(zhi)(zhi)的(de)(de)(de)不同,可(ke)(ke)(ke)分(fen)(fen)為(wei)二(er)進制(zhi)(zhi)計(ji)(ji)(ji)(ji)數(shu)器(qi)(qi)(qi)(qi)和(he)(he)(he)非(fei)二(er)進制(zhi)(zhi)計(ji)(ji)(ji)(ji)數(shu)器(qi)(qi)(qi)(qi);按計(ji)(ji)(ji)(ji)數(shu)過程中(zhong)數(shu)字增減(jian)趨(qu)勢的(de)(de)(de)不同,可(ke)(ke)(ke)分(fen)(fen)為(wei)加(jia)計(ji)(ji)(ji)(ji)數(shu)器(qi)(qi)(qi)(qi)、減(jian)計(ji)(ji)(ji)(ji)數(shu)器(qi)(qi)(qi)(qi)和(he)(he)(he)可(ke)(ke)(ke)逆計(ji)(ji)(ji)(ji)數(shu)器(qi)(qi)(qi)(qi)。
可選的(de),獲取(qu)時(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)周期(qi)(qi)具體為計(ji)數器根據(ju)第(di)(di)一時(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信號端(duan)clk1獲取(qu)時(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)周期(qi)(qi),除法器14根據(ju)第(di)(di)二時(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信號端(duan)clk2的(de)時(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信號獲取(qu)時(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)周期(qi)(qi)。需(xu)要說明的(de)是,第(di)(di)一時(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信號端(duan)clk1與第(di)(di)二時(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信號端(duan)clk2輸(shu)出的(de)時(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)信號是同步(bu)的(de),因此計(ji)數器11的(de)時(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)周期(qi)(qi)與除法器14的(de)時(shi)(shi)(shi)(shi)鐘(zhong)(zhong)(zhong)周期(qi)(qi)同步(bu)。
s14、根據控(kong)制(zhi)信號控(kong)制(zhi)pmosfet陣列中(zhong)晶體管的導通數(shu)目。
具體(ti)(ti)的(de),解(jie)碼(ma)(ma)器(qi)12將第(di)一數(shu)(shu)(shu)值進行解(jie)析,即通(tong)(tong)過(guo)進制(zhi)(zhi)(zhi)轉換將第(di)一數(shu)(shu)(shu)值轉換為(wei)(wei)十(shi)(shi)進制(zhi)(zhi)(zhi)數(shu)(shu)(shu),該十(shi)(shi)進制(zhi)(zhi)(zhi)數(shu)(shu)(shu)為(wei)(wei)正整數(shu)(shu)(shu),并(bing)通(tong)(tong)過(guo)計數(shu)(shu)(shu)器(qi)11發送的(de)高電(dian)(dian)平(ping)信(xin)號或低電(dian)(dian)平(ping)信(xin)號以及該十(shi)(shi)進制(zhi)(zhi)(zhi)數(shu)(shu)(shu)判斷有幾個高電(dian)(dian)平(ping)信(xin)號或低電(dian)(dian)平(ping)信(xin)號,因為(wei)(wei)pmosfet陣(zhen)列13中(zhong)為(wei)(wei)pmos晶(jing)體(ti)(ti)管(guan)(guan),pmos晶(jing)體(ti)(ti)管(guan)(guan)為(wei)(wei)高電(dian)(dian)平(ping)截(jie)止,低電(dian)(dian)平(ping)導通(tong)(tong),因此當該十(shi)(shi)進制(zhi)(zhi)(zhi)數(shu)(shu)(shu)為(wei)(wei)20時,電(dian)(dian)平(ping)信(xin)號為(wei)(wei)低電(dian)(dian)平(ping),則解(jie)碼(ma)(ma)器(qi)12控(kong)制(zhi)(zhi)(zhi)pmosfet陣(zhen)列13中(zhong)晶(jing)體(ti)(ti)管(guan)(guan)的(de)導通(tong)(tong)數(shu)(shu)(shu)目(mu)為(wei)(wei)20。
