本技術涉及(ji)一種mems的(de)結構，尤其(qi)是一種mems器件的(de)加固質量(liang)塊結構。

背景技術：

1、微(wei)(wei)(wei)(wei)(wei)機(ji)(ji)(ji)(ji)(ji)電(dian)(dian)(dian)(dian)(dian)系(xi)(xi)統(tong)(tong)(tong)(mems,micro-electro-mechanical?system)，也(ye)叫做微(wei)(wei)(wei)(wei)(wei)電(dian)(dian)(dian)(dian)(dian)子機(ji)(ji)(ji)(ji)(ji)械(xie)(xie)系(xi)(xi)統(tong)(tong)(tong)、微(wei)(wei)(wei)(wei)(wei)系(xi)(xi)統(tong)(tong)(tong)、微(wei)(wei)(wei)(wei)(wei)機(ji)(ji)(ji)(ji)(ji)械(xie)(xie)等(deng)(deng)，指尺(chi)寸在(zai)幾(ji)毫米乃至(zhi)更小(xiao)的(de)(de)(de)高科技裝(zhuang)置。微(wei)(wei)(wei)(wei)(wei)機(ji)(ji)(ji)(ji)(ji)電(dian)(dian)(dian)(dian)(dian)系(xi)(xi)統(tong)(tong)(tong)其內部結構一般在(zai)微(wei)(wei)(wei)(wei)(wei)米甚(shen)至(zhi)納米量級，是一個獨(du)立的(de)(de)(de)智能系(xi)(xi)統(tong)(tong)(tong)。微(wei)(wei)(wei)(wei)(wei)機(ji)(ji)(ji)(ji)(ji)電(dian)(dian)(dian)(dian)(dian)系(xi)(xi)統(tong)(tong)(tong)是在(zai)微(wei)(wei)(wei)(wei)(wei)電(dian)(dian)(dian)(dian)(dian)子技術(半導體(ti)制造(zao)技術)基礎上發展起來(lai)的(de)(de)(de)，融合了光刻、腐(fu)蝕、薄膜、liga、硅(gui)微(wei)(wei)(wei)(wei)(wei)加工(gong)、非硅(gui)微(wei)(wei)(wei)(wei)(wei)加工(gong)和(he)精(jing)密機(ji)(ji)(ji)(ji)(ji)械(xie)(xie)加工(gong)等(deng)(deng)技術制作的(de)(de)(de)高科技電(dian)(dian)(dian)(dian)(dian)子機(ji)(ji)(ji)(ji)(ji)械(xie)(xie)器(qi)(qi)(qi)(qi)件。微(wei)(wei)(wei)(wei)(wei)機(ji)(ji)(ji)(ji)(ji)電(dian)(dian)(dian)(dian)(dian)系(xi)(xi)統(tong)(tong)(tong)是集微(wei)(wei)(wei)(wei)(wei)傳(chuan)感(gan)器(qi)(qi)(qi)(qi)、微(wei)(wei)(wei)(wei)(wei)執行器(qi)(qi)(qi)(qi)、微(wei)(wei)(wei)(wei)(wei)機(ji)(ji)(ji)(ji)(ji)械(xie)(xie)結構、微(wei)(wei)(wei)(wei)(wei)電(dian)(dian)(dian)(dian)(dian)源(yuan)微(wei)(wei)(wei)(wei)(wei)能源(yuan)、信(xin)號處理和(he)控制電(dian)(dian)(dian)(dian)(dian)路、高性能電(dian)(dian)(dian)(dian)(dian)子集成器(qi)(qi)(qi)(qi)件、接口、通信(xin)等(deng)(deng)于一體(ti)的(de)(de)(de)微(wei)(wei)(wei)(wei)(wei)型(xing)器(qi)(qi)(qi)(qi)件或(huo)系(xi)(xi)統(tong)(tong)(tong)。mems側重于超(chao)精(jing)密機(ji)(ji)(ji)(ji)(ji)械(xie)(xie)加工(gong)，涉(she)及(ji)微(wei)(wei)(wei)(wei)(wei)電(dian)(dian)(dian)(dian)(dian)子、材料、力(li)學、化學、機(ji)(ji)(ji)(ji)(ji)械(xie)(xie)學諸多學科領域。它的(de)(de)(de)學科面(mian)涵蓋(gai)微(wei)(wei)(wei)(wei)(wei)尺(chi)度(du)下的(de)(de)(de)力(li)、電(dian)(dian)(dian)(dian)(dian)、光、磁、聲、表面(mian)等(deng)(deng)物理、化學、機(ji)(ji)(ji)(ji)(ji)械(xie)(xie)學的(de)(de)(de)各分(fen)支。常見(jian)的(de)(de)(de)產品(pin)包括mems加速(su)度(du)計、mems麥克風、微(wei)(wei)(wei)(wei)(wei)馬達、微(wei)(wei)(wei)(wei)(wei)泵、微(wei)(wei)(wei)(wei)(wei)振子、mems光學傳(chuan)感(gan)器(qi)(qi)(qi)(qi)、mems壓力(li)傳(chuan)感(gan)器(qi)(qi)(qi)(qi)、mems陀螺儀、mems濕度(du)傳(chuan)感(gan)器(qi)(qi)(qi)(qi)、mems氣體(ti)傳(chuan)感(gan)器(qi)(qi)(qi)(qi)等(deng)(deng)等(deng)(deng)以(yi)及(ji)它們的(de)(de)(de)集成產品(pin)。

2、現有的mems的結構沒有高度(du)差，限制(zhi)了加速(su)度(du)計、陀螺儀、微鏡等傳感(gan)器的性能。

技術實現思路

1、為解決上述不能形成高度差、限制了(le)mems的性能問題(ti)，本實用新型提供(gong)一種mems器(qi)件的加(jia)固質量塊結(jie)構，具體技術方案為：

2、一種mems器件的加固質量塊結(jie)構(gou)(gou)，包括：soi基片(pian)，設(she)有(you)背(bei)腔；以及加固結(jie)構(gou)(gou)，設(she)于所述背(bei)腔內(nei)，且與正面的振動結(jie)構(gou)(gou)連接(jie)。

3、優選的，所述soi基片(pian)包括依次設置的頂硅、埋氧層氧化硅和襯底硅。

4、與現有(you)技術相比本實用新型具有(you)以下(xia)有(you)益效果：

5、本實用新型提供(gong)的一種(zhong)mems器件的加(jia)固質量塊結構能夠在soi基片上形成(cheng)高度差，能夠有(you)效提升加(jia)速度計、陀螺儀、微鏡(jing)等傳(chuan)感(gan)器的靈(ling)敏(min)度。

技術特征：

1.一(yi)種mems器件的加固質量塊結構，其(qi)特(te)征(zheng)在(zai)于，包括：

2.根據權利(li)要求(qiu)1所述的一種mems器(qi)件(jian)的加固質量(liang)塊(kuai)結構，其特征在于(yu)，

技術總結
本技術涉及一種MEMS的結構，尤其是一種MEMS器件的加固質量塊結構，包括：SOI基片，設有背腔；以及加固結構，設于所述背腔內，且與正面的振動結構連接。本技術提供的一種MEMS器件的加固質量塊結構能夠在SOI基片上形成高度差，能夠有效提升加速度計、陀螺儀、微鏡等傳感器的靈敏度。

技術研發人員：陳亮,陳巧
受保護的技術使用者：蘇州知芯傳感技術有限公司
技術研發日：20231212
技術公布日：2024/9/9