本發明實施例(li)提供的(de)(de)(de)數字低(di)壓(ya)(ya)(ya)差穩壓(ya)(ya)(ya)器(qi)的(de)(de)(de)控(kong)(kong)制(zhi)方法,通過接收參考(kao)電(dian)壓(ya)(ya)(ya)以(yi)(yi)(yi)及pmosfet陣列(lie)輸出的(de)(de)(de)目標電(dian)壓(ya)(ya)(ya),比較目標電(dian)壓(ya)(ya)(ya)和參考(kao)電(dian)壓(ya)(ya)(ya)獲取電(dian)平(ping)信(xin)號(hao)(hao),根(gen)據為pmosfet陣列(lie)預配置(zhi)的(de)(de)(de)輸出電(dian)壓(ya)(ya)(ya)以(yi)(yi)(yi)及至少兩(liang)個(ge)時鐘周期(qi)內(nei)pmosfet陣列(lie)輸出的(de)(de)(de)實際(ji)電(dian)壓(ya)(ya)(ya)進行計算,得出第一(yi)數值(zhi)(zhi)(zhi)并將第一(yi)數值(zhi)(zhi)(zhi),第一(yi)數值(zhi)(zhi)(zhi)對應pmosfet陣列(lie)中pmosfet控(kong)(kong)制(zhi)的(de)(de)(de)數量,根(gen)據電(dian)平(ping)信(xin)號(hao)(hao)以(yi)(yi)(yi)及第一(yi)數值(zhi)(zhi)(zhi)生(sheng)成控(kong)(kong)制(zhi)信(xin)號(hao)(hao),根(gen)據控(kong)(kong)制(zhi)信(xin)號(hao)(hao)控(kong)(kong)制(zhi)pmosfet陣列(lie)中晶(jing)體管的(de)(de)(de)導通數目,可以(yi)(yi)(yi)使數字低(di)壓(ya)(ya)(ya)差穩壓(ya)(ya)(ya)器(qi)盡快達到(dao)穩壓(ya)(ya)(ya)值(zhi)(zhi)(zhi)以(yi)(yi)(yi)實現輸出穩壓(ya)(ya)(ya)。
可選(xuan)的,本發明實施例提供(gong)的數字低壓差(cha)穩壓器的控制方(fang)法還包(bao)括(kuo):對pmosfet陣列的輸出電流進行分流。
示(shi)例性的(de)(de)(de),反饋電(dian)(dian)阻(zu)網(wang)絡15包(bao)括一個(ge)電(dian)(dian)阻(zu)r1,該電(dian)(dian)阻(zu)r1對pmosfet陣(zhen)(zhen)列(lie)13的(de)(de)(de)輸(shu)出端的(de)(de)(de)電(dian)(dian)流(liu)進行(xing)(xing)分(fen)流(liu)以避免數(shu)字低壓差穩壓器的(de)(de)(de)電(dian)(dian)流(liu)過(guo)大而導致內部(bu)器件損(sun)壞(huai)。進一步的(de)(de)(de),該反饋電(dian)(dian)阻(zu)網(wang)絡15也(ye)可以包(bao)括兩(liang)個(ge)或(huo)兩(liang)個(ge)以上的(de)(de)(de)電(dian)(dian)阻(zu)以及其任意的(de)(de)(de)組合連接方式(shi),本發明對反饋電(dian)(dian)阻(zu)網(wang)絡15中的(de)(de)(de)電(dian)(dian)阻(zu)以及其互相的(de)(de)(de)連接方式(shi)不做(zuo)限定,只要能實現對pmosfet陣(zhen)(zhen)列(lie)13的(de)(de)(de)輸(shu)出端的(de)(de)(de)電(dian)(dian)流(liu)進行(xing)(xing)分(fen)流(liu)的(de)(de)(de)作用即可。
以(yi)上所述(shu),僅為本(ben)(ben)發(fa)明(ming)(ming)的(de)具體實施(shi)方式,但本(ben)(ben)發(fa)明(ming)(ming)的(de)保(bao)護范(fan)圍(wei)(wei)并(bing)不(bu)局限于(yu)此,任何熟悉(xi)本(ben)(ben)技(ji)(ji)術領(ling)域的(de)技(ji)(ji)術人(ren)員在本(ben)(ben)發(fa)明(ming)(ming)揭(jie)露的(de)技(ji)(ji)術范(fan)圍(wei)(wei)內,可輕易想到的(de)變(bian)化或替換,都應涵蓋(gai)在本(ben)(ben)發(fa)明(ming)(ming)的(de)保(bao)護范(fan)圍(wei)(wei)之(zhi)內。因此,本(ben)(ben)發(fa)明(ming)(ming)的(de)保(bao)護范(fan)圍(wei)(wei)應以(yi)所述(shu)權利要(yao)求的(de)保(bao)護范(fan)圍(wei)(wei)為準。